公开(公告)号：EP2940025A4

公开(公告)日：2016-09-14

申请号：EP13869190

申请日：2013-11-26

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F5/06 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

公开(公告)号：EP2921472A4

公开(公告)日：2016-06-15

申请号：EP13854668

申请日：2013-10-21

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YAMADA NAOKI ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C23C16/16 ,  C23C16/40 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：EP2407576A4

公开(公告)日：2013-02-20

申请号：EP10750648

申请日：2010-02-15

Applicant: ADEKA CORP

Inventor： SHIRATORI TSUBASA ,  WATANABE TSUYOSHI ,  ENOMOTO YOSHIJI

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28562 ,  C23C16/4402 ,  C23C16/4482 ,  C23C16/45534 ,  H01L21/28194 ,  H01L28/55

Abstract: The present process for removing residual water molecules is suitably used in a metallic thin film production method of forming a metallic thin film on a substrate. The residual-water-molecule removal process involves removing residual water molecules using a gas generated by vaporizing a purge solvent. Preferably, the purge solvent is an organic solvent or an organic solvent composition having a water content at the azeotropic composition of at least 20% by mass. With the present residual-water-molecule removal process, water molecules remaining in the system can be removed efficiently in the production of metallic thin films by the ALD method or the like, and thus, the film-formation time can be shortened and metallic thin films can be produced efficiently.

公开(公告)号：JP2015054853A

公开(公告)日：2015-03-23

申请号：JP2013190271

申请日：2013-09-13

Applicant: 株式会社Adeka ,  Adeka Corp ,  株式会社Adeka

Inventor： SATO HIROKI ,  TONO TAKASHI ,  SHIRATORI TSUBASA ,  NISHIDA AKIHIRO

IPC: C07F19/00 ,  C07F7/10 ,  C07F9/24 ,  C07F9/46 ,  C07F9/48 ,  C07F9/50 ,  C23C16/42 ,  H01L21/316 ,  H01L21/318

Abstract: 【課題】熱安定性が高く、反応性ガスとの反応性に優れ、かつ段差被覆性に優れるALD法に適用できる薄膜形成用原料を提供する。また、リン含有量が10〜20質量%である薄膜を得ることができる薄膜形成用原料を提供する。【解決手段】薄膜形成用原料は、下記一般式(1)で表されるケイ素化合物を含有する。(式中、R1〜R3は各々独立に炭素数1〜4のアルキル基を表し、Xはリン元素を含有する一価の有機残基を表す。)【選択図】なし

Abstract translation: 要解决的问题：提供一种用于形成热稳定性，与反应气体的反应性和阶梯覆盖性优异的薄膜的原料，并且能够应用于ALD方法，并提供用于形成薄膜的原料 提供磷含量为10〜20质量％的薄膜。溶液：用于形成薄膜的原料具有由通式（1）表示的硅化合物。 式（1）中，Rto R独立地表示碳原子数1〜4的烷基，X表示具有磷元素的一价有机残基。

公开(公告)号：JP2019004138A

公开(公告)日：2019-01-10

申请号：JP2018088321

申请日：2018-05-01

Applicant: SAMSUNG ELECTRONICS CO LTD ,  ADEKA CORP

Inventor： LEE SO YOUNG ,  LIM JAE-SOON ,  YUN JI EUN ,  SAITO AKIO ,  SHIRATORI TSUBASA ,  AOKI YUTARO

IPC: H01L21/285 ,  C23C16/18

Abstract: 【課題】蒸着工程に適合であり、半導体素子の劣化を防止することができるタングステン前駆体を提供する。【解決手段】下記式で表記されるタングステン前駆体とする。【選択図】図1

公开(公告)号：JP2013166965A

公开(公告)日：2013-08-29

申请号：JP2012029212

申请日：2012-02-14

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： NISHIDA AKIHIRO ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  SHIRATORI TSUBASA

IPC: C23C16/34 ,  C23C16/18 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a thin film suitable for forming an aluminum nitride-based thin film by a chemical vapor deposition method and a method for producing the thin film excellent in productivity and capable of safely producing the good-quality aluminum nitride-based thin film.SOLUTION: A material for forming an aluminum nitride-based thin film contains an aluminum compound represented by chemical formula (I). In a method for producing the thin film, vapor containing the aluminum compound is obtained by evaporating the material for forming the thin film, the vapor is introduced into a deposition chamber in which a substrate is placed, and the aluminum nitride-based thin film is formed on the surface of the substrate by the degradation and/or chemical reaction of the aluminum compound.

Abstract translation: 要解决的问题：提供一种用于通过化学气相沉积法形成适合于形成氮化铝基薄膜的薄膜的材料，以及生产率优异且能够安全地生产优质的薄膜的制造方法 氮化铝基薄膜。解决方案：用于形成氮化铝基薄膜的材料含有由化学式（I）表示的铝化合物。 在制造薄膜的方法中，通过蒸发用于形成薄膜的材料获得含有铝化合物的蒸气，蒸气被引入其中放置基板的沉积室中，并且氮化铝基薄膜是 通过铝化合物的降解和/或化学反应在基材的表面上形成。

公开(公告)号：JP2011047701A

公开(公告)日：2011-03-10

申请号：JP2009194536

申请日：2009-08-25

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SHIMADA SADASUKE ,  NISHIDA AKIHIRO ,  SHIRATORI TSUBASA ,  SUZUKI SHINICHI

IPC: G01N21/01 ,  C23C16/448 ,  C23C16/52 ,  G01N21/35 ,  G01N21/3577 ,  G01N21/359

Abstract: PROBLEM TO BE SOLVED: To provide a method of measuring one portion or entire portion of effective constituents of a thin-film material composition that is a composition of not less than two constituents used for forming a thin film of a metal-containing material and contains at least one type of metal compound and other compounds as effective constituents. SOLUTION: In the method of measuring constituents, spectrum absorption by a near infrared spectroscopy is used as a method of measuring active constituents suitable for measuring constituents in a manufacturing process of a thin film for a thin-film material composition. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种测量薄膜材料组合物的有效成分的一部分或全部的方法，该薄膜材料组合物是用于形成含金属的薄膜的不少于两种成分的组合物 并且含有至少一种类型的金属化合物和其它化合物作为有效成分。 解决方案：在测量成分的方法中，使用近红外光谱的光谱吸收作为测量薄膜材料组合物薄膜制造过程中适用于测量成分的活性成分的方法。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2017114850A

公开(公告)日：2017-06-29

申请号：JP2016234316

申请日：2016-12-01

Applicant: 三星電子株式会社Samsung Electronics Co.,Ltd. ,  Samsung Electronics Co Ltd ,  三星電子株式会社Samsung Electronics Co.,Ltd. ,  株式会社Adeka ,  Adeka Corp ,  株式会社Adeka

Inventor： RYU SEUNG-MIN ,  LIM JAE-SOON ,  CHO YOUN-JOUNG ,  KOIDE YUKINOBU ,  YAMADA NAOKI ,  SHIRATORI TSUBASA

IPC: C07F9/00 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L27/108 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L21/02183 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  H01L21/0215 ,  H01L21/0228 ,  H01L21/823443 ,  H01L28/00

Abstract: 【課題】タンタル化合物、及びそれを利用した薄膜形成方法、並びに集積回路素子の製造方法の提供。【解決手段】式(I)で表されるタンタル化合物を利用する薄膜形成方法。[R1、R3及びR4は夫独立して、C1−10の直鎖/分岐型のアルキル基、アルケニル基等;R2はH、C1−10の直鎖/分岐型のアルキル基、アルケニル基、等]【選択図】図1

公开(公告)号：JP2014005242A

公开(公告)日：2014-01-16

申请号：JP2012142927

申请日：2012-06-26

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： HATASE MASAKO ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA

IPC: C07F5/06 ,  C23C16/40 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide: an aluminum compound with a low melting point, sufficient volatility and high thermal stability; a raw material for thin film formation containing the same; and a method of producing a thin film by using the raw material.SOLUTION: Provided are an aluminum compound represented by the specified general formula (I), a raw material for thin film formation containing the aluminum compound, and a method of producing a thin film. The method comprises: vaporizing the raw material for thin film formation to obtain vapor containing the aluminum compound; introducing the vapor into a deposition chamber in which a substrate is placed; and subjecting the aluminum compound to decomposition and/or chemical reaction to form a thin film containing aluminum on a surface of the substrate.

Abstract translation: 要解决的问题：提供：具有低熔点，足够的挥发性和高热稳定性的铝化合物; 含有该薄膜的薄膜的原料; 以及通过使用原料制造薄膜的方法。溶液：提供由特定通式（I）表示的铝化合物，含有铝化合物的薄膜形成用原料，以及制造薄膜的方法 电影。 该方法包括：蒸发用于薄膜形成的原料以获得含有铝化合物的蒸气; 将蒸汽引入其中放置基底的沉积室中; 并对铝化合物进行分解和/或化学反应，以在基板的表面上形成含有铝的薄膜。

公开(公告)号：JP2013145787A

公开(公告)日：2013-07-25

申请号：JP2012004965

申请日：2012-01-13

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SHIMIZU MASAKO ,  YAMADA NAOKI ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA

IPC: H01L21/316 ,  C07F5/06 ,  C23C16/40

CPC classification number: C07F5/063 ,  C07F5/066 ,  C23C16/403 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/0228

Abstract: PROBLEM TO BE SOLVED: To provide aluminum compound which is not pyrophoric, is a liquid at room temperature, exhibits sufficient volatility and has high thermal stability; a starting material for forming a thin film containing the same; and a method for producing a thin film using the starting material.SOLUTION: Provided are: an aluminum compound represented by the specified chemical formula (I); a starting material for forming a thin film, which contains the aluminum compound; and a method for producing a thin film. In the method: a vapor which is obtained by vaporizing the starting material for forming a thin film and contains the aluminum compound is introduced into a film formation chamber in which a base is disposed; and the aluminum compound is decomposed and/or subjected to a chemical reaction so that a thin film containing aluminum is formed on the surface of the base.

Abstract translation: 要解决的问题：提供不是自燃的铝化合物，在室温下是液体，具有足够的挥发性并具有高的热稳定性; 用于形成含有该起始材料的薄膜的原料; 以及使用原料制造薄膜的方法。解决方案：提供：由特定化学式（I）表示的铝化合物; 用于形成含有铝化合物的薄膜的起始材料; 以及薄膜的制造方法。 在该方法中，通过汽化用于形成薄膜并含有铝化合物的原料而获得的蒸气被引入其中设置有基底的成膜室; 并且铝化合物分解和/或进行化学反应，使得在基材的表面上形成含有铝的薄膜。