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公开(公告)号：KR101347411B1
公开(公告)日：2014-01-02
申请号：KR1020060131038
申请日：2006-12-20
Applicant: 스미토모덴키고교가부시키가이샤
IPC: C30B29/38
CPC classification number: H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
Abstract: 본 발명에 따른 Ⅲ족 질화물 결정체의 제조 방법은 반응실(110) 내에 HCl 가스(1)를 도입하여 반응실(110) 내를 세정하는 공정과, 세정된 반응실(110) 내에서 Ⅲ족 질화물 결정체(11)를 기상 성장시키는 공정을 포함한다. 또한, Ⅲ족 질화물 결정체의 제조 장치(100)는 반응실(110) 내에 HCl 가스(1)를 도입하는 구조와 HVPE법에 의해 Ⅲ족 질화물 결정체(11)를 성장시키는 구조를 구비한다. 이에 따라, 결정 성장시에 반응실 내에 부착된 퇴적물을 효과적으로 세정하는 방법을 포함하는 Ⅲ족 질화물 결정체의 제조 방법 및 그 제조 방법에서 이용되는 제조 장치가 제공된다.
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公开(公告)号：KR1020070117490A
公开(公告)日：2007-12-12
申请号：KR1020070055527
申请日：2007-06-07
Applicant: 스미토모덴키고교가부시키가이샤
CPC classification number: C30B29/406 , C30B25/00 , C30B25/183
Abstract: A method of growing a gallium nitride crystal is provided to reduce a density of dislocations effectively by forming a stable grain boundary at an interface of two different crystal regions, in an epitaxial growth method. A mask(M) inhibiting epitaxial growth of a gallium nitride crystal is formed partially on a ground substrate(U). The gallium nitride crystal is grown epitaxially on the ground substrate in which the mask is formed, while doping carbon. A first crystal region is grown from a periphery region of the mask toward inside, and an c-axis direction is reversed in the first crystal region relative to a second crystal region grown on a region where the mask is not formed in the ground substrate.
Abstract translation: 提供一种生长氮化镓晶体的方法，通过在外延生长法中在两个不同晶体区域的界面处形成稳定的晶界，有效地降低位错密度。 抑制氮化镓晶体的外延生长的掩模（M）部分地形成在接地基板（U）上。 在形成掩模的接地衬底上外延生长氮化镓晶体，同时掺杂碳。 第一晶体区域从掩模的周边区域向内部生长，并且在第一晶体区域中相对于在未在掩模衬底中形成掩模的区域上生长的第二晶体区域的c轴方向反转。
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3.发明公开
公开(公告)号：KR1020090012091A
公开(公告)日：2009-02-02
申请号：KR1020080070111
申请日：2008-07-18
Applicant: 스미토모덴키고교가부시키가이샤
Inventor： 후지타슌스케
CPC classification number: C30B29/406 , C30B25/02
Abstract: A gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer are provided to prevent the crack generated when forming the thin film and to grow thick gallium nitride crystal. The gallium nitride crystal is grown by hydride vapor phase epitaxy growth method, using the carrier gas, the GaN raw material, and the silicon dopant gas. The dew point of the carrier gas is less than -60°C(S2). The partial pressure of the carrier gas is 0.56atm over or 0.92 atm less.
Abstract translation: 提供氮化镓晶体生长方法，氮化镓晶体衬底，外延晶片制造方法和外延晶片，以防止在形成薄膜时产生的裂纹和生长厚的氮化镓晶体。 使用载气，GaN原料和硅掺杂气体，通过氢化物气相外延生长法生长氮化镓晶体。 载气的露点小于-60℃（S2）。 载气的分压为0.56atm以上或0.92atm以下。
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公开(公告)号：KR1020070070070A
公开(公告)日：2007-07-03
申请号：KR1020060131038
申请日：2006-12-20
Applicant: 스미토모덴키고교가부시키가이샤
IPC: C30B29/38
CPC classification number: H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
Abstract: A method and apparatus for preparing a group III nitride crystal substance is provided to effectively clean deposits adhered on a reaction chamber during growth of the group III nitride crystal substance. An interior of a reaction chamber is cleaned by introducing HCl gas into the reaction chamber, and a group III nitride crystal substance is vapor-deposited in the cleaned reaction chamber. The step of cleaning the interior of the reaction chamber is carried out under conditions of at least 1.013 hPa and not more than 1013 hPa for HCl gas partial pressure and at least 650 deg.C to 1200 deg.C for temperature in the reaction chamber.
Abstract translation: 提供了用于制备III族氮化物晶体物质的方法和装置，以有效地清除在III族氮化物晶体物质生长过程中附着在反应室上的沉积物。 通过将HCl气体引入反应室来清洁反应室的内部，并且在清洁的反应室中气相沉积III族氮化物晶体物质。 清洗反应室内部的步骤在HCl气体分压至少为1.013hPa和不高于1013hPa，反应室内的温度为至少650℃至1200℃的条件下进行。
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