公开(公告)号：KR20180022775A

公开(公告)日：2018-03-06

申请号：KR20187000230

申请日：2016-05-17

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  NISHIDA AKIHIRO ,  SUGIURA NANA

IPC: C07F15/06 ,  C23C16/18 ,  H01L21/285

CPC classification number: C23C16/18 ,  C07F13/00 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C07F15/065 ,  H01L21/285

Abstract: 본발명의신규화합물은, 하기일반식 (I) 또는 (II)로나타내어지는것을특징으로한다: [화학식 1][식중, R및 R는, 각각독립적으로탄소원자수 1 ~ 12의탄화수소기를나타내며, 그탄화수소기의수소원자는 Si(R)으로치환되어있는경우도있다. 단, R과 R는상이한기이다. R은, 메틸기또는에틸기를나타내며, M은, 금속원자또는규소원자를나타내며, n은 1 ~ 4의정수를나타낸다.]

Abstract translation: 本发明的新型化合物的特征在于由以下通式（I）或（II）表示：其中R和R各自独立地表示具有1至12个碳原子的烃基， 该烃基的氢原子可以被Si（R）取代。 只要R和R是不同的基团。 R表示甲基或乙基，M表示金属原子或硅原子，n表示1〜4的数。

公开(公告)号：EP3144313A4

公开(公告)日：2017-12-06

申请号：EP15792769

申请日：2015-03-31

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F15/06 ,  C23C16/18 ,  C23C16/44

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R 1 to R 3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

公开(公告)号：EP3144293A4

公开(公告)日：2018-01-03

申请号：EP15793276

申请日：2015-04-08

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  SAKURAI ATSUSHI ,  NISHIDA AKIHIRO ,  OKABE MAKOTO

IPC: C07C215/08 ,  C07F1/08 ,  C23C16/18 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：EP2940025A4

公开(公告)日：2016-09-14

申请号：EP13869190

申请日：2013-11-26

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F5/06 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

公开(公告)号：JP2015054853A

公开(公告)日：2015-03-23

申请号：JP2013190271

申请日：2013-09-13

Applicant: 株式会社Adeka ,  Adeka Corp ,  株式会社Adeka

Inventor： SATO HIROKI ,  TONO TAKASHI ,  SHIRATORI TSUBASA ,  NISHIDA AKIHIRO

IPC: C07F19/00 ,  C07F7/10 ,  C07F9/24 ,  C07F9/46 ,  C07F9/48 ,  C07F9/50 ,  C23C16/42 ,  H01L21/316 ,  H01L21/318

Abstract: 【課題】熱安定性が高く、反応性ガスとの反応性に優れ、かつ段差被覆性に優れるALD法に適用できる薄膜形成用原料を提供する。また、リン含有量が10〜20質量%である薄膜を得ることができる薄膜形成用原料を提供する。【解決手段】薄膜形成用原料は、下記一般式(1)で表されるケイ素化合物を含有する。(式中、R1〜R3は各々独立に炭素数1〜4のアルキル基を表し、Xはリン元素を含有する一価の有機残基を表す。)【選択図】なし

Abstract translation: 要解决的问题：提供一种用于形成热稳定性，与反应气体的反应性和阶梯覆盖性优异的薄膜的原料，并且能够应用于ALD方法，并提供用于形成薄膜的原料 提供磷含量为10〜20质量％的薄膜。溶液：用于形成薄膜的原料具有由通式（1）表示的硅化合物。 式（1）中，Rto R独立地表示碳原子数1〜4的烷基，X表示具有磷元素的一价有机残基。

公开(公告)号：JP2013166965A

公开(公告)日：2013-08-29

申请号：JP2012029212

申请日：2012-02-14

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： NISHIDA AKIHIRO ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  SHIRATORI TSUBASA

IPC: C23C16/34 ,  C23C16/18 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a thin film suitable for forming an aluminum nitride-based thin film by a chemical vapor deposition method and a method for producing the thin film excellent in productivity and capable of safely producing the good-quality aluminum nitride-based thin film.SOLUTION: A material for forming an aluminum nitride-based thin film contains an aluminum compound represented by chemical formula (I). In a method for producing the thin film, vapor containing the aluminum compound is obtained by evaporating the material for forming the thin film, the vapor is introduced into a deposition chamber in which a substrate is placed, and the aluminum nitride-based thin film is formed on the surface of the substrate by the degradation and/or chemical reaction of the aluminum compound.

Abstract translation: 要解决的问题：提供一种用于通过化学气相沉积法形成适合于形成氮化铝基薄膜的薄膜的材料，以及生产率优异且能够安全地生产优质的薄膜的制造方法 氮化铝基薄膜。解决方案：用于形成氮化铝基薄膜的材料含有由化学式（I）表示的铝化合物。 在制造薄膜的方法中，通过蒸发用于形成薄膜的材料获得含有铝化合物的蒸气，蒸气被引入其中放置基板的沉积室中，并且氮化铝基薄膜是 通过铝化合物的降解和/或化学反应在基材的表面上形成。

公开(公告)号：JP2011047701A

公开(公告)日：2011-03-10

申请号：JP2009194536

申请日：2009-08-25

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： SHIMADA SADASUKE ,  NISHIDA AKIHIRO ,  SHIRATORI TSUBASA ,  SUZUKI SHINICHI

IPC: G01N21/01 ,  C23C16/448 ,  C23C16/52 ,  G01N21/35 ,  G01N21/3577 ,  G01N21/359

Abstract: PROBLEM TO BE SOLVED: To provide a method of measuring one portion or entire portion of effective constituents of a thin-film material composition that is a composition of not less than two constituents used for forming a thin film of a metal-containing material and contains at least one type of metal compound and other compounds as effective constituents. SOLUTION: In the method of measuring constituents, spectrum absorption by a near infrared spectroscopy is used as a method of measuring active constituents suitable for measuring constituents in a manufacturing process of a thin film for a thin-film material composition. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种测量薄膜材料组合物的有效成分的一部分或全部的方法，该薄膜材料组合物是用于形成含金属的薄膜的不少于两种成分的组合物 并且含有至少一种类型的金属化合物和其它化合物作为有效成分。 解决方案：在测量成分的方法中，使用近红外光谱的光谱吸收作为测量薄膜材料组合物薄膜制造过程中适用于测量成分的活性成分的方法。 版权所有（C）2011，JPO＆INPIT