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Patent Agency Ranking
公开(公告)号：KR101556360B1
公开(公告)日：2015-09-30
申请号：KR1020120089736
申请日：2012-08-16
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/194 , C23C16/56 , H01J37/321 , H01J37/32146 , Y10S977/845
Abstract: 그래핀물성복귀방법및 장치가개시된다. 개시된그래핀물성복귀방법및 장치는그래핀을접지한상태에서 0.3*10~30*10cm의범위내에저밀도플라즈마에상기그래핀을노출하여상기그래핀의물성을복귀시킨다. 이러한그래핀물성복귀방법및 장치는저온, 대면적, 빠른공정속도, 친환경, 그리고실리콘공정과호환가능하다.
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公开(公告)号：KR1020130077405A
公开(公告)日：2013-07-09
申请号：KR1020110146099
申请日：2011-12-29
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L27/108 , H01L21/8242
CPC classification number: H01L29/792 , H01L29/4234 , H01L29/66833
Abstract: PURPOSE: A memory device consisting of one graphene transistor and a method for manufacturing and operating the same are provided to perform a high speed operation by using a graphene channel. CONSTITUTION: A first, a second, and a third electrode are separated from each other. A graphene layer (34) is in contact with the second and the third electrode. The graphene layer is insulated from the first electrode. The graphene layer is a memory layer. The graphene layer has the density of charge trap sites.
Abstract translation: 目的：提供由一个石墨烯晶体管组成的存储器件及其制造和操作方法，以通过使用石墨烯通道来执行高速操作。 构成：第一，第二和第三电极彼此分离。 石墨烯层（34）与第二和第三电极接触。 石墨烯层与第一电极绝缘。 石墨烯层是记忆层。 石墨烯层具有电荷陷阱位置的密度。
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公开(公告)号：KR101027315B1
公开(公告)日：2011-04-06
申请号：KR1020090016717
申请日：2009-02-27
Applicant: 성균관대학교산학협력단
IPC: H01L21/20 , B82B3/00 , H01L29/786 , B82Y40/00
Abstract: 나노 와이어의 제조방법을 개시한다. 상기 방법은 실리콘 기판을 진공 상태의 챔버 안에 제공하는 기판 제공단계, 상기 진공 상태의 챔버 안에 육플루오린화 황(SF
6 ) 및 산소(O
2 )를 투입하고 상기 진공 상태의 챔버에 전원을 인가하여 플라즈마를 생성시키는 플라즈마 생성단계, 및 상기 플라즈마를 이용하여 상기 실리콘 기판을 식각함으로써 실리콘 나노 와이어를 형성하는 플라즈마 식각단계를 포함한다.
나노, 와이어, 진공, 플라즈마, 식각-
公开(公告)号：KR1020140023631A
公开(公告)日：2014-02-27
申请号：KR1020120089736
申请日：2012-08-16
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/194 , C23C16/56 , H01J37/321 , H01J37/32146 , Y10S977/845 , B01J19/12
Abstract: Disclosed are a method and an appartus for restoring the physical properties of graphene. The method and the apparatus for restoring the physical properties of graphene restore the physical properties of graphene by exposing the graphene to low density plasma within a range of 0.3*10^8-30*10^8 cm^-3 in a condition in which the graphene is grounded. The method and the apparatus for restoring the physical properties of graphene are compatible with a silicon process, are environment-friendly, enables a high speed process, a low temperature process, and a large area process.
Abstract translation: 公开了用于恢复石墨烯的物理性质的方法和应用。 用于恢复石墨烯的物理性能的方法和装置通过在0.3×10 ^ 8-30×10 ^ 8cm -3 -3的范围内将石墨烯暴露于低密度等离子体来恢复石墨烯的物理性质，其中 石墨烯接地。 用于恢复石墨烯的物理性能的方法和装置与硅工艺兼容，环境友好，能够实现高速工艺，低温工艺和大面积工艺。
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公开(公告)号：KR1020100097859A
公开(公告)日：2010-09-06
申请号：KR1020090016717
申请日：2009-02-27
Applicant: 성균관대학교산학협력단
IPC: H01L21/20 , B82B3/00 , H01L29/786 , B82Y40/00
CPC classification number: B82B3/0014 , B82Y40/00 , H01L29/0669
Abstract: PURPOSE: A nano wire manufacturing method is provided to form a nanowire of various length by controlling the condition such as the ratio of fluorination sulfur and oxygen, the etching time of plasma, and bias power. CONSTITUTION: A silicon substrate is offered on a chuck inside the chamber in state of vacuum(S210). A plasma is formed inside the chamber by applying the power to a first power unit and a second power unit(S220). A silicon substrate is etched using the plasma(S230). The silicon nano wire is formed(S240).
Abstract translation: 目的：通过控制氟化硫和氧的比例，等离子体的蚀刻时间和偏压功率等条件，提供纳米线制造方法以形成各种长度的纳米线。 构成：在真空状态下，在室内的卡盘上提供硅衬底（S210）。 通过向第一电力单元和第二电力单元施加电力，在室内形成等离子体（S220）。 使用等离子体蚀刻硅衬底（S230）。 形成硅纳米线（S240）。
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