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公开(公告)号：KR100703007B1
公开(公告)日：2007-04-06
申请号：KR1020050110044
申请日：2005-11-17
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
IPC: G03F7/027
Abstract: 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한 패턴 형성방법에서, 폴리머막 형성용 조성물은 에폭시기와 산 발생제(PGA)에 의해 분해가 일어나는 산 분해형 열 가교제 0.5 내지 5중량%와 안트라센을 함유하는 아크릴레이트 단량체 또는 안트라센을 함유하는 메타 아크릴레이트 단량체를 포함하는 공중합체 수지 10 내지 22중량%와 광산 발생제 0.1 내지 1중량% 및 여분의 용매를 포함하는 조성을 갖는다. 상기 폴리머막을 식각하여 폴리머막 패턴을 형성한다. 상기한 조성물은 포토레지스트 패턴을 형성하기 위한 현상공정을 수행할 때 함께 현상되는 감광성 유기 반사 방지막을 형성할 수 있다.
Abstract translation: 在组合物中的光敏有机防反射膜，并使用相同的用于形成聚合物层的形成，它包含0.5％至5％的酸可分解的热交联剂（重量）蒽的发生通过与环氧基如权利要求所产生的酸分解的丙烯酸类的组合物的图案形成方法（PGA） 它具有包括单体或甲基丙烯酸酯单体的共聚物树脂10〜22％（重量），0.1至1％（重量）的光酸产生剂和包含含有蒽多余的溶剂的组合物。 聚合物膜被蚀刻以形成聚合物膜图案。 上述组合物可形成光敏有机防反射膜，当进行形成光致抗蚀剂图案的显影工艺时，光敏有机防反射膜与光致抗蚀剂图案一起显影。
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公开(公告)号：KR100782133B1
公开(公告)日：2007-12-05
申请号：KR1020060105936
申请日：2006-10-30
Applicant: 재단법인서울대학교산학협력재단 , 한국원자력연구원
CPC classification number: B82B3/0038 , B01J19/085 , B82Y30/00 , B82Y40/00
Abstract: A production method of nano material by radiating electronic beam is provided to mass-produce nano material having uniform particle size distribution or having different form for each production. A production method of nano material comprises a step of radiating electronic beam onto an organic-inorganic monomer compound represented by a structure formula: wherein M is metal element, X is selected from a group consisting of S, P, O and N, and R is a substituted or unsubstituted alkyl group. The organic-inorganic compound is prepared by polymerizing a metallic salt or at least two metallic salt compounds with hydrocarbon having at least one functional group. The other production method of nano material comprises a step of radiating electronic beam onto an organic-inorganic mixture prepared by mixing metallic salt or at least two metallic salts and hydrocarbon substituted by at least one functional group having one selected from a group consisting of S, P, O and N. Both a hydrocarbon having at least one functional group and the other hydrocarbon substituted by at least one functional group are selected from a group consisting of C1-C20 alkanethiol having -SH group, alkane thiol derivatives and di-thiol and tri-diol derivatives, or from a group consisting of compounds having C1-C20 alkyl group having at least one functional group selected from -OH, -C6H5, -NO2, -COOH, -H3PO4. The metal is selected from a group consisting of Au, Ag, Cu, Pt, Zn, Ni, Co, Mo, Mn, W, Ca, Ge, Se, Fe, Al, Ti, Pd, In, Sn and Pb. The electronic beam is radiated directly onto the organic-inorganic polymer compound or onto the organic-inorganic mixture depending on the selected method with varing the energy strength and radiation time.
Abstract translation: 提供通过辐射电子束的纳米材料的制造方法，以批量生产具有均匀粒度分布或具有不同形式的纳米材料。 纳米材料的制备方法包括将电子束辐射到由以下结构式表示的有机 - 无机单体化合物的步骤：其中M是金属元素，X选自S，P，O和N，R 是取代或未取代的烷基。 通过使金属盐或至少两种金属盐化合物与具有至少一个官能团的烃聚合来制备有机 - 无机化合物。 纳米材料的其他制造方法包括将电子束辐射到有机 - 无机混合物上的步骤，该有机 - 无机混合物是通过混合金属盐或至少两种金属盐和被至少一个选自S， P，O和N.具有至少一个官能团的烃和被至少一个官能团取代的其它烃选自由具有-SH基团的C1-C20链烷硫醇，烷烃硫醇衍生物和二硫醇组成的组，以及 或由具有至少一个选自-OH，-C 6 H 5，-NO 2，-COOH，-H 3 PO 4的官能团的C 1 -C 20烷基的化合物组成的组中。 金属选自Au，Ag，Cu，Pt，Zn，Ni，Co，Mo，Mn，W，Ca，Ge，Se，Fe，Al，Ti，Pd，In，Sn和Pb。 电子束根据所选择的方法直接照射到有机 - 无机高分子化合物或有机 - 无机混合物上，具有改变能量强度和辐射时间。
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公开(公告)号：KR1020090123552A
公开(公告)日：2009-12-02
申请号：KR1020080049694
申请日：2008-05-28
Applicant: 재단법인서울대학교산학협력재단
IPC: C08F30/04 , C08F230/04 , C08F236/04 , C08J5/22
CPC classification number: C08F30/04 , C08F2/46 , C08F230/04 , C08F236/04 , C08J5/18
Abstract: PURPOSE: A copper-containing polymer is provided to form a copper-containing thin film with uniform surface through processes such as spray or wet coating, and micropattern by photolithography, and to be applied to a electromagnetic shielding film. CONSTITUTION: A copper-containing polymer comprises a repeating unit represented by chemical formula 1. In chemical formula 1, R1 shows hydrogen atom or C1-C10 alkyl group; R2 is an electron donating group or an aliphatic or aromatic hydrocarbon chain having the electron donating group at an end; Z shows a ligand bond functional group coordinating copper or a ligand bond compound; and n is an integer of 1-10,000.
Abstract translation: 目的：提供含铜聚合物以通过诸如喷雾或湿涂层的方法形成具有均匀表面的含铜薄膜，并且通过光刻法形成微图案，并且应用于电磁屏蔽膜。 构成：含铜聚合物包含由化学式1表示的重复单元。在化学式1中，R 1表示氢原子或C 1 -C 10烷基; R2是末端具有给电子基团的给电子基团或脂肪族或芳香族烃链; Z表示配位键官能团，配位铜或配体键合化合物; n为1-10,000的整数。
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公开(公告)号：KR100918807B1
公开(公告)日：2009-09-25
申请号：KR1020080049702
申请日：2008-05-28
Applicant: 재단법인서울대학교산학협력재단
Abstract: PURPOSE: An antibacterial polymer composition is provided to ensure strong sterilizing power or antibacterial activity by reducing copper contained in a polymer. CONSTITUTION: An antibacterial polymer composition includes a copper-containing polymer and organic solvent. The antibacterial polymer composition has antibacterial activity for microorganism through reduction processing. The copper-containing polymer has a repeating unit represented by formula 1. A method for forming an antibacterial polymer film comprises the steps of: forming a copper-containing polymer film on a substance by applying the polymer composition; and imparting an antibacterial property for microorganism to the copper-containing polymer film by reducing the copper-containing polymer film using a reducing agent through chemical reduction, thermal reduction, and photo reduction.
Abstract translation: 目的：提供抗菌聚合物组合物，以通过减少聚合物中所含的铜来确保强的灭菌力或抗菌活性。 构成：抗菌聚合物组合物包括含铜聚合物和有机溶剂。 抗菌聚合物组合物通过还原处理对微生物具有抗菌活性。 含铜聚合物具有由式1表示的重复单元。抗菌聚合物膜的形成方法包括以下步骤：通过施加聚合物组合物在物质上形成含铜聚合物膜; 并通过化学还原，热还原和光还原使用还原剂还原含铜聚合物膜，将微生物的抗菌性赋予含铜聚合物膜。
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公开(公告)号：KR1020040024154A
公开(公告)日：2004-03-20
申请号：KR1020020055679
申请日：2002-09-13
Applicant: 삼성전자주식회사
Inventor： 허근
IPC: H01L21/205
Abstract: PURPOSE: High density plasma chemical vapor deposition(CVD) equipment capable of controlling generation of particles on the edge of a semiconductor wafer is provided to control a defect on the edge of a semiconductor wafer due to plasma and reaction gas by installing a clamp between the wafer and the plasma so that the clamp overlaps the edge of the wafer. CONSTITUTION: An inner space of a predetermined size is defined by the outer wall(310) of a chamber. The semiconductor wafer(200) is placed on a susceptor(320) in the chamber. A gas supply unit is so disposed to confront the upper surface of the semiconductor wafer. The clamp(360) is so disposed between the plasma on the semiconductor wafer and the semiconductor wafer to overlap the edge of the semiconductor wafer.
Abstract translation: 目的：提供能够控制半导体晶片边缘产生颗粒的高密度等离子体化学气相沉积（CVD）设备，以通过在等离子体和反应气体之间安装夹具来控制由于等离子体和反应气体导致的半导体晶片边缘的缺陷 晶片和等离子体，使得钳位件与晶片的边缘重叠。 构成：预定尺寸的内部空间由腔室的外壁（310）限定。 半导体晶片（200）被放置在腔室中的基座（320）上。 气体供给单元被设置为面对半导体晶片的上表面。 夹具（360）设置在半导体晶片上的等离子体和半导体晶片之间以与半导体晶片的边缘重叠。
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Patent Agency Ranking
公开(公告)号：KR1020060037563A
公开(公告)日：2006-05-03
申请号：KR1020040086557
申请日：2004-10-28
Applicant: 삼성전자주식회사
IPC: H01L21/31
CPC classification number: H01L21/02252 , H01L21/02274 , H01L21/3065
Abstract: 본 발명은 고밀도 플라즈마 절연막을 형성시 플라즈마 충격에 의한 금속이온의 발생을 방지할 수 있는 고밀도 플라즈마 절연막의 형성방법을 제공한다. 그 방법은 반응챔버 내의 반도체 기판 상으로 공급된 반응가스를 리모트 플라즈마 발생기를 이용하여 플라즈마화시키고, 플라즈마화된 반응가스를 반도체 기판에 접촉시켜 제1 절연막을 형성한 다음, 상기 반응챔버 내로 공급된 스퍼터용 식각가스를 상기 리모트 플라즈마 발생기를 이용하여 플라즈마화 시킨 후 상기 반도체 기판의 표면을 스퍼터 식각하여 상기 제1 절연막을 소정 두께만큼 제거한다.
고밀도 플라즈마, 리모트, 절연막, 스퍼터 식각-
公开(公告)号：KR1020020018476A
公开(公告)日：2002-03-08
申请号：KR1020000051801
申请日：2000-09-02
Applicant: 삼성전자주식회사
IPC: H01L21/76
Abstract: PURPOSE: A method for forming an isolation region of a semiconductor device is provided to shorten an interval of time for forming the isolation region, by reducing processes for forming a trench oxide layer and annealing an insulation material to one process. CONSTITUTION: A silicon oxide layer(120) is formed on a semiconductor substrate(100). A predetermined portion of the silicon oxide layer and the semiconductor substrate under the predetermined portion are continuously etched to form a trench. An insulation material(160) is filled in the trench. The semiconductor substrate of the sidewall and bottom of the trench filled with the insulation material is oxidized to form a trench oxide layer(180) on the sidewall and bottom of the trench. The insulation material and the silicon oxide layer remaining on the semiconductor substrate are continuously polished by a mechanical polishing method until the surface of the semiconductor substrate is exposed, so that the isolation region is formed.
Abstract translation: 目的：提供一种用于形成半导体器件的隔离区域的方法，通过减少用于形成沟槽氧化物层的工艺和将绝缘材料退火到一个工艺来缩短用于形成隔离区域的时间间隔。 构成：在半导体衬底（100）上形成氧化硅层（120）。 氧化硅层和预定部分下方的半导体衬底的预定部分被连续蚀刻以形成沟槽。 绝缘材料（160）填充在沟槽中。 填充有绝缘材料的沟槽的侧壁和底部的半导体衬底被氧化以在沟槽的侧壁和底部上形成沟槽氧化物层（180）。 残留在半导体基板上的绝缘材料和氧化硅层通过机械抛光法连续抛光，直到半导体衬底的表面露出，从而形成隔离区。
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公开(公告)号：KR1020000065321A
公开(公告)日：2000-11-15
申请号：KR1019990011469
申请日：1999-04-01
Applicant: 삼성전자주식회사
IPC: H01L21/027
Abstract: PURPOSE: A method for preventing a lifting of a photoresist pattern is provided to increase an adhesion between a photoresist pattern and a material layer and to prevent the photoresist pattern from being lifted in a subsequent wet etch process by forming a thin nitride layer on a hydrophilic material layer. CONSTITUTION: In a method for preventing a lifting of a photoresist pattern when a material layer(100) having a hydrophilic property is wet-etched by using a photoresist pattern(106) as a mask, a thin material layer(104) is formed on the material layer to increase an adhesion between the photoresist pattern and the material layer.
Abstract translation: 目的：提供防止光致抗蚀剂图案提升的方法以增加光致抗蚀剂图案和材料层之间的粘附性，并且防止光致抗蚀剂图案在随后的湿法蚀刻工艺中被提升，通过在亲水层上形成薄的氮化物层 材料层。 构成：在通过使用光致抗蚀剂图案（106）作为掩模对具有亲水性的材料层（100）进行湿式蚀刻时，防止光致抗蚀剂图案的提升的方法中，将薄材料层（104）形成在 材料层以增加光致抗蚀剂图案和材料层之间的粘合力。
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公开(公告)号：KR102220445B1
公开(公告)日：2021-02-25
申请号：KR1020190078909
申请日：2019-07-01
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
Abstract: 실시예의반도체소자는기판과, 상기기판상에배치된절연층과, 상기절연층상에배치된문턱전압조절층과, 상기문턱전압조절층상에배치된제1 반도체층과, 상기문턱전압조절층상에배치되어상기제1 반도체층의일부를덮는제2 반도체층을포함할수 있다. 실시예에따른부성미분저항소자는문턱전압조절층을형성함으로써, 게이트전압으로피크전압을소자의동작범위내에서자유롭게조절할수 있는효과가있다.
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公开(公告)号：KR1020210005333A
公开(公告)日：2021-01-14
申请号：KR1020190078909
申请日：2019-07-01
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
Abstract: 실시예의반도체소자는기판과, 상기기판상에배치된절연층과, 상기절연층상에배치된문턱전압조절층과, 상기문턱전압조절층상에배치된제1 반도체층과, 상기문턱전압조절층상에배치되어상기제1 반도체층의일부를덮는제2 반도체층을포함할수 있다. 실시예에따른부성미분저항소자는문턱전압조절층을형성함으로써, 게이트전압으로피크전압을소자의동작범위내에서자유롭게조절할수 있는효과가있다.
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