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Patent Agency Ranking
公开(公告)号：KR1020020037409A
公开(公告)日：2002-05-21
申请号：KR1020000067337
申请日：2000-11-14
Applicant: 한국전자통신연구원
Abstract: PURPOSE: An electronic element having a horizontal carbon nanotube and manufacturing method thereof are provided to adjust the length of the carbon nanotube, enhance attachment of the carbon nanotube and a substrate, and facilitate subsequent processes after carbon nanotube formation. CONSTITUTION: An electronic element comprises an insulating film(21), a catalytic metal pattern(22), a carbon nanotube(23), and a protection insulating film(24). The catalytic metal pattern(22) is formed by depositing a metal film and selectively etching the insulating film(21). The carbon nanotube(23) is grown vertically to the catalytic metal pattern(22) by a thermal chemical deposition method and a plasma chemical deposition method. The protection insulating film(24) of SOG(silicon-on-glass) is formed over the whole structure. The protection insulating film(24) is selectively removed by lithography and etching and selectively etching the carbon nanotube to regulate the non-uniformly grown nanotube.
Abstract translation: 目的：提供一种具有水平碳纳米管的电子元件及其制造方法，以调节碳纳米管的长度，增强碳纳米管和基底的附着，并促进碳纳米管形成后的后续工艺。 构成：电子元件包括绝缘膜（21），催化金属图案（22），碳纳米管（23）和保护绝缘膜（24）。 催化金属图案（22）通过沉积金属膜并选择性地蚀刻绝缘膜（21）而形成。 碳纳米管（23）通过热化学沉积法和等离子体化学沉积法垂直生长至催化金属图案（22）。 在整个结构上形成SOG（玻璃上硅）的保护绝缘膜（24）。 通过光刻和蚀刻选择性地去除保护绝缘膜（24），并选择性地蚀刻碳纳米管以调节不均匀生长的纳米管。
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公开(公告)号：KR100373327B1
公开(公告)日：2003-02-25
申请号：KR1020000067337
申请日：2000-11-14
Applicant: 한국전자통신연구원
Abstract: PURPOSE: An electronic element having a horizontal carbon nanotube and manufacturing method thereof are provided to adjust the length of the carbon nanotube, enhance attachment of the carbon nanotube and a substrate, and facilitate subsequent processes after carbon nanotube formation. CONSTITUTION: An electronic element comprises an insulating film(21), a catalytic metal pattern(22), a carbon nanotube(23), and a protection insulating film(24). The catalytic metal pattern(22) is formed by depositing a metal film and selectively etching the insulating film(21). The carbon nanotube(23) is grown vertically to the catalytic metal pattern(22) by a thermal chemical deposition method and a plasma chemical deposition method. The protection insulating film(24) of SOG(silicon-on-glass) is formed over the whole structure. The protection insulating film(24) is selectively removed by lithography and etching and selectively etching the carbon nanotube to regulate the non-uniformly grown nanotube.
Abstract translation: 一种具有水平碳纳米管的电子元件及其制造方法，用于调节碳纳米管的长度，提高碳纳米管与基板的附着性，并且有利于碳纳米管形成后的后续工艺。 构成：电子元件包括绝缘膜（21），催化金属图案（22），碳纳米管（23）和保护绝缘膜（24）。 催化金属图案（22）通过沉积金属膜并选择性蚀刻绝缘膜（21）而形成。 碳纳米管（23）通过热化学沉积法和等离子体化学沉积法垂直于催化金属图案（22）生长。 SOG（玻璃上硅）的保护绝缘膜（24）形成在整个结构上。 通过光刻和蚀刻选择性地去除保护绝缘膜（24），并选择性地蚀刻碳纳米管以调节不均匀生长的纳米管。
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