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公开(公告)号：KR1020080023061A
公开(公告)日：2008-03-12
申请号：KR1020060087064
申请日：2006-09-08
Applicant: 삼성전자주식회사
IPC: H01L21/3065
CPC classification number: H01J37/321 , H01J37/32091
Abstract: An apparatus and a method for generating plasma are provided to enhance an etch selectivity by supplying electrons having high temperatures to a main plasma generating space. An apparatus includes a chamber(1) having a plasma generating space. A lower electrode(3) is positioned within the chamber, and has a table for supporting a semiconductor substrate. An upper electrode(2) is positioned to face the lower electrode, and is disposed within the chamber to constitute a first plasma generating source together with the lower electrode. A second plasma generating source is positioned at a higher location than that of a lower surface of the upper electrode, and is disposed at an outer circumference of the upper electrode. A power supply supplies a power to the first and second plasma generating sources.
Abstract translation: 提供了一种用于产生等离子体的装置和方法，以通过向主等离子体产生空间提供具有高温的电子来增强蚀刻选择性。 一种装置包括具有等离子体产生空间的室（1）。 下电极（3）位于室内，并具有用于支撑半导体衬底的工作台。 上电极（2）定位成面向下电极，并且设置在室内以与下电极一起构成第一等离子体发生源。 第二等离子体发生源位于比上电极的下表面更高的位置，并且设置在上电极的外周。 电源为第一和第二等离子体发生源供电。
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公开(公告)号：KR1020140090779A
公开(公告)日：2014-07-18
申请号：KR1020130002807
申请日：2013-01-10
Applicant: 삼성전자주식회사
CPC classification number: H01J37/32183 , H01J37/321 , H01J37/32165 , H01L21/3065 , H01L21/67017 , H01L21/67069 , H05H1/24
Abstract: A method to operate a plasma processing apparatus includes the steps of: outputting a first RF power with a first duty ratio and a first frequency; and outputting a second RF power with a second duty ratio and a second frequency. The second frequency is higher than the first frequency. The second duty ratio is smaller than the first duty ratio. The output point of the first RF power is synchronized with the output point of the second RF power.
Abstract translation: 一种操作等离子体处理装置的方法包括以下步骤：输出具有第一占空比和第一频率的第一RF功率; 以及输出具有第二占空比和第二频率的第二RF功率。 第二频率高于第一频率。 第二占空比小于第一占空比。 第一RF功率的输出点与第二RF功率的输出点同步。
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公开(公告)号：KR1020080095503A
公开(公告)日：2008-10-29
申请号：KR1020070040061
申请日：2007-04-24
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: A system for measuring ion characteristics is provided to improve the reliability of measurement system by measuring an ion current and ion energy with a non-contact probe. A system for measuring ion characteristics comprises at least one electrode and a faraday cup(215); a vacuum chamber(210) for generating ion flux, including an ion collector and grid; a power supplier(220) for the vacuum chamber; a high voltage pulse power supplier(230) for the vacuum chamber; a non-contact probe(240) for measuring ion characteristics non-connected to the vacuum chamber and a host(260) for acquiring data of ion characteristics connected to the non-contact probe.
Abstract translation: 提供了一种用于测量离子特性的系统，通过用非接触探针测量离子电流和离子能量来提高测量系统的可靠性。 用于测量离子特性的系统包括至少一个电极和法拉第杯（215）; 用于产生离子通量的真空室（210），包括离子收集器和栅极; 用于真空室的电源（220）; 用于真空室的高压脉冲电源（230）; 用于测量不连接到真空室的离子特性的非接触探针（240）和用于获取连接到非接触式探头的离子特性的数据的主机（260）。
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公开(公告)号：KR1020080111801A
公开(公告)日：2008-12-24
申请号：KR1020070060206
申请日：2007-06-20
Applicant: 삼성전자주식회사
IPC: H01L21/3065 , H01L21/205
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/32165
Abstract: A plasma processing apparatus and method thereof are provided to maintain plasma density uniformly as the phase difference of the high frequency power is controlled with considering phase difference which is generated while high frequency power moves to top and bottom electrodes within a chamber. A plasma processing apparatus comprises a chamber(100), top and bottom electrodes(130,140), a high frequency power supply(200), and phase shifters(300,600). The chamber generates plasma and processes a semiconductor substrate. The top and bottom electrodes are arranged within the chamber. The high frequency power supply supplies high frequency power to the top and bottom electrodes. The phase shifter controls the phase difference of the high frequency power supplied to the top and bottom electrodes.
Abstract translation: 提供了一种等离子体处理装置及其方法，以通过考虑在高频功率移动到室内的顶部和底部电极时产生的相位差来控制高频功率的相位差来均匀地保持等离子体密度。 等离子体处理装置包括室（100），顶部和底部电极（130,140），高频电源（200）和移相器（300,600）。 腔室产生等离子体并处理半导体衬底。 顶部和底部电极布置在腔室内。 高频电源为顶部和底部电极提供高频电源。 移相器控制提供给顶部和底部电极的高频功率的相位差。
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公开(公告)号：KR100855002B1
公开(公告)日：2008-08-28
申请号：KR1020070050132
申请日：2007-05-23
Applicant: 삼성전자주식회사
IPC: H01L21/265
CPC classification number: H01J37/32449 , H01J37/32357 , H01J37/32412 , H01J37/3244 , H01J37/3255 , H01J37/32862 , H01L21/2236
Abstract: A system for implanting plasma ions is provided to generate only the ions and polymer radicals necessary for an ion implantation process and easily control implanted plasma ions by generating plasma having an characteristic advantageous for an ion implantation process as compared with an ICP(inductively coupled plasma) process. A process target(501) is positioned in a vacuum chamber(500) having a reaction space in which plasma is generated. A first gas supply apparatus supplies reaction gas to the vacuum chamber. A second gas supply apparatus supplies cleaning gas to the vacuum chamber. Upper and lower electrodes(502,553) are installed in the vacuum chamber, confronting each other. A conductive ring(551) is installed in the periphery of the process target. An RF supply apparatus supplies RF power to the upper electrode to generate plasma. A high voltage supply apparatus supplies a high voltage to the process target, the lower electrode and the conductive ring. The first and second gas supply apparatuses can be installed in the sidewall(504) of the vacuum chamber, confronting each other.
Abstract translation: 提供了用于植入等离子体离子的系统，以仅产生离子注入工艺所需的离子和聚合物自由基，并且通过产生具有有利于离子注入工艺的特性的等离子体容易地控制注入的等离子体离子，与ICP（电感耦合等离子体）相比， 处理。 处理目标（501）位于具有产生等离子体的反应空间的真空室（500）中。 第一气体供给装置向真空室供给反应气体。 第二气体供给装置向真空室供给清洁气体。 上下电极（502,553）安装在真空室中，彼此面对。 导电环（551）安装在处理靶的周围。 RF供给装置向上部电极提供RF功率以产生等离子体。 高压电源装置向工艺靶，下电极和导电环提供高电压。 第一和第二气体供给装置可以安装在真空室的侧壁（504）中，彼此面对。
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Patent Agency Ranking
公开(公告)号：KR1020080010061A
公开(公告)日：2008-01-30
申请号：KR1020060070037
申请日：2006-07-25
Applicant: 삼성전자주식회사
IPC: H01L21/265 , H01L21/3065
CPC classification number: H01J37/321 , H01J37/32412
Abstract: An ion implanting apparatus using plasma is provided to stably generate plasma in the pressure condition of a large area by forming a ring-shaped first chamber and to reduce the generation of arching within a second chamber in an ion insertion process. An ion implanting apparatus using plasma includes a plasma generating unit(30), an ion implanting unit(20), and a conductor(23). The ion implanting unit implants the ion of plasma generated in the plasma generating unit in a sample. The conductor is placed in the ion implanting unit, and is grounded to prevent electric charge. The plasma generating unit includes a first chamber(35) which forms a space where the plasma is generated, a coil antenna(34) which is placed at one side of the first chamber and induces the plasma, and a power supply unit(37) which supplies energy to the coil antenna.
Abstract translation: 提供了使用等离子体的离子注入装置，通过形成环状的第一室，在大面积的压力条件下稳定地产生等离子体，并且在离子插入过程中减少第二室内的拱起的产生。 使用等离子体的离子注入装置包括等离子体产生单元（30），离子注入单元（20）和导体（23）。 离子注入单元将样品中等离子体产生单元中产生的等离子体的离子注入。 导体放置在离子注入单元中，并接地以防止电荷。 等离子体产生单元包括形成等离子体的空间的第一室（35），放置在第一室的一侧并引导等离子体的线圈天线（34），以及电源单元（37） 其向线圈天线供应能量。
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公开(公告)号：KR100845285B1
公开(公告)日：2008-07-09
申请号：KR1020060087064
申请日：2006-09-08
Applicant: 삼성전자주식회사
IPC: H01L21/3065
CPC classification number: H01J37/321 , H01J37/32091
Abstract: 본 발명은 용량 결합형 플라즈마 소스와 유도 결합형 플라즈마 소스가 혼합된 형태의 플라즈마 생성장치에 있어서 유도 전류 코일에 의한 방전이 플라즈마 생성영역에서 이루어지기 때문에 높은 전자 온도로 인하여 식각 선택비가 저하되는 뮨제점을 효과적으로 해결할 수 있는 플라즈마 생성장치 및 방법에 관한 것이다.
이를 위하여 본 발명은, 용량 결합형 플라즈마 소스가 구비된 플라즈마 생성장치에 플라즈마 생성공간과 소정 거리 이격된 위치에 유도 결합형 플라즈마 소스를 설치함으로써 발생되는 고온의 전자가 저온 상태로 상기 챔버의 플라즈마 생성공간으로 공급되도록 하여 식각 선택비를 높일 수 있다.-
公开(公告)号：KR100835355B1
公开(公告)日：2008-06-04
申请号：KR1020060070037
申请日：2006-07-25
Applicant: 삼성전자주식회사
IPC: H01L21/265 , H01L21/3065
CPC classification number: H01J37/321 , H01J37/32412
Abstract: 본 발명을 플라즈마를 이용한 이온주입장치에 관한 것이다.
본 발명에 따른 플라즈마를 이용한 이온주입장치는 플라즈마가 형성되는 제1챔버와, 상기 제1챔버의 플라즈마가 내부로 확산될 수 있도록 유입구가 형성되며 플라즈마의 이온이 시료에 주입되는 제2챔버와, 상기 제2챔버에 안착되는 시료와 대향되는 위치에 접지되어 마련된 전도체를 포함하며, 상기 제1챔버는 상기 제2챔버어 상부 테두리측에 소정폭의 환형으로 형성되어 상호 연통되어 이루어지고, 상기 제1챔버가 환형으로 형성되므로 넓은 영역의 압력조건에서 안정적인 플라즈마 발생이 가능하며, 제2챔버 내부로 확산된 플라즈마는 낮은 전자온도와 적정한 플라즈마 밀도를 가지기 때문에 이온주입공정에 적합한 플라즈마를 제공할 수 있는 효과가
있고, 웨이퍼에서 방출되는 2차 전자의 대전에 기인한 플라즈마 이온의 스퍼터링에 의한 오염현상을 방지할 수 있다.-
公开(公告)号：KR100782370B1
公开(公告)日：2007-12-07
申请号：KR1020060073711
申请日：2006-08-04
Applicant: 삼성전자주식회사
IPC: H01L21/00 , H01L21/3065
CPC classification number: H01L21/67069 , H01J37/32412 , H01J37/32422 , H01L21/67253
Abstract: An ion analyzing system based on an ion energy distribution analyzer using retarded electric fields is provided to measure an ion energy distribution function on a substrate surface at plural positions and to analyze a measured spectrum in a data collection system. An ion analyzer is formed in a reactive chamber to measure an ion energy distribution. The ion analyzer includes plural ion flux sensors. The ion flux sensor induces ion flux generated in the reactive chamber into the inside thereof and measure the ion energy distribution by the induced ion flux in real time. The ion flux sensor has a cylindrical body comprised of a base(221) and a wall(226). A hole(222) is formed in the base of the cylindrical body. Retarded potential is applied to grids(223,225). An ion collector(224) carries a current of ion passing through the grid. The grids and the collector are formed on nodes(228,229,230). The nodes are mounted on a socket(227) connected to a retarded voltage and a diagnosis cable.
Abstract translation: 提供了一种基于使用延迟电场的离子能量分布分析仪的离子分析系统，以测量多个位置的衬底表面上的离子能量分布函数，并分析数据采集系统中的测量光谱。 在反应室中形成离子分析器以测量离子能量分布。 离子分析仪包括多个离子通量传感器。 离子通量传感器将在反应室中产生的离子通量引入其内部，并通过实时的感应离子通量测量离子能量分布。 离子通量传感器具有由基部（221）和壁（226）组成的圆柱体。 在圆柱体的基部上形成孔（222）。 电网电压下降（223,225）。 离子收集器（224）承载通过栅格的离子电流。 网格和收集器形成在节点（228,229,230）上。 节点安装在连接到延迟电压的插座（227）和诊断电缆上。
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