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    플라즈마 처리 장치
    1.
    发明公开
    플라즈마 처리 장치 有权
    等离子体加工设备

    公开(公告)号：KR1020120042775A

    公开(公告)日：2012-05-03

    申请号：KR1020120011804

    申请日：2012-02-06

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 마츠도다츠오 ,  히모리신지 ,  이마이노리아키 ,  오세다케시 ,  아베준 ,  가츠누마다카유키

    IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

    Abstract: PURPOSE: A plasma processing apparatus is provided to improve the stability and reliability of a plasma process by efficiently preventing the generation of charging damage. CONSTITUTION: An upper electrode(38) and a bottom electrode(12) are arranged in parallel facing each other in a processing container(10) which is vacuum exhaustible. A first radio frequency is applied to the bottom electrode passing through a first adapter(34) rather than a first radio frequency power(32). A controller(68) controls the first radio frequency power. A first period has first amplitude in which the first radio frequency contributing to plasma generation produces plasma. A second period has second amplitude in which the plasma is materially not produced. The first and second periods are alternatively repeated at a certain cycle.

    Abstract translation: 目的：提供等离子体处理装置，通过有效地防止产生充电损伤来提高等离子体工艺的稳定性和可靠性。 构成：在真空可耗尽的处理容器（10）中，上部电极（38）和下部电极（12）相互平行地排列。 第一射频被施加到穿过第一适配器（34）而不是第一射频功率（32）的底部电极。 控制器（68）控制第一射频功率。 第一时段具有第一幅度，其中有助于等离子体产生的第一射频产生等离子体。 第二时段具有第二幅度，其中等离子体实质上不产生。 交替地，在一个周期重复第一和第二周期。

    플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
    2.
    发明公开
    플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 有权
    等离子体加工设备，等离子体处理方法和储存介质

    公开(公告)号：KR1020090018582A

    公开(公告)日：2009-02-20

    申请号：KR1020080079816

    申请日：2008-08-14

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 마츠도다츠오 ,  히모리신지 ,  이마이노리아키 ,  오세다케시 ,  아베준 ,  가츠누마다카유키

    IPC: H05H1/24 ,  H05H1/30 ,  H05H1/34

    CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

    Abstract: A plasma processing apparatus, and the plasma processing method and a storage media are provided to effectively prevent generation of charging damage and to realize stability and reliability of plasma processing. An object to be processed is mounted on a first electrode in a processing chamber(10). A second electrode faces parallel to the first electrode in processing chamber. A processing gas supply unit(62) supplies a processing gas to a processing space between the first and second electrodes. A first radio frequency feeding unit applies the first radio frequency contributing to a plasma generation of the processing gas. A controller(68) controls the first radio frequency feeding unit to alternate the first and second periods. In a first period, the first radio frequency of a first amplitude creates plasma. In a second period, the first radio frequency does not create plasma substantially.

    Abstract translation: 提供等离子体处理装置，等离子体处理方法和存储介质，以有效地防止产生充电损坏并实现等离子体处理的稳定性和可靠性。 要处理的物体安装在处理室（10）中的第一电极上。 第二电极在处理室中平行于第一电极。 处理气体供给单元（62）将处理气体供给到第一和第二电极之间的处理空间。 第一射频馈送单元施加有助于处理气体的等离子体产生的第一射频。 控制器（68）控制第一射频馈送单元交替第一和第二周期。 在第一时段中，第一幅度的第一射频产生等离子体。 在第二时段中，第一射频不产生等离子体。

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