公开(公告)号：KR1020100083917A

公开(公告)日：2010-07-23

申请号：KR1020090003247

申请日：2009-01-15

Applicant: 삼성전자주식회사

Inventor： 정경석 ,  이재봉 ,  한경현 ,  신한수

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/205

CPC classification number: H01J37/32449 ,  H01L21/67069

Abstract: PURPOSE: A gas supply system for a plasma etching apparatus is provided to effectively regulate the uniformity of an etching operation using separate distributors according to the characteristics of processing gases. CONSTITUTION: A processing gas is injected into a chamber trough a gas inlet. The gas inlet includes a first gas inlet(20) and a second gas inlet(21). A supplying line(33) includes a first supplying line(33a) and a second supplying line(33b). A plurality of distributors obtains the processing gas from the supplying line and distributes the processing gas. The processing gas flows from the distributor to the gas inlet through a flowing path(36).

Abstract translation: 目的：提供一种用于等离子体蚀刻装置的气体供应系统，以根据处理气体的特性有效地调节使用分开的分配器的蚀刻操作的均匀性。 构成：处理气体通过气体入口注入室内。 气体入口包括第一气体入口（20）和第二气体入口（21）。 供给线（33）包括第一供给线（33a）和第二供给线（33b）。 多个分配器从供应管路获得处理气体并分配处理气体。 处理气体通过流动路径（36）从分配器流到气体入口。

公开(公告)号：KR100867123B1

公开(公告)日：2008-11-06

申请号：KR1020070033006

申请日：2007-04-03

Applicant: 삼성전자주식회사

Inventor： 성덕용 ,  권태용 ,  한경현 ,  임경춘 ,  정상민

IPC: H01L21/027

CPC classification number: H01L21/31144

Abstract: 본 발명은 반도체소자의 식각방법에 관한 것으로, 특히 본 발명은 플루오르를 함유하지 않은 선구가스를 이용하여 포토레지스트 상에 보호막으로서 탄화수소막을 형성함으로써 점점 얇아지고 있는 포토레지스트에 대해서도 포토레지스트에 대한 높은 선택비를 가지는 식각 공정을 진행할 수 있어 식각 효율을 향상시킨다.
이를 위해 본 발명은 물질막 상에 포토레지스트막이 형성된 반도체 기판을 챔버에 넣고, 챔버에 플루오르를 함유하지 않는 선구가스를 주입하여 상기 포토레지스트막 상에 탄화수소막을 형성하고, 챔버에 식각가스를 주입하여 식각대상물질을 식각하는 것을 특징으로 한다.

公开(公告)号：KR1020080090044A

公开(公告)日：2008-10-08

申请号：KR1020070033006

申请日：2007-04-03

Applicant: 삼성전자주식회사

Inventor： 성덕용 ,  권태용 ,  한경현 ,  임경춘 ,  정상민

IPC: H01L21/027

CPC classification number: H01L21/31144 ,  H01L21/0273 ,  G03F7/11

Abstract: An etching method for a semiconductor device is provided to form a hydrocarbon membrane or a phosphorous-containing hydrocarbon membrane as a protective membrane on a photo-resist membrane by using a precursor gas not including fluorine, thereby performing an etching process with high PR(Photo-Resist) selectivity. An etching method for a semiconductor device comprises the following steps of: inserting a semiconductor substrate where a photo-resist membrane is formed on a material membrane into a chamber; forming a hydrocarbon membrane on the photo-resist membrane by injecting precursor gas not containing fluorine into the chamber; and etching a material to be etched by injecting etching gas into the chamber.

Abstract translation: 提供半导体器件的蚀刻方法，通过使用不含氟的前体气体在光致抗蚀剂膜上形成作为保护膜的烃膜或含磷烃膜，从而进行高PR（Photo -Resist）选择性。 半导体器件的蚀刻方法包括以下步骤：将在其上形成有光致抗蚀剂膜的半导体衬底插入到腔室中; 通过将不含氟的前体气体注入到所述室中在所述光致抗蚀剂膜上形成烃膜; 并通过将蚀刻气体注入到腔室中来蚀刻待蚀刻的材料。

公开(公告)号：KR100733080B1

公开(公告)日：2007-06-29

申请号：KR1020060000414

申请日：2006-01-03

Applicant: 삼성전자주식회사

Inventor： 권태용 ,  한경현 ,  손길수

IPC: H01L21/3065

Abstract: An etching apparatus is provided to improve the productivity and reduce the cost necessary for the apparatus by removing effectively polymers from a wafer support unit using a main electrode and an auxiliary electrode. An etch apparatus(1) includes a wafer support unit(410) for supporting a wafer(W) and a plate type main electrode(411) for making the wafer adsorbed onto the wafer support unit. The etch apparatus further includes an auxiliary electrode and a power source. The auxiliary electrode(413) is buried in the wafer support unit. The auxiliary electrode is installed along a periphery of the main electrode. The power source(415) is used for applying discretely corresponding power sources to the main and auxiliary electrodes, so that polymers are removed from a sidewall of the wafer support unit.

Abstract translation: 提供一种蚀刻设备，通过使用主电极和辅助电极有效地从晶片支撑单元去除聚合物，从而提高生产率并降低设备所需的成本。 蚀刻装置（1）包括用于支撑晶片（W）的晶片支撑单元（410）和用于使晶片吸附到晶片支撑单元上的板型主电极（411）。 蚀刻设备还包括辅助电极和电源。 辅助电极（413）埋入晶片支撑单元中。 辅助电极沿着主电极的周边安装。 电源（415）用于将离散对应的电源施加到主电极和辅助电极，使得聚合物从晶片支撑单元的侧壁移除。

公开(公告)号：KR101519024B1

公开(公告)日：2015-05-12

申请号：KR1020090003247

申请日：2009-01-15

Applicant: 삼성전자주식회사

Inventor： 정경석 ,  이재봉 ,  한경현 ,  신한수

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/205

Abstract: 본 발명은 플라즈마 식각 장치의 가스공급장치에 관한 것으로서, 특히 기판이 처리되는 챔버에 공급되는 공정가스의 특성에 따라 별도의 분배기를 사용함으로써 효과적인 식각 균일도 조절이 가능한 플라즈마 식각 장치의 가스공급장치에 관한 것이다.

公开(公告)号：KR1020080111801A

公开(公告)日：2008-12-24

申请号：KR1020070060206

申请日：2007-06-20

Applicant: 삼성전자주식회사

Inventor： 한경현 ,  바실리파쉬코프스키 ,  성덕용 ,  정상민 ,  이상호

IPC: H01L21/3065 ,  H01L21/205

CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/32165

Abstract: A plasma processing apparatus and method thereof are provided to maintain plasma density uniformly as the phase difference of the high frequency power is controlled with considering phase difference which is generated while high frequency power moves to top and bottom electrodes within a chamber. A plasma processing apparatus comprises a chamber(100), top and bottom electrodes(130,140), a high frequency power supply(200), and phase shifters(300,600). The chamber generates plasma and processes a semiconductor substrate. The top and bottom electrodes are arranged within the chamber. The high frequency power supply supplies high frequency power to the top and bottom electrodes. The phase shifter controls the phase difference of the high frequency power supplied to the top and bottom electrodes.

Abstract translation: 提供了一种等离子体处理装置及其方法，以通过考虑在高频功率移动到室内的顶部和底部电极时产生的相位差来控制高频功率的相位差来均匀地保持等离子体密度。 等离子体处理装置包括室（100），顶部和底部电极（130,140），高频电源（200）和移相器（300,600）。 腔室产生等离子体并处理半导体衬底。 顶部和底部电极布置在腔室内。 高频电源为顶部和底部电极提供高频电源。 移相器控制提供给顶部和底部电极的高频功率的相位差。

公开(公告)号：KR1020140101996A

公开(公告)日：2014-08-21

申请号：KR1020130015331

申请日：2013-02-13

Applicant: 삼성전자주식회사

Inventor： 김태곤 ,  한경현 ,  전윤광

IPC: H01L21/683 ,  H01L21/3065

CPC classification number: H01L21/68735 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32642

Abstract: A substrate supporting unit and a plasma etching device having the same are disclosed. The substrate supporting unit according to an embodiment of the present invention comprises a substrate supporting unit in the processing chamber where etching of a substrate using a plasma takes place, and supporting the substrate; a cathode provided in the lower part of the substrate supporting unit; and a focus ring making the electric field even on the substrate by being provided at the edges of the substrate. The cathode comprises a top surface which is smaller than the substrate and provided at the lower part of the substrate supporting unit; and a stepped part which is formed in steps from the edges of the top surface downward. The focus ring is mounted in the stepped part and covers the sides of the stepped part and the edges of the substrate.

Abstract translation: 公开了一种基板支撑单元和具有该基板支撑单元的等离子体蚀刻装置。 根据本发明实施例的基板支撑单元包括处理室中的基板支撑单元，其中使用等离子体进行基板的蚀刻并支撑基板; 阴极，设置在基板支撑单元的下部; 以及通过设置在基板的边缘处甚至在基板上产生电场的聚焦环。 阴极包括比衬底小的并且设置在衬底支撑单元的下部的顶表面; 以及从顶面的边缘向下形成的阶梯部。 聚焦环安装在阶梯部分中并且覆盖台阶部分的侧面和基板的边缘。

公开(公告)号：KR100782373B1

公开(公告)日：2007-12-07

申请号：KR1020060067586

申请日：2006-07-19

Applicant: 삼성전자주식회사

Inventor： 이진석 ,  김명운 ,  이영희 ,  한경현

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/32422

Abstract: Plasma process equipment using neutral beam is provided to uniformly etch a thin film deposited on a wafer by extending the diameter of a hollow formed at an edge of a grid or increasing the number of the hollows. A wafer chuck is arranged in a chamber. A wafer to be etched is received on the wafer chuck. A gas supplying unit supplies source gas into the chamber. A coil antenna is prepared on an upper portion of the chamber to generate plasma using the source gas supplied into the chamber. Plural hollows(155) are formed on a grid(150) to extract ion from the plasma in the chamber. A reflective body changes the ion extracted by the grid into a neutral beam. A hollow(157) formed at an edge out of the hollows formed on the grid has a larger diameter than a hollow(156) formed at a central part of the grid.

Abstract translation: 提供使用中性束的等离子体处理设备，以通过延长形成在栅格边缘处的中空的直径或增加中空部的数量来均匀地蚀刻沉积在晶片上的薄膜。 晶片卡盘布置在腔室中。 要蚀刻的晶片被接收在晶片卡盘上。 气体供给单元将源气体供应到室中。 在室的上部准备线圈天线，以使用供应到室中的源气体产生等离子体。 在栅格（150）上形成多个空腔（155）以从腔室中的等离子体中提取离子。 反射体将由网格提取的离子变为中性光束。 形成在形成在栅格上的中空部分的边缘处的中空部分（157）的直径大于形成在网格的中心部分处的中空部分（156）。