公开(公告)号：KR101935363B1

公开(公告)日：2019-01-04

申请号：KR1020120075179

申请日：2012-07-10

Applicant: 삼성전자주식회사

Inventor： 류영균 ,  이석수 ,  이동준 ,  이명진 ,  정인선

IPC: H01M10/0566 ,  H01M10/0568 ,  H01M10/05 ,  H01M4/36

公开(公告)号：KR101751482B1

公开(公告)日：2017-06-29

申请号：KR1020110020462

申请日：2011-03-08

Applicant: 삼성전자주식회사

Inventor： 김영필 ,  이형익 ,  전우성 ,  김기홍 ,  원정연 ,  정인선

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L27/1052 ,  H01L21/76224 ,  H01L27/10876

Abstract: 기판의일부를제거하여소자분리트렌치를형성하고, 상기소자분리트렌치의내부표면상에제1 라이너를형성하고, 상기제1 라이너상에제2 라이너를형성하고, 상기제2 라이너상에상기소자분리트렌치를채우도록소자절연물질을형성하여상기기판내에활성영역을한정하는소자분리영역을형성하고, 상기기판내에예비게이트트렌치를형성하되, 상기예비게이트트렌치는, 상기소자분리영역을가로지르며상기제1 라이너, 제2 라이너및 상기소자절연물질을노출시키는제1 영역, 및상기활성영역을가로지르며상기기판의일부를노출시키는제2 영역을포함하되, 상기제1 영역은평면형제1 측벽을갖고, 상기제2 영역은상기제1 영역과의경계부에첨부를갖도록중앙영역이오목한제2 측벽을갖고, 상기제1 영역에노출된상기제1 라이너의일부를제거하여상기첨부를돌출시키는제1 깊이의덴트를형성하고, 상기돌출한첨부를리플로우공정을이용하여제거하여상기예비게이트트렌치를게이트트렌치로변환하고, 및상기게이트트렌치내에게이트절연막, 게이트도전패턴, 및게이트캡핑패턴을형성하는것을포함하는반도체소자의제조방법이설명된다.

公开(公告)号：KR1020120102355A

公开(公告)日：2012-09-18

申请号：KR1020110020462

申请日：2011-03-08

Applicant: 삼성전자주식회사

Inventor： 김영필 ,  이형익 ,  전우성 ,  김기홍 ,  원정연 ,  정인선

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L27/1052 ,  H01L21/76224 ,  H01L27/10876 ,  H01L29/4236

Abstract: PURPOSE: A method for manufacturing a semiconductor device including a recess channel is provided to improve a gate driving capacity by increasing the width of a channel. CONSTITUTION: A device isolation trench(102) is formed by removing a part of a substrate. A first liner(110a) is formed on the inner surface of the device isolation trench. A second liner(110b) is formed on the fist liner. A device isolation region(130) is formed on the substrate to limit an active region(120). A preliminary gate trench is formed on the substrate and includes a first region(160a) and a second region(160b).

Abstract translation: 目的：提供一种制造包括凹槽通道的半导体器件的方法，以通过增加通道的宽度来提高栅极驱动能力。 构成：通过去除衬底的一部分来形成器件隔离沟槽（102）。 第一衬垫（110a）形成在器件隔离沟槽的内表面上。 在第一衬垫上形成第二衬垫（110b）。 器件隔离区（130）形成在衬底上以限制有源区（120）。 初步栅极沟槽形成在衬底上，并包括第一区域（160a）和第二区域（160b）。

公开(公告)号：KR100457416B1

公开(公告)日：2004-11-18

申请号：KR1020010067901

申请日：2001-11-01

Applicant: 삼성전자주식회사 ,  한국화학연구원

Inventor： 이병노 ,  정인선 ,  장은주 ,  이정호 ,  김형록 ,  한요한

IPC: C07C29/141

CPC classification number: B01J23/8892 ,  B01J21/08 ,  B01J23/72 ,  B01J37/0009 ,  B01J37/03 ,  B01J37/18 ,  C07C29/149 ,  C07C31/205

Abstract: A process for preparing a 1,3-alkandiol from a 3-hydroxyester, comprising the steps of: i) preparing a catalyst through adding an alkaline precipitator to an aqueous copper salt solution to form copper hydroxide particles and ageing the particles following the addition of a colloidal silica thereto; ii) activating the catalyst through reduction with H2 gas or H2/N2 mixed gas applying a pressure of 5 to 2000 psig at a temperature of 100 to 250 DEG C in the presence of an activation solvent; and iii) hydrogenating a 3-hydroxyester in a liquid phase slurry manner with H2 gas or H2/N2 mixed gas applying a pressure of 50 to 3000 psig at a temperature of 100 to 250 DEG C in the presence of the activated catalyst and a reaction solvent is disclosed. By virtue of the present invention, a 1,3-alkanediol can be selectively prepared from a 3-hydroxyester in a high yield.

Abstract translation: 一种由3-羟基酯制备1,3-链烷二醇的方法，包括以下步骤：i）通过将碱性沉淀剂加入到铜盐水溶液中以形成氢氧化铜颗粒并在加入 向其中加入胶态二氧化硅; ⅱ）在100-250℃的温度下，在活化溶剂存在下，用H2气或H2 / N2混合气在5-2000psig的压力下还原活化催化剂; 和iii）在100-250℃的温度下，在活化的催化剂存在下，用H 2气或H 2 / N 2混合气体以50-3000psig的压力，以液相淤浆方式氢化3-羟基酯， 披露了溶剂。 根据本发明，1,3-链烷二醇可以从3-羟基酯以高产率选择性地制备。

公开(公告)号：KR1020010077977A

公开(公告)日：2001-08-20

申请号：KR1020010001784

申请日：2001-01-12

Applicant: 삼성전자주식회사

Inventor： 이병노 ,  장은주 ,  정인선 ,  정택성 ,  조형수

IPC: C07C29/147

Abstract: PURPOSE: Provided is a method of preparing 1,3-alkanediol from epoxide derivatives in good yield through hydroxy esterification with special catalyst and hydrogenation of this compound. The intermediate, 3-hydroxyester has 2 functional groups and has many use as resin, coating material and starting material for drugs. CONSTITUTION: The preparative method includes: reacting epoxide, carbon monoxide and alcohol at 30-50 deg.C under 50-3000psig pressure with catalytic amount of cobalt and effective amount of accelerator to obtain 3-hydroxyester in 5-95wt.% yield; separating the resultant from catalyst and accelerator; hydrogenating the products with hydrogen and catalyst at 30-350 deg.C under 50-5000psig to get 1,3-alkanediol and the mixture and recovering 1,3-alkanediol from the reaction mixture. The process is characterized in that as accelerator to make 3-hydroxyester, it uses imidazole derivatives represented in chemical formula 1 where R12, R15, R16, and R17 are independently hydrogen. C1-C10 branched and straight chain aliphatic hydrocarbon, saturated cyclic hydrocarbon, branched cyclic hydrocarbon, aliphatic hydrocarbon with cyclic aromatic hydrocarbon, F, Cl, C1-C3 carbon alkoxy, oh, C1-C10 branched aliphatic hydrocarbon with OH group, straight aliphatic hydrocarbon with OH group, saturated cyclic hydrocarbon with OH, branched cyclic hydrocarbon with OH, and aliphatic hydrocarbon with OH and aromatic cyclic compound.

Abstract translation: 目的：提供一种以环氧化物衍生物制备1,3-链烷二醇的方法，通过用特殊催化剂的羟基酯化和该化合物的氢化，产率良好。 中间体3-羟基酯具有2个官能团，作为树脂，涂料和药物原料有许多用途。 构成：制备方法包括：在30〜50℃，50-3000psig压力下使环氧化物，一氧化碳和醇反应，加入催化量的钴和有效量的促进剂，得到3-羟基酯，产率为5-95wt％; 将所得物与催化剂和促进剂分离; 用氢气和催化剂在30-350℃，50-5000psig下氢化产物得到1,3-链烷二醇，并从反应混合物中回收1,3-链烷二醇。 该方法的特征在于，作为制备3-羟基酯的促进剂，它使用化学式1表示的咪唑衍生物，其中R 12，R 15，R 16和R 17独立地是氢。 C1-C10支链和直链脂族烃，饱和环烃，支链环烃，脂环烃与环芳烃，F，Cl，C1-C3碳烷氧基，噢，具有OH基的C1-C10支链脂族烃，直链脂肪烃 具有OH基，具有OH的饱和环烃，具有OH的支链环烃，和具有OH和脂族烃与芳族环状化合物。

公开(公告)号：KR1020170111187A

公开(公告)日：2017-10-12

申请号：KR1020160036122

申请日：2016-03-25

Applicant: 삼성전자주식회사

Inventor： 정인선 ,  권혁재 ,  김목원 ,  김정화 ,  변선정 ,  유다은 ,  윤동진 ,  이향숙

IPC: H01M12/08 ,  H01M4/96 ,  H01M4/134

CPC classification number: H01M12/08 ,  H01M4/8605 ,  H01M4/8807 ,  H01M4/8875 ,  H01M4/8882 ,  H01M4/96 ,  H01M12/06 ,  H01M2004/8689 ,  Y02E60/128

Abstract: 금속-공기전지및 그제조방법에관해개시되어있다. 개시된금속-공기전지는반용매침전법(anti-solvent precipitation method)을이용해서형성한환원된그래핀산화물(reduced graphene oxide)로구성된다공성층을포함할수 있다. 상기다공성층은비적층형환원그래핀산화물(non-stacking type reduced graphene oxide)일수 있다. 상기다공성층은바인더-프리(binder-free) 물질층일수 있다. 상기다공성층은금속-공기전지의양극부에적용될수 있다. 예컨대, 상기다공성층은금속-공기전지의양극층(양극촉매층) 및가스확산층중 적어도하나에적용될수 있다.

Abstract translation: 公开了一种金属 - 空气电池及其制造方法。 所公开的金属空气电池可以包括由使用反溶剂沉淀法形​​成的还原氧化石墨烯组成的多孔层。 多孔层可以是非堆叠型还原氧化石墨烯。 多孔层可以是不含粘合剂的材料层。 多孔层可以被施加到金属 - 空气电池的阳极部分。 例如，多孔层可以应用于金属 - 空气电池的阳极层（阳极催化剂层）和气体扩散层中的至少一个。

公开(公告)号：KR1020100090091A

公开(公告)日：2010-08-13

申请号：KR1020090009378

申请日：2009-02-05

Applicant: 삼성전자주식회사

Inventor： 김진범 ,  신유균 ,  원정연 ,  정인선 ,  이준호

IPC: H01L29/78 ,  H01L29/94 ,  H01L21/336

CPC classification number: H01L21/823814 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/2855 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/665 ,  H01L29/66636 ,  H01L2924/0002 ,  H01L29/41725 ,  H01L2924/00

Abstract: PURPOSE: A method for manufacturing a semiconductor device with a metal-semiconductor compound region is provided to reduce a contact resistance of source and drain regions of a transistor by forming a metal-semiconductor compound region using a semiconductor element source layer like a silicon layer formed on the source and drain regions of the transistor. CONSTITUTION: A semiconductor substrate(1) has a first device region(A) and a second device region(B). A first transistor(TR1) is formed on the first device region of the semiconductor substrate. The first transistor is formed on the upper sides of a first source and drain region and a channel region between the first source and drain regions. An insulation layer(27,30) is formed on the semiconductor substrate including the first transistor. A first opening(33a) exposes the part of the first source and drain region by patterning the insulation layer. A first semiconductor element source layer(42a,42b) is formed on the first source and drain region exposed by the first opening and the upper side of the insulation layer adjacent to the first opening unit. A metal device source layer(55a,55b,55c) is formed on the semiconductor substrate including the first semiconductor element source layer. First and second metal-semiconductor compound regions are formed with a silicide heat process. The first metal-semiconductor region is formed on the first source and drain regions. The second metal-semiconductor compound region is formed on the upper side of the insulation layer adjacent to the first opening.

Abstract translation: 目的：提供一种用于制造具有金属 - 半导体化合物区域的半导体器件的方法，以通过使用形成的硅层的半导体元件源层形成金属 - 半导体化合物区域来降低晶体管的源极和漏极区域的接触电阻 在晶体管的源极和漏极区域上。 构成：半导体衬底（1）具有第一器件区域（A）和第二器件区域（B）。 第一晶体管（TR1）形成在半导体衬底的第一器件区域上。 第一晶体管形成在第一源极和漏极区域的上侧以及在第一源极和漏极区域之间的沟道区域。 在包括第一晶体管的半导体衬底上形成绝缘层（27,30）。 通过图案化绝缘层，第一开口（33a）暴露第一源极和漏极区的一部分。 第一半导体元件源层（42a，42b）形成在由第一开口和与第一开口单元相邻的绝缘层的上侧暴露的第一源极和漏极区域上。 在包括第一半导体元件源层的半导体衬底上形成金属器件源极层（55a，55b，55c）。 第一和第二金属 - 半导体化合物区域由硅化物热处理形成。 第一金属 - 半导体区域形成在第一源区和漏区上。 第二金属 - 半导体化合物区域形成在与第一开口相邻的绝缘层的上侧。

公开(公告)号：KR100440872B1

公开(公告)日：2004-07-19

申请号：KR1020010001784

申请日：2001-01-12

Applicant: 삼성전자주식회사

Inventor： 이병노 ,  장은주 ,  정인선 ,  정택성 ,  조형수

IPC: C07C29/147

Abstract: PURPOSE: Provided is a method of preparing 1,3-alkanediol from epoxide derivatives in good yield through hydroxy esterification with special catalyst and hydrogenation of this compound. The intermediate, 3-hydroxyester has 2 functional groups and has many use as resin, coating material and starting material for drugs. CONSTITUTION: The preparative method includes: reacting epoxide, carbon monoxide and alcohol at 30-50 deg.C under 50-3000psig pressure with catalytic amount of cobalt and effective amount of accelerator to obtain 3-hydroxyester in 5-95wt.% yield; separating the resultant from catalyst and accelerator; hydrogenating the products with hydrogen and catalyst at 30-350 deg.C under 50-5000psig to get 1,3-alkanediol and the mixture and recovering 1,3-alkanediol from the reaction mixture. The process is characterized in that as accelerator to make 3-hydroxyester, it uses imidazole derivatives represented in chemical formula 1 where R12, R15, R16, and R17 are independently hydrogen. C1-C10 branched and straight chain aliphatic hydrocarbon, saturated cyclic hydrocarbon, branched cyclic hydrocarbon, aliphatic hydrocarbon with cyclic aromatic hydrocarbon, F, Cl, C1-C3 carbon alkoxy, oh, C1-C10 branched aliphatic hydrocarbon with OH group, straight aliphatic hydrocarbon with OH group, saturated cyclic hydrocarbon with OH, branched cyclic hydrocarbon with OH, and aliphatic hydrocarbon with OH and aromatic cyclic compound.

Abstract translation: 目的：提供一种通过用特殊催化剂进行羟基酯化并氢化该化合物而由环氧化物衍生物以良好收率制备1,3-链烷二醇的方法。 中间体3-羟基酯具有2个官能团，并且作为药物的树脂，涂料和起始材料有许多用途。 本发明的制备方法包括：在30〜50℃，50〜3000psig压力下，用催化剂量的钴和有效量的促进剂使环氧化物，一氧化碳和醇反应，得到3-羟基酯，产率为5-95wt％ 从催化剂和促进剂中分离所得物; 用氢和催化剂在30-350℃和50-5000psig下加氢产物，得到1,3-链烷二醇和混合物，并从反应混合物中回收1,3-链烷二醇。 该方法的特征在于，作为制备3-羟基酯的促进剂，其使用化学式1所示的咪唑衍生物，其中R 12，R 15，R 16和R 17独立地为氢。 C1-C10支链和直链脂族烃，饱和环烃，支链环烃，具有环芳族烃的脂族烃，F，Cl，C1-C3碳烷氧基，OH，具有OH基的C1-C10支链脂族烃， 与OH基团，与OH的饱和环状烃，与OH的支链环状烃，以及与OH和芳香环状化合物的脂族烃。

公开(公告)号：KR1020020000030A

公开(公告)日：2002-01-04

申请号：KR1020000033908

申请日：2000-06-20

Applicant: 삼성전자주식회사

Inventor： 이병노 ,  정인선

IPC: C07C51/12

Abstract: PURPOSE: A method for preparing 3-hydroxypropionic acid or its salt from an epoxide derivative is provided, to improve the production yield by using the catalysis system with high activity and selectivity, comprising a cobalt catalyst and an accelerating agent. CONSTITUTION: The method comprises the steps of reacting an epoxide, CO and an alcohol in solvent by using a catalytic amount of a cobalt compound and an accelerating agent at a temperature of 30-150 deg.C and a pressure of 50-3,000 psig, to prepare β-hydroxyester and its derivatives; separating the product and a solvent from the catalyst and the accelerating agent; and hydrolyzing the separated product in the presence of an acid or a base to obtain 3-hydroxypropionic acid. Preferably the accelerating agent is an imidazole derivative. The acid or the base is dipped into a solid supporter comprising charcoal and silica, and the hydrolysis is carried out under the nitrogen, argon or air atmosphere at a temperature of 20-110 deg.C.

Abstract translation: 目的：提供从环氧化物衍生物制备3-羟基丙酸或其盐的方法，通过使用包含钴催化剂和促进剂的高活性和选择性的催化体系来提高产率。 方案：该方法包括以下步骤：在30-150℃的温度和50-3000psig的压力下，使用催化量的钴化合物和促进剂使溶剂中的环氧化物和醇反应， 制备β-羟基酯及其衍生物; 从催化剂和促进剂中分离产物和溶剂; 并在酸或碱的存在下水解分离的产物，得到3-羟基丙酸。 优选地，促进剂是咪唑衍生物。 将酸或碱浸入包含活性炭和二氧化硅的固体支持物中，水解在氮气，氩气或空气气氛下在20-110℃的温度下进行。

公开(公告)号：KR1020020000029A

公开(公告)日：2002-01-04

申请号：KR1020000033905

申请日：2000-06-20

Applicant: 삼성전자주식회사

Inventor： 이병노 ,  정인선

IPC: C07C67/36

CPC classification number: C07C67/313 ,  C07C67/37 ,  C07C69/38 ,  C07C69/716 ,  C07C69/675

Abstract: PURPOSE: A method for preparing malonic acid monoester, β-ketoester or malonate derivative is provided, to improve the production yield by using the catalysis system comprising a cobalt catalyst and an accelerating agent. CONSTITUTION: The method comprises the steps of reacting an epoxide, CO and an alcohol by using a catalytic amount of a cobalt compound and an accelerating agent at a temperature of 30-150 deg.C and a pressure of 50-3,000 psig, to prepare β-hydroxyester and its derivatives; separating the product and a solvent from the catalyst and the accelerating agent; and reacting the separated product and the solvent with oxygen or oxygen-containing air in the presence of an oxidation catalyst and an accelerating agent at a temperature of 10-350 deg.C and a pressure of 5-3,000 psig to obtain malonic acid monoester or β-ketoester. A malonate derivative is prepared by reacting the obtained malonic acid monoester with an acid or a base in alcohol or distilled water. Preferably the accelerating agent is an imidazole derivative.

Abstract translation: 目的：提供制备丙二酸单酯，β-酮酯或丙二酸酯衍生物的方法，通过使用包含钴催化剂和促进剂的催化体系来提高产量。 方案：该方法包括以下步骤：使用催化量的钴化合物和促进剂，在30-150℃，压力为50-3000psig下使环氧化物，CO和醇反应，以制备 β-羟基酯及其衍生物; 从催化剂和促进剂中分离产物和溶剂; 并在氧化催化剂和促进剂存在下，在10-350℃和5-3000psig的压力下使分离产物和溶剂与氧或含氧空气反应，得到丙二酸单酯或 β-酮酯。 通过使得到的丙二酸单酯与酸或碱在醇或蒸馏水中反应来制备丙二酸酯衍生物。 优选地，促进剂是咪唑衍生物。