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公开(公告)号：KR1020140021628A
公开(公告)日：2014-02-20
申请号：KR1020137028611
申请日：2012-03-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/532
CPC classification number: H01L21/76846 , C23C14/046 , H01L21/2855 , H01L21/76849 , H01L21/76867 , H01L21/76873 , H01L21/76877 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: 본 발명은 Cu 배선의 형성 방법은, 트렌치를 가지는 웨이퍼의 전체면(全面)에 배리어막을 형성하는 공정과, 배리어막 상에 Ru막을 형성하는 공정과, Ru막 상에 PVD에 의해 순Cu막을 형성해서 트렌치를 매립하는 공정과, 순Cu막 상에 PVD에 의해 Cu 합금막을 형성하는 공정과, CMP에 의해 전체면을 연마해서 Cu 배선을 형성하는 공정과, Cu 배선상에 유전체로 이루어지는 캡층을 형성하는 공정과, Cu 배선과 캡층의 계면에 대응하는 부분을 포함하는 영역에, Cu 합금막에 포함되는 합금성분을 편석시키는 공정을 가진다.
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公开(公告)号：KR1020080102184A
公开(公告)日：2008-11-24
申请号：KR1020087022157
申请日：2007-01-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/448 , C23C16/455
CPC classification number: C23C16/4481
Abstract: A high conductance, multi-tray film precursor evaporation system (1) coupled with a high conductance vapor delivery system (40) is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system (50) includes one or more trays (340). Each tray is configured to support and retain film precursor (350) in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel (318) within the stackable trays and through an outlet (322) in the solid precursor evaporation system.
Abstract translation: 描述了与高电导蒸气输送系统（40）耦合的高电导多托盘膜前体蒸发系统（1），以通过增加膜前体的暴露表面积来提高沉积速率。 多托盘膜前体蒸发系统（50）包括一个或多个托盘（340）。 每个托盘构造成支撑并保持例如固体粉末形式或固体片剂形式的膜前体（350）。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载气在膜前体向内流动，并且垂直向上流过可堆叠托盘内的流动通道（318）并通过固体前驱物蒸发系统中的出口（322）。
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公开(公告)号：KR1020080044901A
公开(公告)日：2008-05-21
申请号：KR1020087008285
申请日：2006-07-28
Applicant: 도쿄엘렉트론가부시키가이샤
Abstract: A method and precursor for forming and integrating a Ta-containing layer in semiconductor processing. The tantalum precursor has the formula (CpR1)(CpR2)TaH(CO), where Cp is a cyclopentadienyl functional group and R1 and R2 are H or alkyl groups. The method includes providing a substrate in a process chamber of a deposition system, and exposing a process gas comprising the tantalum precursor to the substrate to form the Ta-containing layer. The Ta-containing layer may be treated to remove contaminants and modify the layer. The Ta-containing layer may contain tantalum metal, tantalum carbide, tantalum nitride, or tantalum carbonitride, or a combination thereof, and may be deposited in a TCVD, ALD, or PEALD process. A semiconductor device containing a Ta-containing layer formed on a patterned substrate containing one or more vias or trenches is provided.
Abstract translation: 用于在半导体加工中形成和集成含Ta层的方法和前体。 钽前体具有式（CpR1）（CpR2）TaH（CO），其中Cp是环戊二烯基官能团，R1和R2是H或烷基。 该方法包括在沉积系统的处理室中提供衬底，并且将包含钽前体的处理气体暴露于衬底以形成含钽层。 含钽层可被处理以去除污染物并改变层。 含Ta层可以含有钽金属，碳化钽，氮化钽或碳氮化钽或其组合，并且可以以TCVD，ALD或PEALD工艺沉积。 提供了包含形成在包含一个或多个通孔或沟槽的图案化衬底上的含Ta层的半导体器件。
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公开(公告)号：KR1020080000593A
公开(公告)日：2008-01-02
申请号：KR1020077023871
申请日：2006-03-15
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/50 , C23C16/455 , C23C16/00 , H01L21/20
CPC classification number: H01L21/28562 , C23C16/4554 , C23C16/45544 , C23C16/5096 , H01J2237/022 , H01L21/76843 , H01L21/76862
Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process. A first process material is introduced within the process chamber, and a second process material is introduced within the process chamber. Electromagnetic power of more than 600W is coupled to the process chamber during introduction of the second process material in order to generate a plasma that accelerates a reduction reaction between the first and second process materials at a surface of the substrate. The film is formed on the substrate by alternatingly introducing the first process material and the second process material.
Abstract translation: 使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底设置在配置为便于PEALD工艺的处理室中。 在处理室内引入第一处理材料，并且在处理室内引入第二处理材料。 超过600W的电磁功率在引入第二工艺材料期间耦合到处理室，以便产生加速基材表面处的第一和第二工艺材料之间的还原反应的等离子体。 通过交替地引入第一处理材料和第二处理材料，在基板上形成膜。
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公开(公告)号：KR1020050108395A
公开(公告)日：2005-11-16
申请号：KR1020057017183
申请日：2004-03-15
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/02
CPC classification number: C23C16/45542 , C23C16/34 , C23C16/452 , C23C16/45561 , Y10T137/86558 , Y10T137/86566 , Y10T137/86638 , Y10T137/86726 , Y10T137/86743 , Y10T137/86751 , Y10T137/86871
Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
Abstract translation: 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。
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Patent Agency Ranking
公开(公告)号：KR1020040020820A
公开(公告)日：2004-03-09
申请号：KR1020030060523
申请日：2003-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/28562 , C23C16/34 , C23C16/45557
Abstract: PURPOSE: To provide a treatment apparatus and treatment method capable of shortening the time for switching gaseous raw materials by shortening the time required for evacuation of the gaseous raw materials and of maintaining the temperature on a substrate surface under treatment constant. CONSTITUTION: The treating gases containing gaseous raw materials(TiCl4 and NH3) and inert gas(N2) are supplied into a treating vessel 2. The pressure in the treating vessel 2 is detected by a pressure gage 6 and the flow rate of the treating gases supplied into the treating vessel 2 is controlled in accordance with the result of the detection. Purging of the gaseous raw materials is performed by the inert gas. The flow rate as the entire part of the gaseous raw materials is controlled and the pressure in the treating vessel 2 is maintained constant by maintaining the flow rate of the treating gaseous raw material constant and by controlling the flow rate of the inert gas.
Abstract translation: 目的：提供一种处理装置和处理方法，其能够缩短气态原料的切换时间，缩短气体原料抽真空所需的时间，并将处理温度保持在处理常数上。 构成：将含有气态原料（TiCl 4和NH 3）和惰性气体（N 2）的处理气体供给到处理容器2.处理容器2中的压力由压力计6检测，处理气体的流量 根据检测结果来控制供应到处理容器2中。 气态原料的清除是通过惰性气体进行的。 通过保持处理气态原料的流量恒定并控制惰性气体的流量，控制作为气态原料的整个部分的流量，并且处理容器2中的压力保持恒定。
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公开(公告)号：KR101739613B1
公开(公告)日：2017-05-24
申请号：KR1020130154357
申请日：2013-12-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/768 , H01L21/285 , H01L21/02 , H01L21/3105
CPC classification number: H05K3/107 , C23C14/358 , H01L21/02063 , H01L21/2855 , H01L21/28556 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76846 , H01L21/76855 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H05K1/0306 , H05K2201/0338 , H01L2924/00
Abstract: 본발명은충분한매립성을확보하면서, Cu 배선의저저항화를실현할수 있는 Cu 배선의형성방법에관한것이다. 표면에소정패턴의트렌치가형성된 Si 함유막인층간절연막을가지는웨이퍼에대하여, 트렌치를매립하는 Cu 배선을형성하는 Cu 배선의형성방법으로서, 적어도트렌치의표면에, 하지와의반응에서자기정합배리어막이되는 Mn막을 CVD에의해형성하는공정과, Cu막을 PVD에의해형성하여트렌치내에 Cu막을매립하는공정과, CMP에의해전체면을연마하여트렌치내에 Cu 배선을형성하는공정을포함한다.
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公开(公告)号：KR1020160111333A
公开(公告)日：2016-09-26
申请号：KR1020160029686
申请日：2016-03-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28 , H01L21/02 , H01L21/285
Abstract: MnO막위에양호한표면상태의 Ru막을양호한성막성으로연속막으로서성막할수 있어서, 양호한매립성으로 Cu를매립한다. 표면에소정패턴의오목부(203)가형성된층간절연막(202)을갖는기판(W)에대해, 오목부(203)를매립하는 Cu 배선을제조할때에, MnO막(205)을 ALD에의해형성하는공정과, MnO막의표면에수소라디칼처리를실시하는공정과, 수소라디칼처리후의 MnO막의표면에 Ru막(206)을 CVD에의해형성하는공정과, Cu계막(207)을 PVD에의해형성하여오목부(203) 내에 Cu계막(207)을매립하는공정을구비하고, Ru막(206)을성막할때에, 핵형성이촉진되며, 또한표면평활성이높은상태로 Ru막(206)이성막되도록, MnO막(205)의성막조건및 수소라디칼처리의조건을규정한다.
Abstract translation: 本发明提供一种制造铜布线的方法，通过良好的成膜性能在MnO_x膜上形成具有良好表面状态的Ru膜作为连续膜，能够通过良好的掩埋性能掩埋Cu。 当Cu布线相对于具有层间绝缘膜（202）的衬底（W）埋入凹部（203），其中在表面上形成预定图案的凹部（203）时，该方法包括： 通过原子层沉积（ALD）形成MnO_x膜（205）; 在所述MnO_x膜（205）的表面上进行氢自由基处理的工序; 在氢自由基处理之后通过化学气相沉积（CVD）在MnO_x膜的表面上形成Ru膜（206）的工艺; 以及通过物理气相沉积（PVD）形成Cu基膜（207）以将Cu基膜（207）埋入凹部（203）中的工艺。 当形成Ru膜（206）时，限定MnO_x膜（205）的成膜条件和氢自由基加工条件，以促进核形成，并在高表面光滑度的状态下形成Ru膜（206）。
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公开(公告)号：KR101532814B1
公开(公告)日：2015-06-30
申请号：KR1020117006624
申请日：2009-09-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/28
CPC classification number: H01L21/76814 , C23C16/0236 , C23C16/16 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76826 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76864
Abstract: 구리(Cu) 금속에서의일렉트로마이그레이션및 스트레스마이그레이션을개선하기위하여, 반도체디바이스에루테늄(Ru) 금속을증착시키기위한방법이제공된다. 본발명의실시예는, NH(x≤3) 라디칼과 H 라디칼에의해금속층과로우-k 유전체재료를갖는패턴형성기판을처리하는처리단계를포함하여, 로우-k 유전체재료에대하여금속층상에 Ru 금속캡층을선택적으로형성하는것을개선시킨다.
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公开(公告)号：KR1020140080445A
公开(公告)日：2014-06-30
申请号：KR1020130159805
申请日：2013-12-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/768 , H01L21/285 , H01L23/532
CPC classification number: H05K3/107 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H05K3/146 , H05K3/388 , H05K3/465 , H05K2203/095 , H05K2203/1338 , H05K2203/1476 , H01L2924/01029 , H01L2924/00
Abstract: [Task] The present invention provides a Cu wiring forming method capable of forming a barrier film thinner and more uniform than a concave part and having low resistance of a Cu wiring while ensuring high barrier properties. [Solution] A Cu wiring forming method forming a Cu wiring (208) filling a trench (203) for a wafer (W) having an interlayer insulating film (202) in which the trench (203) with a predetermined pattern is formed on the surface comprises forming a barrier film (204) composed of a TaAlN film on the surface of the trench (203) by thermal ALD or thermal CVD; filling the trench (203) with a Cu film (206) by forming the Cu film; and forming a Cu wiring (208) within the trench (203) by polishing the entire surface by CMP.
Abstract translation: [任务]本发明提供一种Cu布线形成方法，其能够形成比凹部更薄且更均匀的阻挡膜，并且在确保高阻隔性的同时具有低的Cu布线电阻。 [解决方案]形成填充用于具有层间绝缘膜（202）的晶片（W）的沟槽（203）的Cu布线（208）的Cu布线形成方法，其中在所述沟槽（203）上形成具有预定图案的沟槽（203） 表面包括通过热ALD或热CVD在沟槽（203）的表面上形成由TaAlN膜构成的阻挡膜（204）; 通过形成Cu膜而用Cu膜（206）填充沟槽（203）; 以及通过CMP抛光整个表面在沟槽（203）内形成Cu布线（208）。
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