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公开(公告)号：KR20210030110A
公开(公告)日：2021-03-17
申请号：KR1020190111647A
申请日：2019-09-09
Applicant: 삼성전자주식회사
IPC: H04M1/725
CPC classification number: H04M1/72454 , H04M2201/26 , H04M2201/34 , H04M2201/36 , H04M2201/38 , H04M2250/12
Abstract: 본 발명은 통신 모듈을 제어하는 방법 및 그 전자 장치에 관한 것이다.
본 발명에 따른 전자 장치는, 적어도 하나의 안테나 모듈, 온도 센서, 전력 증폭기(power amplifier), 저잡음 증폭기(low noise amplifier), 위상 천이기(phase shifter) 및 스위치를 포함하는 통신 모듈, 및 프로세서를 포함하고, 상기 프로세서는, 상기 온도 센서를 이용해 온도를 측정하고, 상기 측정된 온도가 설정된 온도보다 높은지를 확인하고, 상기 확인된 온도가 설정된 온도보다 높으면 상기 통신 모듈의 전력 증폭기, 저잡음 증폭기, 및/또는 위상 천이기 중 적어도 하나를 제어하여 다른 장치와 통신하도록 설정될 수 있다.-
公开(公告)号：KR1020170096771A
公开(公告)日：2017-08-25
申请号：KR1020160018443
申请日：2016-02-17
Applicant: 삼성전자주식회사
Abstract: 본발명의다양한실시예들에따른전자장치는, 하우징; 상기하우징의내부에위치하며제 1 RF 신호및 제 2 RF 신호를출력하는 RF 회로; 상기하우징의내부에위치하며상기 RF 회로와전기적으로연결된프로세서; 상기 RF 회로와전기적으로연결된제 1 방사체; 상기제 1 방사체와전기적으로연결된제 2 방사체; 및상기하우징의내부에위치하며상기프로세서및 상기제 2 방사체와전기적으로연결된 RF 스위치;를포함하고상기프로세서는, 상기 RF회로로부터출력되는상기제 1 RF 신호및 상기제 2 RF 신호중 적어도하나를상기제 1 방사체및 상기제 2 방사체중 적어도하나로방사하도록상기 RF 스위치를제어할수 있다.
Abstract translation: 根据本发明的各种实施例的电子设备包括：外壳; RF电路，位于所述外壳内并输出第一RF信号和第二RF信号; 位于外壳内并电连接到RF电路的处理器; 电连接到RF电路的第一辐射器; 电连接到第一辐射器的第二辐射器; 以及RF开关，其位于外壳内并电连接到处理器和第二辐射器，其中处理器可操作以将从RF电路输出的第一RF信号和第二RF信号中的至少一个传输到处理器 RF开关可被控制以发射到第一辐射器和第二辐射器中的至少一个。
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公开(公告)号：KR1020110055838A
公开(公告)日：2011-05-26
申请号：KR1020090112432
申请日：2009-11-20
Applicant: 삼성전자주식회사
IPC: H01L21/3065
CPC classification number: H01L21/67069 , H01J37/32385 , H01J37/3244
Abstract: PURPOSE: A plasma processing apparatus is provided to variably divide an edge area and an extreme edge area, thereby increasing the process uniformity on the frontal surface of a wafer. CONSTITUTION: A gas distributing unit(16) comprises a plurality of barriers. The barriers divides a gas distributing part(40) into a center area(D1), an edge area(D2), and an extreme edge area(D3) corresponding to a wafer. A first gas supply unit(66) supplies a gas to the center area and the edge area. A second gas supply unit(75) supplies a gas to the extreme edge area. A barrier for separating the edge area from the extreme edge area includes a variable barrier(90).
Abstract translation: 目的：提供等离子体处理装置以可变地划分边缘区域和极端边缘区域，从而增加晶片正面上的工艺均匀性。 构成：气体分配单元（16）包括多个屏障。 隔板将气体分配部（40）分割成对应于晶片的中心区域（D1），边缘区域（D2）和极限边缘区域（D3）。 第一气体供给单元（66）向中心区域和边缘区域供给气体。 第二气体供给单元（75）将气体供给到最外缘区域。 用于将边缘区域与最边缘区域分离的屏障包括可变屏障（90）。
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公开(公告)号：KR100867123B1
公开(公告)日：2008-11-06
申请号：KR1020070033006
申请日：2007-04-03
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/31144
Abstract: 본 발명은 반도체소자의 식각방법에 관한 것으로, 특히 본 발명은 플루오르를 함유하지 않은 선구가스를 이용하여 포토레지스트 상에 보호막으로서 탄화수소막을 형성함으로써 점점 얇아지고 있는 포토레지스트에 대해서도 포토레지스트에 대한 높은 선택비를 가지는 식각 공정을 진행할 수 있어 식각 효율을 향상시킨다.
이를 위해 본 발명은 물질막 상에 포토레지스트막이 형성된 반도체 기판을 챔버에 넣고, 챔버에 플루오르를 함유하지 않는 선구가스를 주입하여 상기 포토레지스트막 상에 탄화수소막을 형성하고, 챔버에 식각가스를 주입하여 식각대상물질을 식각하는 것을 특징으로 한다.-
公开(公告)号：KR1020080090044A
公开(公告)日：2008-10-08
申请号：KR1020070033006
申请日：2007-04-03
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/31144 , H01L21/0273 , G03F7/11
Abstract: An etching method for a semiconductor device is provided to form a hydrocarbon membrane or a phosphorous-containing hydrocarbon membrane as a protective membrane on a photo-resist membrane by using a precursor gas not including fluorine, thereby performing an etching process with high PR(Photo-Resist) selectivity. An etching method for a semiconductor device comprises the following steps of: inserting a semiconductor substrate where a photo-resist membrane is formed on a material membrane into a chamber; forming a hydrocarbon membrane on the photo-resist membrane by injecting precursor gas not containing fluorine into the chamber; and etching a material to be etched by injecting etching gas into the chamber.
Abstract translation: 提供半导体器件的蚀刻方法，通过使用不含氟的前体气体在光致抗蚀剂膜上形成作为保护膜的烃膜或含磷烃膜，从而进行高PR（Photo -Resist）选择性。 半导体器件的蚀刻方法包括以下步骤：将在其上形成有光致抗蚀剂膜的半导体衬底插入到腔室中; 通过将不含氟的前体气体注入到所述室中在所述光致抗蚀剂膜上形成烃膜; 并通过将蚀刻气体注入到腔室中来蚀刻待蚀刻的材料。
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Patent Agency Ranking
公开(公告)号：KR1020030090310A
公开(公告)日：2003-11-28
申请号：KR1020020028366
申请日：2002-05-22
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: An apparatus for transferring a lead frame is provided to transfer simultaneously a single lead frame and a matrix lead frame by using an absorbing portion including a single absorbing portion and a matrix absorbing portion. CONSTITUTION: An apparatus for transferring a lead frame includes a guide(12), an absorbing portion(14), and a moving portion. The absorbing portion(14) is installed at both sides of the guide(12) in order to absorb a package body of a lead frame. The moving portion moves the guide(12) including the absorbing portion(14). The absorbing portion(14) includes a single absorbing portion(13) and a matrix absorbing portion(15). The single absorbing portion(13) is installed at a center of the absorbing portion(14) in order to absorb a single lead frame of the lead frame. The matrix absorbing portion(15) is installed at both sides of the single absorbing portion(13) in order to absorb a matrix lead frame of the lead frame.
Abstract translation: 目的：提供一种用于传送引线框架的装置，以通过使用包括单个吸收部分和矩阵吸收部分的吸收部分同时地传送单个引线框架和矩阵引线框架。 构成：用于传送引线框架的装置包括引导件（12），吸收部分（14）和移动部分。 吸收部分（14）安装在引导件（12）的两侧，以便吸收引线框架的封装主体。 移动部分移动包括吸收部分（14）的引导件（12）。 吸收部分（14）包括单个吸收部分（13）和基体吸收部分（15）。 单个吸收部分（13）安装在吸收部分（14）的中心处以吸收引线框架的单个引线框架。 矩阵吸收部分（15）安装在单个吸收部分（13）的两侧，以便吸收引线框架的矩阵引线框架。
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公开(公告)号：KR1020080111624A
公开(公告)日：2008-12-24
申请号：KR1020070059802
申请日：2007-06-19
Applicant: 삼성전자주식회사
IPC: H01L21/3065 , H01L21/304
CPC classification number: H01J37/32862 , H01J37/32091 , H01J37/32165
Abstract: A plasma-etching apparatus and a chamber cleaning method using the same are provided to maximize cleaning efficiency by evenly forming plasma in the inside of a chamber as high frequency power more than 60MHz is authorized in up and down parts of a electrode at the same time. A plasma-etching apparatus comprises a chamber(10), top and bottom electrodes(13,14), a radio frequency power(41), and a controller. In the chamber, an etching process of a substrate using plasma is made. The top and bottom electrode are arranged within the chamber. At the same time, the radio frequency power authorizes high frequency power to the top and bottom electrode. The controller controls the power fraction of the high frequency power applied to the top and bottom electrode at the same time. The controller controls plasma distribution for washing the inside of the chamber.
Abstract translation: 提供等离子体蚀刻装置和使用其的室清洁方法，以通过在室内均匀地形成等离子体来最大化清洁效率，因为同时在电极的上下部分授权超过60MHz的高频功率 。 等离子体蚀刻装置包括室（10），顶部和底部电极（13,14），射频功率（41）和控制器。 在室中，进行使用等离子体的衬底的蚀刻工艺。 顶部和底部电极布置在腔室内。 同时，射频功率授权高频电源到顶部和底部电极。 控制器同时控制施加到顶部和底部电极的高频功率的功率分数。 控制器控制等离子体分布以洗涤室内。
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公开(公告)号：KR1020080111801A
公开(公告)日：2008-12-24
申请号：KR1020070060206
申请日：2007-06-20
Applicant: 삼성전자주식회사
IPC: H01L21/3065 , H01L21/205
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/32165
Abstract: A plasma processing apparatus and method thereof are provided to maintain plasma density uniformly as the phase difference of the high frequency power is controlled with considering phase difference which is generated while high frequency power moves to top and bottom electrodes within a chamber. A plasma processing apparatus comprises a chamber(100), top and bottom electrodes(130,140), a high frequency power supply(200), and phase shifters(300,600). The chamber generates plasma and processes a semiconductor substrate. The top and bottom electrodes are arranged within the chamber. The high frequency power supply supplies high frequency power to the top and bottom electrodes. The phase shifter controls the phase difference of the high frequency power supplied to the top and bottom electrodes.
Abstract translation: 提供了一种等离子体处理装置及其方法，以通过考虑在高频功率移动到室内的顶部和底部电极时产生的相位差来控制高频功率的相位差来均匀地保持等离子体密度。 等离子体处理装置包括室（100），顶部和底部电极（130,140），高频电源（200）和移相器（300,600）。 腔室产生等离子体并处理半导体衬底。 顶部和底部电极布置在腔室内。 高频电源为顶部和底部电极提供高频电源。 移相器控制提供给顶部和底部电极的高频功率的相位差。
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公开(公告)号：KR1020170127724A
公开(公告)日：2017-11-22
申请号：KR1020160058189
申请日：2016-05-12
Applicant: 삼성전자주식회사
IPC: H01J37/32
CPC classification number: H01J37/32724 , H01J37/32091 , H01J37/3244 , H01J37/32642 , H01J37/3299 , H01J2237/334
Abstract: 본발명의기술적사상은플라즈마가처리되는공간을제공하는공정챔버, 상기공정챔버내에구비되며, 웨이퍼가탑재되는하부전극, 상기공정챔버내에구비되며, 상기하부전극과마주보는상부전극, 상기상부전극과상기하부전극사이로공정가스를공급하는가스공급부, 상기하부전극에탑재된상기웨이퍼의가장자리를둘러싸도록상기하부전극상에배치되는포커스링, 상기포커스링의하측에배치되고소정간격으로서로이격된제1 몸체들로이루어진엣지링, 상기제1 몸체들내부에설치된복수개의히터들, 및상기히터들각각의구동을제어하는히터제어기를포함하는플라즈마처리장치를제공한다.
Abstract translation: 本发明的技术思想是提供一种用于提供处理等离子体的空间的处理室，设置在其上安装晶片的处理室中的下电极，设置在处理室中的上电极， 并且，在下部电极上以包围搭载于下部电极上的晶片的边缘的方式配置有聚焦环，聚焦环配置在聚焦环的下侧， 由第一主体形成的边缘环，设置在第一主体中的多个加热器以及用于控制每个加热器的驱动的加热器控制器。
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公开(公告)号：KR1020170105897A
公开(公告)日：2017-09-20
申请号：KR1020160029145
申请日：2016-03-10
Applicant: 삼성전자주식회사
Abstract: 일실시예에따른전자장치는, 안테나방사체, 상기안테나방사체에제1 주파수대역의신호를급전하기위한제1 급전부, 상기안테나방사체에제2 주파수대역의신호를급전하기위한제2 급전부, 및상기안테나방사체에전기적으로연결된복수의접지부를포함할수 있다. 상기제1 급전부는복수의전기적경로(electrical path)를포함하는수동소자회로를통해상기안테나방사체및 적어도하나의접지부와연결될수 있다. 이외에도명세서를통해파악되는다양한실시예가가능하다.
Abstract translation: 根据实施例的电子设备包括天线辐射器，用于将第一频带的信号馈送到天线辐射器的第一馈线，用于将第二频带的信号馈送到天线辐射器的第二馈线， 并且多个接地部分电连接到天线辐射器。 第一馈电部分可以经由包括多个电路径的无源元件电路连接到天线辐射器和至少一个接地。 通过说明书已知的各种实施例也是可能的。
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