公开(公告)号：KR101998520B1

公开(公告)日：2019-07-09

申请号：KR1020180071244

申请日：2018-06-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠쥰 ,  마츠도다츠오 ,  고시미즈치시오

IPC: H01L21/02 ,  H05H1/46 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/60

公开(公告)号：KR101872076B1

公开(公告)日：2018-06-27

申请号：KR1020150154315

申请日：2015-11-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠쥰 ,  마츠도다츠오 ,  고시미즈치시오

IPC: H01L21/02 ,  H05H1/46 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32183

Abstract: (과제) 피처리기판에대하여플라즈마처리를행하는플라즈마처리장치에있어서, 플라즈마밀도의면 내분포를조정할수 있는기술을제공한다. (해결수단) 처리용기(1) 내의탑재대(21)상에탑재된피처리기판 W에대하여, 처리가스를플라즈마화하여처리를행하는플라즈마처리장치는, 유도결합에의해처리가스를플라즈마화하는플라즈마발생부를구비한다. 플라즈마발생부의제 1 고주파안테나(541)는, 양단에개방단을갖고, 고주파의주파수에대응하는공진주파수를갖는소용돌이코일로이루어지고, 그중앙부에고주파의공급점과, 콘덴서(64)를통해서접지되는접지점을구비한다. 제 2 고주파안테나(542)는, 소용돌이코일로이루어지고, 제 1 고주파안테나(541)를구성하는고주파안테나소자(541a, 541b)의사이에배치된다. 임피던스조정부(62~65)는, 양고주파안테나소자(541a, 541b)에서로상이한공진주파수를갖게한다.

公开(公告)号：KR101560003B1

公开(公告)日：2015-10-13

申请号：KR1020090061274

申请日：2009-07-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고시미즈치시오 ,  이와타마나부 ,  마츠도다츠오

IPC: H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32522 ,  H01J37/32623

Abstract: 플라즈마처리에이용되는각종부재의온도를, 플라즈마처리의개시단계부터최적의온도로제어하는것이가능한방법을제공한다. 피처리기판을플라즈마처리하는플라즈마처리장치내에서이용되는챔버내부재의온도제어방법으로서, 상기챔버내부재에복수의급전부를마련하고, 상기급전부를통해전력을공급하여가열하는동시에, 상기챔버내부재의저항값또는비 저항을측정하고, 상기저항값또는비 저항으로부터추측하는상기챔버내부재의온도에의거하여상기전력을제어한다.

公开(公告)号：KR1020100005683A

公开(公告)日：2010-01-15

申请号：KR1020090061274

申请日：2009-07-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고시미즈치시오 ,  이와타마나부 ,  마츠도다츠오

IPC: H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32522 ,  H01J37/32623

Abstract: PURPOSE: An in-chamber member temperature control method, an in-chamber member, a substrate mounting table, and a plasma processing apparatus including the same are provided to optimize the temperature of all kinds of members to be used for plasma processing. CONSTITUTION: An in-chamber member temperature control method for a plasma processing apparatus comprises the steps of: preparing power supply units a member in a chamber(1), measuring the resistance or specific resistance of the in-chamber member while supplying power and heating, and controlling the power based on the temperature of the in-chamber member predicted from the resistance or specific resistance.

Abstract translation: 目的：提供室内部件温度控制方法，室内部件，基板安装台以及包括其的等离子体处理装置，以优化用于等离子体处理的各种部件的温度。 构成：用于等离子体处理装置的室内成员温度控制方法包括以下步骤：准备供电单元，在室（1）中的元件，在供电和加热时测量室内部件的电阻或电阻率 并且根据从电阻或电阻率预测的室内部件的温度来控制功率。

公开(公告)号：KR1020040093017A

公开(公告)日：2004-11-04

申请号：KR1020040028211

申请日：2004-04-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토나오키 ,  야마자와요헤이 ,  고시미즈치시오 ,  마츠도다츠오 ,  세가와스미에

IPC: H01L21/66

CPC classification number: G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

Abstract: PURPOSE: A plasma monitoring method and apparatus and a plasma processing apparatus are provided to measure precisely electron density of plasma even under a low electron density or a high pressure condition by using a network analyzer. CONSTITUTION: An antenna probe(52a) is placed at a desired monitoring position inside or near to plasma of a predetermined space. Frequency-variable electromagnetic waves are radiated from the antenna probe to the plasma. The antenna probe receives the electromagnetic waves reflected from the plasma. By measuring a complex reflection coefficient based on the incident and reflected electromagnetic waves using a network analyzer(68), an imaginary part is obtained from the complex reflection coefficient. A resonant frequency capable of nullifying the value of the imaginary part is measured by sweeping frequencies of the electromagnetic waves. The electron density of plasma is calculated based on the measured resonant frequency.

Abstract translation: 目的：提供等离子体监测方法和装置以及等离子体处理装置，通过使用网络分析仪，即使在低电子密度或高压条件下也能精确地测量等离子体的电子密度。 构成：将天线探针（52a）放置在预定空间的等离子体内或附近的期望的监视位置。 可变频电磁波从天线探针辐射到等离子体。 天线探头接收从等离子体反射的电磁波。 通过使用网络分析器（68）测量基于入射和反射电磁波的复反射系数，从复反射系数获得虚部。 可以通过扫描电磁波的频率来测量能够使虚部的值无效的谐振频率。 基于测量的谐振频率计算等离子体的电子密度。

公开(公告)号：KR102244353B1

公开(公告)日：2021-04-23

申请号：KR1020200178706

申请日：2020-12-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이와시타신야 ,  스즈키아유타 ,  신도다카히로 ,  뎀포가즈키 ,  마츠도다츠오 ,  모리타야스시 ,  기쿠치다카미치 ,  모리야츠요시

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  C23C16/455

Abstract: (과제) 동일한성막장치에있어서성막되는박막의막질을다양하게제어할수 있는기술을제공한다. (해결수단) 본개시의성막장치는, 진공배기가능한처리용기와, 하부전극과, 상부전극과, 가스공급부와, 전압인가부와, 전환부를구비한다. 하부전극에는, 처리용기내에서피처리기판이탑재된다. 상부전극은, 처리용기내에서하부전극에대향하여배치된다. 가스공급부는, 상부전극과하부전극의사이의처리공간에서플라즈마화하는성막원료가스를처리공간에공급한다. 전압인가부는, 고주파전원및 직류전원을갖고, 고주파전원및 직류전원중 적어도한쪽으로부터출력되는전압을상부전극에인가한다. 전환부는, 상부전극에인가되는전압을, 고주파전원으로부터출력되는고주파전압과, 직류전원으로부터출력되는직류전압과, 고주파전압에직류전압이중첩된중첩전압에서전환한다.

公开(公告)号：KR101852310B1

公开(公告)日：2018-04-25

申请号：KR1020170160011

申请日：2017-11-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠쥰 ,  마츠도다츠오 ,  고시미즈치시오

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J37/32651 ,  H01J2237/334

Abstract: 플라즈마처리장치는제 1 및제 2 안테나소자를구비한고주파안테나를포함한다. 제 1 안테나소자의일단부는접지되고, 타단부는고주파전원에접속된다. 제 2 안테나소자의일단부는개방단이고, 또한타단부는제 1 안테나소자의일단부및 타단부의한쪽에접속되고, 제 2 안테나소자의선로길이는 ((λ/4) + nλ/2)(λ는진공중의고주파의파장이며, n는자연수)에단축율을곱한값이다. 고주파전원으로부터고주파안테나측을보았을때의회로는, 고주파전력의주파수를변경했을때에, 임피던스조정부의조정에의해 2개의공진주파수가나타나도록구성되어있다.

公开(公告)号：KR1020160053824A

公开(公告)日：2016-05-13

申请号：KR1020150154648

申请日：2015-11-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠쥰 ,  마츠도다츠오 ,  고시미즈치시오

IPC: H01L21/02 ,  H05H1/46 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32651

Abstract: 본발명은, 피처리기판에대해플라즈마처리를행하는플라즈마처리장치에있어서, 플라즈마밀도의면내분포를조정할수 있는기술을제공한다. 처리용기(1) 내의탑재대(21) 상에탑재된피처리기판 W에대해, 처리가스를플라즈마화하여플라즈마처리를행하는플라즈마처리장치는유도결합에의해서처리가스를플라즈마화하는플라즈마발생부를구비한다. 플라즈마발생부의제 1 고주파안테나(541)는유전체창(53)을개재하여처리용기(10)에인접하여배치되는소용돌이코일로이루어진다. 제 2 고주파안테나(542)는제 1 고주파안테나(541)의외주측또는내주측에배치되는소용돌이코일로이루어진다. 또한, 임피던스조정부(62~64)는고주파전원(61)에서보았을때의회로의공진주파수를조정하고, 당해회로는고주파의주파수를바꾸어갈 때에, 2개의공진주파수가나타나도록구성되어있다.

Abstract translation: 本发明在等离子体处理装置中，对待处理的基板进行等离子体处理，提供能够调整等离子体密度的面内分布的技术。 对处理容器（1）中的安装台（21）上进行等离子体处理的等离子体处理装置，通过将处理气体制成等离子体，对等待处理的基板W进行等离子体处理，其特征在于，包括： 通过电感耦合进入等离子体。 等离子体产生部分的第一高频天线（541）由与处理容器（10）相邻布置的螺旋线圈组成，介电窗口（53）介于其间。 第二高频天线（542）由布置在第一高频天线（541）的外周侧或内周侧的螺旋线圈构成。 此外，当从高频功率（61）看时，阻抗调节部件（62-64）调节电路的谐振频率。 相应的电路配置为在改变高频波频率时显示两个共振频率。

公开(公告)号：KR1020090101129A

公开(公告)日：2009-09-24

申请号：KR1020090024130

申请日：2009-03-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠도다츠오 ,  히모리신지

IPC: H01L21/3065 ,  H01L21/205

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32642

Abstract: PURPOSE: A plasma processing apparatus is provided to improve the uniformity inside a side of a plasma process in a wide RF frequency domain or wide RF power domain. CONSTITUTION: A plasma processing apparatus includes a process container(10), a lower electrode(12), an upper electrode(38), a process gas supply unit(62), a high frequency feeder, and a conductive high frequency ground unit. A process container vacuum-exhausts. The lower electrode mounts the substrate to be processed inside the process container. The upper electrode is faced in parallel to the lower electrode inside the process container. The process gas supply unit supplies the process gas to a process space between the upper electrode and the lower electrode. The high frequency supply unit applies the high frequency for generating the plasma of the process gas to the lower electrode or the upper electrode by the high frequency discharge. The conductive high frequency ground unit receives the high frequency discharged to the outside of the radius direction in a peripheral part of the electrode to which the high frequency is applied. The conductive high frequency ground unit covers the peripheral part of the electrode to which the high frequency is applied.

Abstract translation: 目的：提供等离子体处理装置，以改善宽RF频域或宽RF功率域内的等离子体处理侧的均匀性。 构成：等离子体处理装置包括处理容器（10），下电极（12），上电极（38），工艺气体供给单元（62），高频给料器和导电高频接地单元。 一个处理容器真空排气。 下电极将待处理的基板安装在处理容器内。 上电极与处理容器内的下电极平行。 处理气体供给单元将处理气体供给到上部电极和下部电极之间的处理空间。 高频电源单元通过高频放电将高频用于产生处理气体的等离子体到下电极或上电极。 导电高频接地单元在施加高频的电极的周边部分中接收向半径方向外侧放电的高频。 导电高频接地单元覆盖施加高频率的电极的周边部分。

公开(公告)号：KR1020090018582A

公开(公告)日：2009-02-20

申请号：KR1020080079816

申请日：2008-08-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠도다츠오 ,  히모리신지 ,  이마이노리아키 ,  오세다케시 ,  아베준 ,  가츠누마다카유키

IPC: H05H1/24 ,  H05H1/30 ,  H05H1/34

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A plasma processing apparatus, and the plasma processing method and a storage media are provided to effectively prevent generation of charging damage and to realize stability and reliability of plasma processing. An object to be processed is mounted on a first electrode in a processing chamber(10). A second electrode faces parallel to the first electrode in processing chamber. A processing gas supply unit(62) supplies a processing gas to a processing space between the first and second electrodes. A first radio frequency feeding unit applies the first radio frequency contributing to a plasma generation of the processing gas. A controller(68) controls the first radio frequency feeding unit to alternate the first and second periods. In a first period, the first radio frequency of a first amplitude creates plasma. In a second period, the first radio frequency does not create plasma substantially.

Abstract translation: 提供等离子体处理装置，等离子体处理方法和存储介质，以有效地防止产生充电损坏并实现等离子体处理的稳定性和可靠性。 要处理的物体安装在处理室（10）中的第一电极上。 第二电极在处理室中平行于第一电极。 处理气体供给单元（62）将处理气体供给到第一和第二电极之间的处理空间。 第一射频馈送单元施加有助于处理气体的等离子体产生的第一射频。 控制器（68）控制第一射频馈送单元交替第一和第二周期。 在第一时段中，第一幅度的第一射频产生等离子体。 在第二时段中，第一射频不产生等离子体。