토크 센서
    1.
    发明公开
    토크 센서 无效
    扭矩传感器

    公开(公告)号:KR1020140067650A

    公开(公告)日:2014-06-05

    申请号:KR1020120135169

    申请日:2012-11-27

    CPC classification number: G01L3/02 G01L1/18 G01L1/26

    Abstract: The present invention relates to a torque sensor, which comprises: an upper case (110) in the shape of a cylinder whose one end is open; an overload prevention member (110) which is fixed and coupled to the upper case (100) to prevent overload; a lower case (120) which covers an opening part of the upper case (100); a elasticity structure member (130) which is located on the upper part of the lower case (120) to detect deformation; and a silicon structure member (140) which is located on the upper surface of the elasticity structure member (130) to detect deformation. By improving precision of strength and torque measurement through the silicon structure member (140) that includes a sensing part while connecting and integrating the elasticity structure member (130) with the silicon structure member (140), the present invention can be miniaturized to increase its marketability.

    Abstract translation: 扭矩传感器技术领域本发明涉及一种扭矩传感器,其特征在于,包括:一端敞开的气缸形状的上壳体(110) 一个过载防护件(110),其固定并联接到上壳体(100)以防止过载; 覆盖上壳体(100)的开口部的下壳体(120); 位于所述下壳体(120)的上部以检测变形的弹性结构构件(130); 以及位于弹性结构构件(130)的上表面上以检测变形的硅结构构件(140)。 通过在将弹性结构构件(130)与硅结构构件(140)连接并整合的同时通过包括感测部的硅结构构件(140)提高强度和扭矩测量的精度,本发明可以小型化以增加其 销路。

    스트레인게이지 타입의 힘-토크 센서 및 그 제조 방법
    2.
    发明公开
    스트레인게이지 타입의 힘-토크 센서 및 그 제조 방법 有权
    应变计类型力扭矩传感器及其制造方法

    公开(公告)号:KR1020130061902A

    公开(公告)日:2013-06-12

    申请号:KR1020110128212

    申请日:2011-12-02

    CPC classification number: G01L5/161

    Abstract: PURPOSE: A power-torque sensor of a strain gauge type and a manufacturing method thereof are provided to measure extension and compression with a unitized configuration. CONSTITUTION: A power-torque sensor of a strain gauge type(100) comprises a first sensor structure(110), a second sensor structure(120), and a gauge film(130). A convex portion is formed in the welded surface of the first sensor structure. A concave portion is formed in the welded surface of the second sensor structure. The welded surface of the second sensor structure with the concave portion is joined to the welded surface of the first sensor structure with the convex portion are welded while interposing the gauge film. The gauge film is formed into a structure that a strain gauge is installed on a flexible film and press-interposed by the concave and convex portions in between the welded surfaces of the first and second sensor structures.

    Abstract translation: 目的:提供一种应变仪型的功率转矩传感器及其制造方法,以一体化构造测量延伸和压缩。 构造:应变仪型(100)的功率转矩传感器包括第一传感器结构(110),第二传感器结构(120)和量规薄膜(130)。 在第一传感器结构的焊接表面中形成凸部。 在第二传感器结构的焊接表面中形成凹部。 具有凹部的第二传感器结构的焊接表面与第一传感器结构的焊接表面接合,同时在插入量规膜的同时焊接凸部。 量规薄膜形成为将应变计安装在柔性薄膜上并由第一和第二传感器结构的焊接表面之间的凹凸部压入的结构。

    정전용량 측정 방식의 소형 6축 힘-토크 센서
    3.
    发明公开
    정전용량 측정 방식의 소형 6축 힘-토크 센서 无效
    用于测量静电容量的6轴力矩传感器

    公开(公告)号:KR1020130049918A

    公开(公告)日:2013-05-15

    申请号:KR1020110114971

    申请日:2011-11-07

    CPC classification number: G01L1/14 B25J13/08 B25J19/02 G01L3/10

    Abstract: PURPOSE: A small 6 axial power-torque sensor of a capacitance measuring method is provided to measure a change of a capacitance value caused by a relative position change of an electrode for measuring capacitance, thereby improving the measurement accuracy of the sensor. CONSTITUTION: A small 6 axial power-torque sensor of a capacitance measuring method comprises a tool connector(10), a robot connector(20), and an elastic beam(30). The tool connector is connected to a terminal device unit. The robot connector is connected to a robot arm. The elastic bema is connected between the outer diameter of the tool connector and the inner diameter of the robot connector. An external slit(22) is penetrate-formed in the inner circumference of the robot connector adjacent to the outer end of the elastic beam. An internal slit(12) is penetrate-formed in the outer circumference of the robot connector adjacent to the inner end of the elastic beam. A range of the length of the elastic beam is within a section between the inner and outer slits. [Reference numerals] (AA) Cross section B-B

    Abstract translation: 目的:提供电容测量方法的小6轴向功率转矩传感器,以测量由用于测量电容的电极的相对位置变化引起的电容值的变化,从而提高传感器的测量精度。 构成:电容测量方法的小型6轴向功率转矩传感器包括工具连接器(10),机器人连接器(20)和弹性梁(30)。 工具连接器连接到终端设备单元。 机器人连接器连接到机器人手臂。 弹性体连接在工具连接器的外径和机器人连接器的内径之间。 外部狭缝(22)穿过形成在机器人连接器的内周上,邻近弹性束的外端。 在机器人连接器的外周中,与弹性梁的内端相邻的内部狭缝(12)穿透形成。 弹性梁的长度范围在内缝和外缝之间的一段内。 (附图标记)(AA)横截面B-B

    광학수단을 이용한 6축 힘-토크 센서
    4.
    发明公开
    광학수단을 이용한 6축 힘-토크 센서 无效
    6轴力矩传感器采用光学手段

    公开(公告)号:KR1020130048321A

    公开(公告)日:2013-05-10

    申请号:KR1020110113101

    申请日:2011-11-02

    Inventor: 이희원 권순명

    CPC classification number: G01L3/08 B25J13/08 B25J19/02 G01L5/226

    Abstract: PURPOSE: A six axial power-torque sensor using an optical member is provided to calculate power and torque by measuring the deformation of elastic beams with the optical member comprised of a light emitting unit and a light receiving unit or an image sensor and specific patterns, thereby improving the accuracy of measuring the power and the torque. CONSTITUTION: A six axial power-torque sensor using an optical member(50) comprises a tool connecting body(10) connected to a terminal unit, a robot connecting body(20) connected to a robot, and a plurality of elastic beams(30) connected between the tool connecting body and the robot connecting body. A cover(40) covering the elastic beams is mounted in the outer periphery of the robot connecting body to be integrated. The optical members sensing changes in positions of the elastic beams are mounted in the cover and the elastic beams.

    Abstract translation: 目的:提供使用光学构件的六轴向动力转矩传感器,通过测量由发光单元和光接收单元或图像传感器构成的光学构件或特定图案的弹性梁的变形来计算功率和扭矩, 从而提高了功率和转矩的测量精度。 构成:使用光学构件(50)的六轴向动力转矩传感器包括连接到终端单元的工具连接体(10),连接到机器人的机器人连接体(20)和多个弹性梁(30 )连接在工具连接体和机器人连接体之间。 覆盖弹性梁的盖(40)安装在机器人连接体的外周边以便一体化。 感测弹性梁的位置变化的光学构件安装在盖和弹性梁中。

    반도체 기판의 접합 방법
    5.
    发明授权
    반도체 기판의 접합 방법 有权
    半导体衬底的连接方法

    公开(公告)号:KR101542965B1

    公开(公告)日:2015-08-07

    申请号:KR1020130167810

    申请日:2013-12-30

    Abstract: 본발명의일 실시예에따른반도체기판의접합방법은제1 반도체기판위에정렬키를형성하는단계, 상기제1 반도체기판및 상기정렬키 위에절연막을형성하는단계, 상기절연막위에제1 금속층패턴및 제2 금속층패턴을형성하는단계, 제2 반도체기판위에제1 돌출부, 제2 돌출부및 상기제1 돌출부와상기제2 돌출부사이에위치하는정렬홈을형성하는단계, 상기제1 돌출부및 상기제2 돌출부위에각각제3 금속층패턴및 제4 금속층패턴을형성하는단계, 그리고상기제1 반도체기판및 상기제2 반도체기판을접합하는단계를포함하고, 상기제1 반도체기판및 상기제2 반도체기판의접합시, 상기정렬키는상기정렬홈에위치한다.

    스위칭 타입 육축 힘 토크 센서 및 이를 이용한 육축 힘 토크 측정장치
    6.
    发明公开
    스위칭 타입 육축 힘 토크 센서 및 이를 이용한 육축 힘 토크 측정장치 有权
    切换类型6轴传感器和使用它的测量装置

    公开(公告)号:KR1020150076844A

    公开(公告)日:2015-07-07

    申请号:KR1020130165489

    申请日:2013-12-27

    CPC classification number: G01L5/167 G01L1/16 G01L1/22 G01L3/108 G01L5/162

    Abstract: 스위칭타입육축센서가개시된다. 스위칭타입육축센서는, 측정하고자하는구조물에부착되는센서기재와, 센서기재의중앙부를기준으로일측으로설치되며, 변형율을측정하는제1 측정부와, 중앙부를기준으로제1 측정부에대향하는위치에서센서기재상에설치되어, 변형율을측정하는제2 측정부와, 제1 측정부와제2 측정부를연결한연결선에직교하는위치에설치되어변형율을측정하는제3 측정부와, 중앙부를기준으로제3 측정부에대향하는위치에설치되어변형율을측정하는제4 측정부를포함한다.

    Abstract translation: 公开了一种开关式六轴功率转矩传感器。 开关式六轴功率转矩传感器包括:附接到测量目标结构的传感器基材; 第一测量部件,围绕传感器基材的中心安装在一侧以测量应变; 第二测量部件,安​​装在所述传感器基材的与所述传感器基材的中心相邻的所述第一测量部件的相对侧,以测量应变; 第三测量部件,安​​装在垂直于连接线的位置处,用于连接第一和第二测量部件以测量应变; 以及第四测量部件,安​​装在与中心周围的第三测量部件相对的位置处,以测量应变。

    반도체 소자의 트렌치 형성 방법
    7.
    发明公开
    반도체 소자의 트렌치 형성 방법 无效
    形成半导体器件的光束的方法

    公开(公告)号:KR1020130063089A

    公开(公告)日:2013-06-14

    申请号:KR1020110129409

    申请日:2011-12-06

    Inventor: 이희원 한창완

    Abstract: PURPOSE: A method for forming the trench of a semiconductor device is provided to secure a U-shaped trench by using a double etching process consisting of a preliminary process and a main etching process without the generation of a corner pit. CONSTITUTION: A preliminary etching mask(22) is formed to expose the center part of a trench formation region in the surface of a semiconductor wafer(10). A preliminary etching process is performed on the exposed surface of the semiconductor wafer by using the preliminary etching mask with a first etch depth. The preliminary etching mask is removed. A main etching mask(23,24) is formed to expose the trench formation region. An additional main etching process is performed on the exposed semiconductor wafer by using the main etching mask with a preset trench formation depth. [Reference numerals] (AA) Preliminary etching region; (BB) Preliminary etching depth; (CC) Trench forming depth; (DD) Trench forming region

    Abstract translation: 目的:提供一种用于形成半导体器件的沟槽的方法,通过使用由初步工艺和主蚀刻工艺组成的双重蚀刻工艺而不产生角坑来固定U形沟槽。 构成:形成初步蚀刻掩模(22)以暴露半导体晶片(10)的表面中的沟槽形成区域的中心部分。 通过使用具有第一蚀刻深度的预蚀刻掩模,对半导体晶片的暴露表面进行初步蚀刻处理。 去除初步蚀刻掩模。 形成主蚀刻掩模(23,24)以暴露沟槽形成区域。 通过使用具有预设沟槽形成深度的主蚀刻掩模,在暴露的半导体晶片上执行附加的主蚀刻工艺。 (附图标记)(AA)初步蚀刻区域; (BB)初步蚀刻深度; (CC)沟槽成形深度; (DD)沟槽形成区域

    멤스 센서의 웨이퍼 레벨 패키지 및 그 제조 방법
    8.
    发明授权
    멤스 센서의 웨이퍼 레벨 패키지 및 그 제조 방법 有权
    MEMS传感器的WAFER LEVEL PAKAGE及其制造方法

    公开(公告)号:KR101210138B1

    公开(公告)日:2012-12-07

    申请号:KR1020100115340

    申请日:2010-11-19

    Abstract: 본발명은멤스센서웨이퍼레벨패키지및 그제조방법에관한것으로, 멤스센서의밀봉효과를최대화하며, 상부글라스내에상부공동전극을형성함으로써멤스센서의내부와외부의전기적연결이우수한멤스센서의웨이퍼레벨패키지를제공하는기술이다. 본발명에따른멤스센서웨이퍼레벨패키지제조방법은하부글라스및 상부글라스상부에각각하부공동전극및 상부공동전극을형성하는단계와, 상부글라스내에비아홀을형성하는단계와, 하부글라스상부에멤스구조물을형성하는단계와, 하부글라스상부의가장자리에외곽프레임을형성하는단계와, 외곽프레임상부에상기상부글라스를본딩시키는단계를포함하는것을특징으로한다.

    멤스 센서의 웨이퍼 레벨 패키지 및 그 제조 방법
    9.
    发明公开
    멤스 센서의 웨이퍼 레벨 패키지 및 그 제조 방법 有权
    MEMS传感器的WAFER LEVEL PAKAGE及其制造方法

    公开(公告)号:KR1020120054126A

    公开(公告)日:2012-05-30

    申请号:KR1020100115340

    申请日:2010-11-19

    CPC classification number: B81B7/007 H01L23/15 H01L23/481

    Abstract: PURPOSE: A wafer level package of a MEMS sensor and a manufacturing method thereof are provided to improve electrical contact reliability of the internal side and external side of the MEMS sensor by forming a top cooperation electrode within top glass. CONSTITUTION: A top cooperation electrode and a bottom cooperation electrode are respectively formed on the upper side of bottom glass and top glass(210). Via hole is formed within the top glass. A MEMS(Micro-electro-mechanical system) structure(230) is formed on the upper side of the bottom glass. An outer frame(235) is formed on the edge of the upper side of the bottom glass. The top glass is bonded to the upper side of the outer frame. A contact pad is formed on the upper side of the MEMS structure. The via hole exposes the contact pad formed on the upper side of the MEMS structure.

    Abstract translation: 目的:提供MEMS传感器的晶片级封装及其制造方法,以通过在顶部玻璃内形成顶部配合电极来改善MEMS传感器的内侧和外侧的电接触可靠性。 构成:顶部配合电极和底部配合电极分别形成在底部玻璃和顶部玻璃(210)的上侧。 通孔形成在顶玻璃内。 在底玻璃的上侧形成MEMS(微电子机械系统)结构(230)。 外框架(235)形成在底玻璃的上侧的边缘上。 顶部玻璃结合到外框架的上侧。 接触垫形成在MEMS结构的上侧。 通孔露出形成在MEMS结构的上侧的接触焊盘。

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