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    초음파 분무 열분해에 의한 갈륨산아연 분말의 제조 방법
    4.
    发明公开
    초음파 분무 열분해에 의한 갈륨산아연 분말의 제조 방법 无效
    通过超声喷雾热解制备ZINC GALLIUMATE POWDER的方法

    公开(公告)号：KR1020000001988A

    公开(公告)日：2000-01-15

    申请号：KR1019980022517

    申请日：1998-06-16

    Applicant: 한국화학연구원

    Inventor： 김윤수 ,  김창균 ,  유승호

    IPC: C01G9/00

    CPC classification number: C01G15/006 ,  C01G9/006 ,  C01P2006/80

    Abstract: PURPOSE: Zinc galliumate useful as low voltage phosphor is manufactured by spraying mixed liquid of zinc nitrate and gallium nitrate by using an ultrasonic and heat-decomposing at 92000-1,200°C. CONSTITUTION: Zinc nitrate and gallium nitrate are melted in water in a ratio of Zn/Ga of 0.4-0.5 and added with 0.1-1 weight% of manganese nitrate, the mixed liquid is sprayed by using an ultrasonic oscillator(4). The sprayed mist is conveyed with carrier gas to a furnace and heat-decomposed at 92000-1,200°C. For example, 1.894g zinc nitrate and 5.155g gallium nitrate are melted in water in 100mL flask to give 100mL of 0.1M solution, which is poured into a receptacle with an ultrasonic oscillator. Oxygen is blown into the receptacle at 30sccm(standard cubic centimeters per minute, cm¬3/min). The temperature of furnace is raised to 1,100°C. A size of power particle shows a narrow distribution of 0.1-2 micro meter, a mean particle size is about 0.5 micro meter.

    Abstract translation: 目的：可用作低电压荧光粉的镓酸锌通过使用超声波喷射硝酸锌和硝酸镓的混合液体，通过92000-1200℃的热分解来制造。 构成：硝酸锌和硝酸镓以Zn / Ga为0.4-0.5的比例在水中熔融并加入0.1-1重量％的硝酸锰，混合液体用超声波振荡器（4）喷雾。 喷雾用载气输送到炉中，并在92000-1200℃下热分解。 例如，将1.894g硝酸锌和5.155g硝酸镓在100ml烧瓶中在水中熔化，得到100mL 0.1M溶液，将其倒入具有超声波振荡器的容器中。 氧气以30sccm（标准立方厘米每分钟，cm 3 / min）吹入容器。 炉温升至1100℃。 功率粒子的大小显示0.1-2微米的窄分布，平均粒径约为0.5微米。

    유기갈륨 화합물, 이의 제조 방법 및 이를 이용한 질화갈륨 박막의 제조 방법
    7.
    发明公开
    유기갈륨 화합물, 이의 제조 방법 및 이를 이용한 질화갈륨 박막의 제조 방법 失效
    有机化合物，其制备方法以及使用该化合物的氮化钛薄层的制备方法

    公开(公告)号：KR1020010002430A

    公开(公告)日：2001-01-15

    申请号：KR1019990022240

    申请日：1999-06-15

    Applicant: 한국화학연구원

    Inventor： 김윤수 ,  김창균 ,  유승호

    IPC: C07F5/00

    CPC classification number: C30B25/02 ,  C07F5/00 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262

    Abstract: PURPOSE: An organogallium compound, its preparation method and a method for preparing gallium nitride(GaN) thin layer by using the compound are provided, to prevent the nitrogen deficiency in thin layer formation. CONSTITUTION: The organogallium compound is represented by the formula: R2(N3)Ga(R'HNNR'H), wherein R and R' are independent each other and represent hydrogen or an alkyl group of C1-C5. The method for preparing the organogallium compound of the formula: R2(N3)Ga(R'HNNR'H), comprises the steps of reacting HCl salt of the alkylhydrazine of the formula: (R'HNNHR')-HX, with the alkylgallium of the formula: R3Ga, to obtain the compound of the formula: R2(X)Ga(R'HNNR'H), (step 1); and reacting the compound of formula: R2(X)Ga(R'HNNR'H), with azido sodium(step 2), wherein R and R' are independent each other and represent hydrogen or an alkyl group of C1-C5, and X represents a halogen atom. Preferably the step 1 is carried out in THF, acetonitrile or diethylether at -79 to 10 deg.C; and the step 2 is carried out in THF, acetonitrile or toluene at 70-100 deg.C.

    Abstract translation: 目的：提供一种有机镓化合物，其制备方法和使用该化合物制备氮化镓（GaN）薄层的方法，以防止薄层形成中的氮缺乏。 构成：有机镓化合物由下式表示：R2（N3）Ga（R'HNNR'H），其中R和R'彼此独立，表示氢或C1-C5的烷基。 制备下式：R2（N3）Ga（R'HNNR'H）的有机镓化合物的方法包括使式（R'HNNHR'） - HX的烷基肼的HCl盐与烷基镓 得到下式的化合物：R2（X）Ga（R'HNNR'H），（步骤1）; 并使式（Ⅹ）Ga（R'HNNR'H）化合物与叠氮基钠（步骤2）反应，其中R和R'彼此独立地表示氢或C1-C5的烷基，和 X表示卤素原子。 优选地，步骤1在-79至10℃的THF，乙腈或乙醚中进行; 步骤2在70-100℃在THF，乙腈或甲苯中进行。

    휘발성 니켈 아미노알콕사이드 화합물, 이의 제조 방법 및이를 이용한 니켈 박막의 형성 방법
    9.
    发明公开
    휘발성 니켈 아미노알콕사이드 화합물, 이의 제조 방법 및이를 이용한 니켈 박막의 형성 방법 有权
    挥发性镍类氨基氧化物复合物及其制备方法及使用其形成镍薄膜的方法

    公开(公告)号：KR1020050033737A

    公开(公告)日：2005-04-13

    申请号：KR1020030069585

    申请日：2003-10-07

    Applicant: 한국화학연구원

    Inventor： 김윤수 ,  김창균 ,  이영국 ,  정택모 ,  안기석 ,  이선숙 ,  유승호 ,  성기환 ,  정영숙 ,  한기철

    IPC: C07F15/04

    CPC classification number: C07F15/045 ,  C23C16/18

    Abstract: Volatile nickel aminoalkoxide complexes, a preparation method thereof and a process for formation of a nickel thin film by using the same compounds are provided, which compounds have high volatility and sufficient thermal stability, and are reduced to nickel by self-pyrolysis without a reducing agent. so that the compounds are useful as a MOCVD(metal organic chemical vapor deposition) precursor for formation of the nickel thin film. The volatile nickel aminoalkoxide complexes represented by formula (1) are provided, wherein m is an integer of 1 to 3; and R and R' are C1-C4 linear or branched alkyl. The volatile nickel aminoalkoxide complexes represented by formula (2) are provided, wherein m is an integer of 1 to 3; n is an integer of 2 to 4; and R and R' are C1-C4 linear or branched alkyl. The method for preparing the volatile nickel aminoalkoxide complexes of formula (1) or (2) comprises a halogenized hexamine nickel compound of Ni(NH3)6X2 with an alkali metal salt of aminoalkoxide of MOCR'2(CH2)mNR2 or MOCR'2(CH2)mO(CH2)nNR2, wherein X is Cl, Br or I; and M is Li or Na. The process for formation of the nickel thin film comprises growing the nickel thin film by using the volatile nickel aminoalkoxide complexes of formula (1) or (2) as a precursor at 250 to 350 deg. C.

    Abstract translation: 提供挥发性镍氨基醇氧化物络合物，其制备方法和通过使用相同化合物形成镍薄膜的方法，该化合物具有高挥发性和足够的热稳定性，并且通过自热解而不用还原剂还原成镍 。 使得这些化合物可用作用于形成镍薄膜的MOCVD（金属有机化学气相沉积）前体。 提供由式（1）表示的挥发性镍氨基醇氧化物络合物，其中m为1至3的整数; 并且R和R'是C 1 -C 4直链或支链烷基。 提供由式（2）表示的挥发性镍氨基醇盐络合物，其中m为1至3的整数; n为2〜4的整数， 并且R和R'是C 1 -C 4直链或支链烷基。 制备式（1）或（2）的挥发性镍氨基醇氧化物配合物的方法包括Ni（NH 3）6 X 2的卤化六甲基镍化合物与MOCR'2（CH2）mNR2或MOCR'2（CH2）mNR2的氨基醇盐的碱金属盐 CH2）mO（CH2）nNR2，其中X是Cl，Br或I; M为Li或Na。 形成镍薄膜的方法包括使用式（1）或（2）的挥发性镍氨基醇氧化物配合物作为前体在250至350℃下生长镍薄膜。 C。

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