公开(公告)号：KR1020090024867A

公开(公告)日：2009-03-10

申请号：KR1020070089763

申请日：2007-09-05

Applicant: 삼성전자주식회사

Inventor： 안드레이우샤코프 ,  이영희 ,  김경선 ,  신한수

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32825

Abstract: An etching device using the plasma is provided to make the plasma uniform when pressure is low and improve the direct of the etching component and the reaction gas which is income into the semiconductor test sample. An etching device using the plasma includes a main body in which a lower part reaction chamber(22) and a top reaction chamber(21) is formed; an etching gas inlet port(200) providing the etching gas; an inductively coupled plasma source(70) which is provided to one side of the main body and makes the etching gas to the plasma; a grid electrode structure(100) including a plurality of loads which are separated from each other, and moves the plasma to the lower part reaction chamber from the top reaction chamber; a dissociation degree adjustment inlet for toxic gas(300) in which the dissociation degree adjustment gas is flowed.

Abstract translation: 提供使用等离子体的蚀刻装置，以使得当压力低时等离子体均匀，并且改善作为半导体测试样品收入的蚀刻部件和反应气体的直接。 使用等离子体的蚀刻装置包括形成下部反应室（22）和顶部反应室（21）的主体， 提供蚀刻气体的蚀刻气体入口（200）; 电感耦合等离子体源（70），其设置在主体的一侧并使等离子体的蚀刻气体; 栅极电极结构（100），其包括彼此分离的多个负载，并且将所述等离子体从所述顶部反应室移动到所述下部反应室; 其中解离度调节气体流过的有毒气体的离解度调节入口（300）。

公开(公告)号：KR1020110083979A

公开(公告)日：2011-07-21

申请号：KR1020100003986

申请日：2010-01-15

Applicant: 삼성전자주식회사

Inventor： 신한수 ,  김경선 ,  강동우 ,  이상호

IPC: H01L21/687 ,  H01L21/02

CPC classification number: H01L21/68785 ,  H01J37/32724 ,  H01L21/67017

Abstract: PURPOSE: A plasma processing apparatus is provided to directly control the temperature of a focus ring by including the focus ring including a coolant path for controlling a temperature. CONSTITUTION: A focus ring(140) surrounds the outer surface of a support stand(130). The focus ring includes a refrigerant path(144) for controlling the temperature. A control unit includes a refrigerant circuit for controlling the temperature. An insulation unit insulates the control unit. An adhesive layer is formed between the control unit and the insulation unit to improve thermal transmission efficiency.

Abstract translation: 目的：提供等离子体处理装置，通过包括用于控制温度的冷却剂路径的聚焦环来直接控制聚焦环的温度。 构成：聚焦环（140）围绕支撑架（130）的外表面。 聚焦环包括用于控制温度的制冷剂路径（144）。 控制单元包括用于控制温度的制冷剂回路。 绝缘单元使控制单元绝缘。 在控制单元和绝缘单元之间形成粘合剂层以提高热传递效率。

公开(公告)号：KR1020100123974A

公开(公告)日：2010-11-26

申请号：KR1020090042973

申请日：2009-05-18

Applicant: 삼성전자주식회사

Inventor： 신한수 ,  성덕용

IPC: H05H1/34 ,  H05H1/24

CPC classification number: H01J37/32733 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/33 ,  H05H1/46

Abstract: PURPOSE: A plasma processing apparatus is provided to accurately control an etching rate by actively controlling the height of a confinement ring. CONSTITUTION: A processing chamber(2) executes a plasma process. An upper electrode(20) and a lower electrode(30) face each other inside the processing chamber. A confinement ring(40) is located in a location parallel to the lower electrode in order to control the plasma generation space between electrodes(10). A mobile unit(50) varies the volume of the plasma generation space by transferring the confinement ring in a top and bottom direction. The volume is increased in the state that the confinement ring moves in a lower direction. The volume diminishes in the state that the confinement ring moves in an upper direction.

Abstract translation: 目的：提供等离子体处理装置，以通过主动地控制限制环的高度来精确地控制蚀刻速率。 构成：处理室（2）执行等离子体处理。 上部电极（20）和下部电极（30）在处理室内部彼此面对。 限制环（40）位于与下电极平行的位置，以便控制电极（10）之间的等离子体产生空间。 移动单元（50）通过在顶部和底部方向上传送限制环来改变等离子体产生空间的体积。 在限制环沿较低方向移动的状态下，体积增加。 在限制环沿上方移动的状态下体积减小。

公开(公告)号：KR1020100083917A

公开(公告)日：2010-07-23

申请号：KR1020090003247

申请日：2009-01-15

Applicant: 삼성전자주식회사

Inventor： 정경석 ,  이재봉 ,  한경현 ,  신한수

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/205

CPC classification number: H01J37/32449 ,  H01L21/67069

Abstract: PURPOSE: A gas supply system for a plasma etching apparatus is provided to effectively regulate the uniformity of an etching operation using separate distributors according to the characteristics of processing gases. CONSTITUTION: A processing gas is injected into a chamber trough a gas inlet. The gas inlet includes a first gas inlet(20) and a second gas inlet(21). A supplying line(33) includes a first supplying line(33a) and a second supplying line(33b). A plurality of distributors obtains the processing gas from the supplying line and distributes the processing gas. The processing gas flows from the distributor to the gas inlet through a flowing path(36).

Abstract translation: 目的：提供一种用于等离子体蚀刻装置的气体供应系统，以根据处理气体的特性有效地调节使用分开的分配器的蚀刻操作的均匀性。 构成：处理气体通过气体入口注入室内。 气体入口包括第一气体入口（20）和第二气体入口（21）。 供给线（33）包括第一供给线（33a）和第二供给线（33b）。 多个分配器从供应管路获得处理气体并分配处理气体。 处理气体通过流动路径（36）从分配器流到气体入口。

公开(公告)号：KR1020120073884A

公开(公告)日：2012-07-05

申请号：KR1020100135805

申请日：2010-12-27

Applicant: 삼성전자주식회사

Inventor： 신한수 ,  정경석 ,  이지명 ,  백동석 ,  전윤광

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32522 ,  H05H1/46 ,  H05H2001/4652

Abstract: PURPOSE: An inductively coupled plasma processing apparatus is provided to prevent the dispersion of the inductive electromagnetic field by arranging a heater at the outer side of a dielectric window. CONSTITUTION: An inductively coupled plasma processing apparatus(1b) comprises a chamber(20), a dielectric window(11b), an antenna(100), a heater(13b), a thermal conductive material(110b) stored in an inner space of the dielectric window, a electrostatic chuck(22), and a susceptor. The heater is arranged in outer both sides of the dielectric window. The thermal conductive material regularly maintains the temperature of a dielectric window by improving heat transmission to the dielectric window. The thermal conductive material has electrical non-conductivity. An inductive electromagnetic field regularly passes through the inside of the chamber without dispersion or distortion.

Abstract translation: 目的：提供电感耦合等离子体处理装置，通过在电介质窗的外侧布置加热器来防止感应电磁场的分散。 电感耦合等离子体处理装置（1b）包括一个室（20），一个电介质窗（11b），一个天线（100），一个加热器（13b），一个保存在内部空间的导热材料 电介质窗，静电卡盘（22）和基座。 加热器布置在电介质窗口的两侧。 导热材料通过改善对电介质窗的传热来有规律地保持电介质窗的温度。 导热材料具有非导电性。 感应电磁场定期地通过腔室内部，而没有分散或变形。

公开(公告)号：KR1020110055838A

公开(公告)日：2011-05-26

申请号：KR1020090112432

申请日：2009-11-20

Applicant: 삼성전자주식회사

Inventor： 이상호 ,  김경선 ,  신한수 ,  정상민

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32385 ,  H01J37/3244

Abstract: PURPOSE: A plasma processing apparatus is provided to variably divide an edge area and an extreme edge area, thereby increasing the process uniformity on the frontal surface of a wafer. CONSTITUTION: A gas distributing unit(16) comprises a plurality of barriers. The barriers divides a gas distributing part(40) into a center area(D1), an edge area(D2), and an extreme edge area(D3) corresponding to a wafer. A first gas supply unit(66) supplies a gas to the center area and the edge area. A second gas supply unit(75) supplies a gas to the extreme edge area. A barrier for separating the edge area from the extreme edge area includes a variable barrier(90).

Abstract translation: 目的：提供等离子体处理装置以可变地划分边缘区域和极端边缘区域，从而增加晶片正面上的工艺均匀性。 构成：气体分配单元（16）包括多个屏障。 隔板将气体分配部（40）分割成对应于晶片的中心区域（D1），边缘区域（D2）和极限边缘区域（D3）。 第一气体供给单元（66）向中心区域和边缘区域供给气体。 第二气体供给单元（75）将气体供给到最外缘区域。 用于将边缘区域与最边缘区域分离的屏障包括可变屏障（90）。

公开(公告)号：KR1020090019571A

公开(公告)日：2009-02-25

申请号：KR1020070084108

申请日：2007-08-21

Applicant: 삼성전자주식회사

Inventor： 전윤광 ,  김경선 ,  신한수

IPC: H01L21/304 ,  H01L21/02

Abstract: A cleaning apparatus is provided to prevent the substrate from being contaminated again due to separated particles by discharging the separated particle from the substrate to the outlet. In a cleaning apparatus, a nozzle apparatus is installed within a clean room, and dry ice is jetted out the substrate within the clean room. The nitrogen supply apparatus is behind of the nozzle apparatus and sprays the nitrogen toward. The outlet is connected with an inlet pump for pumping gas inside of the clean room. The nitrogen supply apparatus includes a spray unit having a plurality of spray balls for making a streamline toward and a control valve for controlling the amount of the nitrogen through the spray unit.

Abstract translation: 提供了一种清洁装置，以通过将分离的颗粒从基板排出到出口来防止由于分离的颗粒而再次污染基板。 在清洁装置中，将喷嘴装置安装在洁净室内，并将干冰从洁净室内的基板喷出。 氮气供给装置位于喷嘴装置的后面，朝向喷射氮气。 出口与入口泵连接，用于抽吸洁净室内的气体。 氮气供给装置包括具有多个用于使流线流动的喷射球的喷射单元和用于通过喷雾单元控制氮气量的控制阀。

公开(公告)号：KR1020080098953A

公开(公告)日：2008-11-12

申请号：KR1020070044411

申请日：2007-05-08

Applicant: 삼성전자주식회사

Inventor： 권태용 ,  김경선 ,  신한수

IPC: H01L21/02

Abstract: The antenna of the plasma system for processing the semiconductor wafer or LCD is formed into rhomboid. Therefore, it can be processed while enhancing the plasma density at the end part of the processed product of square or the bar type. The plasma system is comprised as follows. A power source is for supplying the RF power. The processed product is positioned in a chamber. The plasma is generated in the chamber. The rhombic antenna is for converting the RF power into the electromagnetic field. The adapter controls the impedance of the RF power. The air exhausting unit is for exhausting the reaction gas within the chamber. The antenna is formed into the coil type to deliver the energy to the chamber by the inductively coupled method. The antenna comprises the power inlet(21) for electricity and the power outlet.

Abstract translation: 用于处理半导体晶片或LCD的等离子体系统的天线形成为菱形。 因此，可以在提高正方形或棒状加工产品的端部处的等离子体密度的同时进行加工。 等离子体系统如下。 电源用于提供RF功率。 加工后的产品位于一个室内。 在室中产生等离子体。 菱形天线用于将RF功率转换成电磁场。 适配器控制RF功率的阻抗。 排气单元用于排出室内的反应气体。 天线形成为线圈类型，通过电感耦合方式将能量输送到腔室。 天线包括用于电力的电源入口（21）和电源插座。

公开(公告)号：KR101519024B1

公开(公告)日：2015-05-12

申请号：KR1020090003247

申请日：2009-01-15

Applicant: 삼성전자주식회사

Inventor： 정경석 ,  이재봉 ,  한경현 ,  신한수

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/205

Abstract: 본 발명은 플라즈마 식각 장치의 가스공급장치에 관한 것으로서, 특히 기판이 처리되는 챔버에 공급되는 공정가스의 특성에 따라 별도의 분배기를 사용함으로써 효과적인 식각 균일도 조절이 가능한 플라즈마 식각 장치의 가스공급장치에 관한 것이다.

公开(公告)号：KR1020100022146A

公开(公告)日：2010-03-02

申请号：KR1020080080673

申请日：2008-08-19

Applicant: 삼성전자주식회사

Inventor： 성덕용 ,  블라디미르볼리네츠 ,  안드레이우샤코프 ,  박민준 ,  신한수

IPC: H05H1/24 ,  H05H1/36

CPC classification number: H01J37/32174 ,  H01J37/32091

Abstract: PURPOSE: A plasma processing apparatus and a method thereof are provided to uniformly maintain the plasma in the pulse on and pulse off by applying a plasma maintaining power. CONSTITUTION: A chamber processes a semiconductor substrate by generating the plasma. Top and bottom electrodes(13, 14) are arranged inside the chamber. A first radio frequency power source(21) applies a first radio frequency power either of the top and bottom electrode in pulse mode. A second harmonic wave power source(22) applies a second high frequency power either of the top and bottom electrode in the other one to the persistence mode. A Controller controls the first and second harmonic wave powers. The first radio frequency power is the source power for the plasma production at the low pressure band. The duty ratio of the first radio frequency power is 20~90%.

Abstract translation: 目的：提供等离子体处理装置及其方法，通过施加等离子体维持功率来均匀地维持脉冲中的等离子体和脉冲。 构成：室通过产生等离子体来处理半导体衬底。 顶部和底部电极（13,14）布置在室内。 第一射频电源（21）以脉冲模式施加顶电极和底电极中的任一个的第一射频功率。 第二谐波电源（22）将第二高频电源中的另一个中的顶电极和底电极施加到持续模式。 A控制器控制第一和第二谐波功率。 第一个射频功率是低压带等离子体生产的源功率。 第一个射频功率的占空比为20〜90％。