公开(公告)号：KR101347411B1

公开(公告)日：2014-01-02

申请号：KR1020060131038

申请日：2006-12-20

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 가사이히토시 ,  오카히사다쿠지 ,  후지타슌스케 ,  마츠모토나오키 ,  이지리히데유키 ,  사토후미타카 ,  모토키겐사쿠 ,  나카하타세이지 ,  우에마츠고지 ,  히로타류

IPC: C30B29/38

CPC classification number: H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

Abstract: 본 발명에 따른 Ⅲ족 질화물 결정체의 제조 방법은 반응실(110) 내에 HCl 가스(1)를 도입하여 반응실(110) 내를 세정하는 공정과, 세정된 반응실(110) 내에서 Ⅲ족 질화물 결정체(11)를 기상 성장시키는 공정을 포함한다. 또한, Ⅲ족 질화물 결정체의 제조 장치(100)는 반응실(110) 내에 HCl 가스(1)를 도입하는 구조와 HVPE법에 의해 Ⅲ족 질화물 결정체(11)를 성장시키는 구조를 구비한다. 이에 따라, 결정 성장시에 반응실 내에 부착된 퇴적물을 효과적으로 세정하는 방법을 포함하는 Ⅲ족 질화물 결정체의 제조 방법 및 그 제조 방법에서 이용되는 제조 장치가 제공된다.

公开(公告)号：KR1020090088307A

公开(公告)日：2009-08-19

申请号：KR1020090004621

申请日：2009-01-20

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 사토후미타카 ,  나카하타세이지

IPC: C01B21/06

CPC classification number: C30B29/403 ,  C30B29/406 ,  C30B33/12

Abstract: A manufacturing method of a III family nitride crystal is provided to restrict generation of a crack of the III family nitride crystal when a III family nitride substrate is removed efficiently. A manufacturing method of a III family nitride crystal includes the following steps of: growing a III family nitride crystal having different one between kind and rate of constitutional atoms and the kinds and concentration of dopant on a main surface of a III family nitride substrate(10); and removing the III family nitride substrate with vapor phase etching; and spinning etching gas on the other surface of the III family nitride substrate. The spinning etching uses one kind at least selected from a group consisting of HCI gas, Cl2 gas and H2 gas. The difference of the etching temperature of the spinning etching and the growth temperature of the III family nitride crystal is 200‹C or less.

Abstract translation: 提供了III族氮化物晶体的制造方法，以在III族氮化物衬底被有效去除时限制III族氮化物晶体的裂纹产生。 III族氮化物晶体的制造方法包括以下步骤：在III族氮化物衬底（10族）的主表面上生长具有不同种类和结构原子比的III族氮化物晶体和掺杂剂的种类和浓度 ）; 并用气相蚀刻去除III族氮化物衬底; 并在III族氮化物衬底的另一表面上旋转蚀刻气体。 纺丝蚀刻使用至少选自由HCl气体，Cl 2气体和H 2气体组成的组中的一种。 纺丝蚀刻的蚀刻温度与III族氮化物晶体的生长温度的差为200℃以下。

公开(公告)号：KR1020060127743A

公开(公告)日：2006-12-13

申请号：KR1020060044630

申请日：2006-05-18

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 우에마츠코지 ,  사토후미타카 ,  히로타류 ,  나카하타세이지 ,  나카하타히데아키

IPC: H01L21/20 ,  H01L31/0304

CPC classification number: C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided to lower a dislocation density and to increase emission efficiency. A nitride semiconductor substrate includes a top surface, a bottom surface, a network defect accumulating region(H) of a width T', and a low defect density single crystal region(Z). The network defect accumulating region repeats a closed looped unit shape penetrating from the top surface to the bottom surface. The low defect density single crystal region is enclosed by the closed loop grain boundary(K) of the network defect accumulating region, and extends from the top surface to the bottom surface.

Abstract translation: 提供氮化物半导体衬底及其制造方法以降低位错密度并提高发光效率。 氮化物半导体衬底包括顶表面，底表面，宽度T'的网络缺陷累积区域（H）和低缺陷密度单晶区域（Z）。 网络缺陷累积区域重复从顶表面到底表面穿透的闭环单元形状。 低缺陷密度单晶区域由网络缺陷积聚区域的闭环晶界（K）包围，并从顶表面延伸到底表面。

公开(公告)号：KR1020090042164A

公开(公告)日：2009-04-29

申请号：KR1020080102984

申请日：2008-10-21

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 사토후미타카 ,  나카하타세이지 ,  기야마마코토

IPC: H01L21/20 ,  H01L21/335 ,  H01L29/768 ,  H01L29/772

CPC classification number: C30B25/04 ,  B82Y10/00 ,  C30B29/406 ,  H01L21/02395 ,  H01L21/02436 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/66469 ,  H01L29/7786

Abstract: A semi-insulating nitride semiconductor substrate, a manufacturing method thereof, a nitride epitaxial substrate, and a field effect transistor are provided to prevent a mixing of oxygen and to grow a uniform crystal by maintaining a growing temperature into a high temperature. A mask is formed on a base substrate. In the mask, a cover part of a dot type or a stripe type having a diameter or a width of 10~100um is arranged with an interval of 250~2000um. A nitride semiconductor crystal is grown on the base substrate by supplying a gas containing a group 3 raw material gas, a group 5 raw material gas, and iron by an HVPE(Hydride Vapor Phase Epitaxy) method with a temperature 1040~1150°C. The base substrate is removed. A crystal surface except for the cover part is flattened in a temperature of 1090~1150°C.

Abstract translation: 提供半绝缘氮化物半导体衬底，其制造方法，氮化物外延衬底和场效应晶体管，以通过将生长温度保持在高温来防止氧的混合并生长均匀的晶体。 在基底基板上形成掩模。 在面罩中，以直径或宽度为10〜100um的点状或条状的覆盖部分间隔250〜2000um。 通过在1040〜1150℃的温度下通过HVPE（氢化物气相外延）法提供含有3族原料气体，5族原料气体和铁的气体，在基底基板上生长氮化物半导体晶体。 去除基底衬底。 除了盖部分之外的晶体表面在1090〜1150℃的温度下变平。

公开(公告)号：KR1020070117490A

公开(公告)日：2007-12-12

申请号：KR1020070055527

申请日：2007-06-07

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 오카히사다쿠지 ,  모토키겐사쿠 ,  우에마츠고지 ,  나카하타세이지 ,  히로타류 ,  이지리히데유키 ,  가사이히토시 ,  후지타슌스케 ,  사토후미타카 ,  마츠오카도루

IPC: H01L21/20 ,  H01L33/16

CPC classification number: C30B29/406 ,  C30B25/00 ,  C30B25/183

Abstract: A method of growing a gallium nitride crystal is provided to reduce a density of dislocations effectively by forming a stable grain boundary at an interface of two different crystal regions, in an epitaxial growth method. A mask(M) inhibiting epitaxial growth of a gallium nitride crystal is formed partially on a ground substrate(U). The gallium nitride crystal is grown epitaxially on the ground substrate in which the mask is formed, while doping carbon. A first crystal region is grown from a periphery region of the mask toward inside, and an c-axis direction is reversed in the first crystal region relative to a second crystal region grown on a region where the mask is not formed in the ground substrate.

Abstract translation: 提供一种生长氮化镓晶体的方法，通过在外延生长法中在两个不同晶体区域的界面处形成稳定的晶界，有效地降低位错密度。 抑制氮化镓晶体的外延生长的掩模（M）部分地形成在接地基板（U）上。 在形成掩模的接地衬底上外延生长氮化镓晶体，同时掺杂碳。 第一晶体区域从掩模的周边区域向内部生长，并且在第一晶体区域中相对于在未在掩模衬底中形成掩模的区域上生长的第二晶体区域的c轴方向反转。

公开(公告)号：KR1020070082842A

公开(公告)日：2007-08-22

申请号：KR1020060112672

申请日：2006-11-15

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 사토후미타카 ,  나카하타세이지

IPC: H01L21/84 ,  H01L21/8252 ,  H01L21/20 ,  H01L33/16

CPC classification number: C30B29/40 ,  C30B25/04

Abstract: A GaN crystal substrate is provided to reduce bending of a GaN wafer by generating defects in an interface between a c-axis gross core region and a low-defect single crystal region. A low-defect single crystal region(Z) has a c-axis and an-axis. A C-facet growth region(Y)(11) has a c-axis and an a-axis which are parallel with the c-axis and a-axis of the low-defect single crystal region. A defect gathering region(H)(21) has a c-axis opposite to the direction of the c-axis of the low-defect single crystal region and an a-axis opposite to the direction of the a-axis of the low-defect single crystal region. A c-axis gross core region(F)(31) of 0.1-10/centimeter^2 has a c-axis parallel with the c-axis of the low-defect single crystal region and an a-axis different from the a-axis of the low-defect single crystal region, including at least one crystal. The low-defect single crystal region and the C-facet growth region can a random defect gathering region(G)(12) of 0~100/centimeter^2.

Abstract translation: 提供GaN晶体基板，以通过在c轴总芯部区域和低缺陷单晶体区域之间的界面产生缺陷来减少GaN晶片的弯曲。 低缺陷单晶区域（Z）具有c轴和a轴。 C面生长区域（Y）（11）具有与低缺陷单晶区域的c轴和a轴平行的c轴和a轴。 缺陷聚集区域（H）（21）具有与低缺陷单晶区域的c轴方向相反的c轴和与低缺陷单晶区域的a轴方向相反的a轴。 缺陷单晶区。 0.1-10厘米2的c轴总芯区域（31）具有与低缺陷单晶区域的c轴平行的c轴和与a- 低缺陷单晶区域的轴线，包括至少一个晶体。 低缺陷单晶区域和C面生长区域可以是0〜100 /厘米2的随机缺陷聚集区域（G）（12）。

公开(公告)号：KR1020100113529A

公开(公告)日：2010-10-21

申请号：KR1020107016127

申请日：2009-01-08

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 사토후미타카 ,  나카하타세이지

IPC: C30B29/38 ,  C30B25/18 ,  C23C16/34 ,  H01L21/205

CPC classification number: C30B29/406 ,  C30B25/18 ,  C30B25/186 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658

Abstract: 본 Ⅲ족 질화물 결정의 성장 방법은 하나의 주요면(10m)을 갖는 Ⅲ족 질화물 종결정(10a)을 포함하는 기판(10)을 준비하는 공정과, 기상 에칭으로 기판(10)의 주요면(10m)에 복수의 패싯(10ms, 10mt, 10mu)을 형성하는 공정과, 패싯(10ms, 10mt, 10mu)이 형성된 주요면(10m) 상에 Ⅲ족 질화물 결정(20)을 성장시키는 공정을 포함함으로써, 간편하고 효율적으로 전위 밀도가 낮은 Ⅲ족 질화물 결정(20)을 얻을 수 있다.

公开(公告)号：KR1020070070070A

公开(公告)日：2007-07-03

申请号：KR1020060131038

申请日：2006-12-20

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 가사이히토시 ,  오카히사다쿠지 ,  후지타슌스케 ,  마츠모토나오키 ,  이지리히데유키 ,  사토후미타카 ,  모토키겐사쿠 ,  나카하타세이지 ,  우에마츠고지 ,  히로타류

IPC: C30B29/38

CPC classification number: H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

Abstract: A method and apparatus for preparing a group III nitride crystal substance is provided to effectively clean deposits adhered on a reaction chamber during growth of the group III nitride crystal substance. An interior of a reaction chamber is cleaned by introducing HCl gas into the reaction chamber, and a group III nitride crystal substance is vapor-deposited in the cleaned reaction chamber. The step of cleaning the interior of the reaction chamber is carried out under conditions of at least 1.013 hPa and not more than 1013 hPa for HCl gas partial pressure and at least 650 deg.C to 1200 deg.C for temperature in the reaction chamber.

Abstract translation: 提供了用于制备III族氮化物晶体物质的方法和装置，以有效地清除在III族氮化物晶体物质生长过程中附着在反应室上的沉积物。 通过将HCl气体引入反应室来清洁反应室的内部，并且在清洁的反应室中气相沉积III族氮化物晶体物质。 清洗反应室内部的步骤在HCl气体分压至少为1.013hPa和不高于1013hPa，反应室内的温度为至少650℃至1200℃的条件下进行。