公开(公告)号：KR1020070117490A

公开(公告)日：2007-12-12

申请号：KR1020070055527

申请日：2007-06-07

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 오카히사다쿠지 ,  모토키겐사쿠 ,  우에마츠고지 ,  나카하타세이지 ,  히로타류 ,  이지리히데유키 ,  가사이히토시 ,  후지타슌스케 ,  사토후미타카 ,  마츠오카도루

IPC: H01L21/20 ,  H01L33/16

CPC classification number: C30B29/406 ,  C30B25/00 ,  C30B25/183

Abstract: A method of growing a gallium nitride crystal is provided to reduce a density of dislocations effectively by forming a stable grain boundary at an interface of two different crystal regions, in an epitaxial growth method. A mask(M) inhibiting epitaxial growth of a gallium nitride crystal is formed partially on a ground substrate(U). The gallium nitride crystal is grown epitaxially on the ground substrate in which the mask is formed, while doping carbon. A first crystal region is grown from a periphery region of the mask toward inside, and an c-axis direction is reversed in the first crystal region relative to a second crystal region grown on a region where the mask is not formed in the ground substrate.

Abstract translation: 提供一种生长氮化镓晶体的方法，通过在外延生长法中在两个不同晶体区域的界面处形成稳定的晶界，有效地降低位错密度。 抑制氮化镓晶体的外延生长的掩模（M）部分地形成在接地基板（U）上。 在形成掩模的接地衬底上外延生长氮化镓晶体，同时掺杂碳。 第一晶体区域从掩模的周边区域向内部生长，并且在第一晶体区域中相对于在未在掩模衬底中形成掩模的区域上生长的第二晶体区域的c轴方向反转。