Abstract:
PURPOSE: A p-type transparent oxide semiconductor, a transistor having the same, and a method for manufacturing the same are provided to have high transmittance necessary for transparent display production and to be used for various semiconductor devices including a transparent flexible substrate. CONSTITUTION: An insulating layer (11) is formed on a gate substrate (10). A channel layer (12) including a p-type transparent oxide semiconductor is formed on the insulating layer. The p-type transparent oxide semiconductor includes a tin oxide compound. A source electrode (13) and a drain electrode (14) are formed on the insulating layer. The source electrode is separated from the drain electrode. [Reference numerals] (10) Gate substrate; (11) Insulating layer; (12) Channel layer; (13) Source electrode; (14) Drain electrode
Abstract:
The present invention is a manufacturing method of green sheet and ceramic slurry to manufacture green sheet which includes: a first mixing stage which mixes a dispersion solvent and a dispersant to produce a dispersion solution; a second mixing stage which mixes a binder and plasticizer with the dispersion solution to produce one component solution; a third mixing stage which mixes ceramic powder and the one component solution to produce a ceramic slurry; and a film formation stage where the ceramic slurry is applied on the dish material and dried and then producing the green sheet including a ceramic sheet. The green sheet has a satisfying association and plasticity of the ceramic particles and a satisfying detachability from the film of the dish material; as well as the dispersibility of the raw material powder so that high density ceramic green sheet is provided with outstanding surface without bumps, cracks or creases.
Abstract:
A tube-furnace for improving ferroelectricity of a ferroelectric thin film by applying electric field with heat treatment and a method for improving ferroelectricity of the ferroelectric thin film using the same are provided to prevent increase of a surface roughness of the ferroelectric thin film. A pair of electrodes(12) are installed in a tube-furnace(1) so as to apply electric filed during a thermal treatment. A rotatable sample holder(13) fixes a thin sample located between the electrodes. A gas inlet(14) and a gas outlet(15) are prepared on the tube-furnace. The tube-furnace has a T-shape. The sample holder has a lode-lock shape and rotates for 360 degrees. A cross section of the electrode is greater than a total size of the thin sample fixed by the sample holder and electric field is applied to the whole surface of the thin sample.
Abstract:
본 발명은 그린시트의 제조방법 및 그린시트 제조용 세라믹 슬러리에 대한 발명으로, 분산용매 및 분산제를 혼합하여 분산용액을 제조하는 제1혼합단계, 바인더 및 가소제를 상기 분산용액과 혼합하여 일액형용액을 제조하는 제2혼합단계, 세라믹 분말과 상기 일액형용액을 혼합하여 세라믹 슬러리를 제조하는 제3혼합단계, 그리고 기재(器財) 상에 상기 세라믹 슬러리를 도포, 건조하여 세라믹 시트를 포함하는 그린시트를 제조하는 필름형성단계를 포함하여 그린시트를 제조할 수 있다. 상기 그린시트는 세라믹 입자 간의 결합성, 가소성 및 기재 필름으로부터의 박리성이 양호하고, 원료 분말의 분산성도 우수하여서, 요철이나 크랙, 주름이 없는 우수한 표면성상을 가지는 고밀도의 세라믹 그린시트를 제공할 수 있다.