Abstract:
노광 장치의 정렬 방법, 이를 이용한 감광막의 노광 방법 및 감광막의 노광 방법을 수행하기 위한 노광 장치에서, 현미경 및 노광 헤드는 베이스에 대해 고정되며, 스테이지는 베이스에 대해 움직인다. 제1 방향으로 직렬 배열된 복수의 기준 마스크의 기준 마크가 스테이지에 의해 현미경의 중심점에 일치하도록 이송된다. 현미경의 중심점들 중 하나에는 원점이 부여되며, 나머지 중심점들에는 중심점 좌표들이 부여된다. 기준 마스크의 빔 위치 검출 마크로 노광 헤드들의 빔 좌표를 검출하며, 현미경의 화상을 통해 피처리 기판의 기판 좌표가 연산된다. 노광 점들은 화상 데이터에 따라 선택적으로 온 및 오프되어 노광 빔들을 피처리 기판에 스캔한다. 좌표 정렬이 쉽고 정확해지며, 장치의 대형화에 부합할 수 있다. 노광, 디지털, 좌표, 정렬, 대형화
Abstract:
PURPOSE: After mixing a part among a plurality of exposure data and being created new exposure data, the compression method of exposure data and exposure apparatus is compressed. The compression efficiency of exposure data can be improved. CONSTITUTION: Image data is transformed to a plurality of exposure data. A part is mixed among a plurality of exposure data and new exposure data becomes. The new exposure data as described above is compacted. The input unit(60) inputs image data changing the image of two dimension into the bitmap form to the MICOM(Microcomputer)(70). MICOM controls the overall operation of the exposure apparatus.
Abstract:
PURPOSE: A maskless exposure device and a method for measuring straightness are provided to implement repeatability and reproducibility by measuring the final exposure straightness. CONSTITUTION: A stage(18) moves a substrate. An optical unit(24) generates a plurality of beams irradiated to the substrate. The optical unit irradiates the plurality of beams in a vertical direction to the stage. The optical unit modulates the emitted beam according to a pattern and irradiates the modulated optical beam to an exposure surface. The controller measures the straightness of the stage by exposing the plurality of beams to the exposure surface of the substrate while moving the stage.
Abstract:
An apparatus for inspecting defects is provided to simplify the structure of a defect inspection apparatus by installing an illumination apparatus for generating a transmission light image in a manner that the illumination apparatus transfers together with a stage. A stage(20) transfers an object to be inspected to a desired position. A holder(30) has a support unit on which the inspected object is mounted, transfers together with the stage. An optical microscope(40) has a light source for irradiating light to the upper surface of the inspected object mounted on the holder. An illumination apparatus(80) irradiates light to the lower surface of the inspected object mounted on the holder, transferring together with the stage. An electron microscope(50) irradiates an electron beam to the inspected object mounted on the holder to generate an image. The illumination apparatus can be formed of a plate type so that light is irradiated to the entire region of the lower surface of the inspected object.
Abstract:
A semiconductor manufacturing apparatus is provided to simplify configuration by serving a sub-chamber as a load lock chamber and transfer chamber at the same time. A semiconductor manufacturing apparatus includes a main chamber(1) and a sub-chamber(2). The main chamber is maintained in vacuum. The sub-chamber is selectively connected to external space and the main chamber so as to convey substrates into the main chamber. By receiving the vacuum from the main chamber, the sub-chamber is decompressed to vacuum corresponding to the main chamber. The sub-chamber includes a robot, which carries the substrates between the sub-chamber and the main chamber.
Abstract:
본 발명은, 검사장치 및 그 방법에 관한 것으로서, 본 발명에 따른 검사장치는, 작업물을 지지하는 스테이지와; 상기 스테이지에 접근 이격 가능하게 마련되며, 상기 작업물을 검사하는 대물렌즈를 갖는 광학현미경과; 소정의 곡률반경을 가지며 상기 작업물과 상기 대물렌즈 사이에 설치된 뷰포트렌즈를 포함하는 것을 특징으로 한다. 이에 의하여, 비교적 선명한 화상을 얻을 수 있으며, 검사시 정확한 위치정보 및 데이터를 얻을 수 있다.
Abstract:
본 발명은 플라즈마 공정장비의 뷰포트 구조에 관한 것으로, 챔버 벽면에서 접지의 연속성을 확보하여 공정의 균일성을 향상시키기 위한 것이다. 본 발명에 따른 플라즈마 공정장비의 뷰포트(200)에는 챔버 벽면(100)에 전기적으로 접속되어 있는 그라운드 커버(230)가 구비되고, 이 그라운드 커버(230)는 챔버 벽면(100)과 접촉하는 면이 베어면(231a,231b)으로 구성되어 있다. 따라서 뷰포트(200) 근방에서 접지의 연속성이 유지되고, 챔버(100) 내부의 전기장 및 플라즈마 분포가 균일하게 된다. 플라즈마 공정장비, 뷰포트, 접지
Abstract:
PURPOSE: An etching apparatus is provided to control a density, a deposition rate, an etch rate and uniformity of plasma by adjusting a gas density and gas speed on a wafer in a chamber. CONSTITUTION: A gas supply part(22) has at least a pair of gas supply holes. At least one gas distribution part(2) is separated from the gas supply part by an isolated space, including an upper partition wall and a lower partition wall. The upper partition wall is of a loop type, protruding from the center region of the upper plate of the gas distribution part. The lower partition wall is of a loop type, protruding from the center region of the lower plate of the gas distribution part. A shower head injects process gas into a chamber(1), separated from the gas distribution part by an isolated space.
Abstract:
PURPOSE: A beam location measuring apparatus using a beam extension device, and a method thereof are provided to maintain intervals among each beam for increasing the number of beams to be measured. CONSTITUTION: A beam location measuring method comprises the following steps: passing a beam generated from a beam generator through a beam extension device for radiating the beam with the extended area to a bean measuring sensor(200,202); measuring the intensity of the beam radiated to each pixel of the bean measuring sensor(204); and calculating the central location of the beam(206). A beam location measuring apparatus includes the beam generator, the bean measuring sensor, and the beam extension device.