公开(公告)号：EP3144313A4

公开(公告)日：2017-12-06

申请号：EP15792769

申请日：2015-03-31

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  ENZU MASAKI ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F15/06 ,  C23C16/18 ,  C23C16/44

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R 1 to R 3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

公开(公告)号：EP3178808A4

公开(公告)日：2018-03-21

申请号：EP15829762

申请日：2015-07-16

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YOSHINO TOMOHARU ,  ENZU MASAKI

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/06 ,  C23C16/18 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/0818 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/285

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I) :

公开(公告)号：EP2921472A4

公开(公告)日：2016-06-15

申请号：EP13854668

申请日：2013-10-21

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YAMADA NAOKI ,  SHIRATORI TSUBASA ,  SAITO AKIO ,  YOSHINO TOMOHARU

IPC: C07C251/08 ,  C07F1/08 ,  C07F15/04 ,  C07F15/06 ,  C23C16/16 ,  C23C16/40 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：EP3135664A4

公开(公告)日：2017-11-01

申请号：EP15782391

申请日：2015-03-30

Applicant: ADEKA CORP

Inventor： SAKURAI ATSUSHI ,  HATASE MASAKO ,  YOSHINO TOMOHARU ,  ENZU MASAKI

IPC: C07C251/08 ,  C07F15/06 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC classification number: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285 ,  H01L21/28556 ,  H01L21/28568

公开(公告)号：EP2940025A4

公开(公告)日：2016-09-14

申请号：EP13869190

申请日：2013-11-26

Applicant: ADEKA CORP

Inventor： YOSHINO TOMOHARU ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA ,  HATASE MASAKO ,  UCHIUZOU HIROYUKI ,  NISHIDA AKIHIRO

IPC: C07F5/06 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

公开(公告)号：JP2014165496A

公开(公告)日：2014-09-08

申请号：JP2014031269

申请日：2014-02-21

Applicant: Samsung Electronics Co Ltd ,  三星電子株式会社Samsung Electronics Co.,Ltd. ,  Adeka Corp ,  株式会社Adeka

Inventor： YOUN SANG-CHUL ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  CHO YOUN JOUNG ,  KANG JI-NA ,  YAMADA NAOKI ,  CHOI JUNG-SIK

IPC: H01L21/316 ,  C07C31/32 ,  C07C49/92 ,  C07F5/06 ,  C23C16/18 ,  C23C16/40 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01G4/33 ,  H01G4/085 ,  H01G4/1272 ,  H01L27/10852 ,  H01L28/40

Abstract: PROBLEM TO BE SOLVED: To provide an aluminum precursor with high thermal stability, and a thin film formation method and a capacitor formation method using the same.SOLUTION: An aluminum precursor is represented by the specified formula (1). The aluminum precursor can be used for easily forming a thin film in an opening having a high aspect ratio, and can be suitably used for forming a dielectric film of a capacitor.

Abstract translation: 要解决的问题：提供具有高热稳定性的铝前体，以及使用其的薄膜形成方法和电容器形成方法。解决方案：铝前体由指定的式（1）表示。 铝前体可以用于在具有高纵横比的开口中容易地形成薄膜，并且可以适用于形成电容器的电介质膜。

公开(公告)号：JP2013166965A

公开(公告)日：2013-08-29

申请号：JP2012029212

申请日：2012-02-14

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： NISHIDA AKIHIRO ,  SAKURAI ATSUSHI ,  HATASE MASAKO ,  SHIRATORI TSUBASA

IPC: C23C16/34 ,  C23C16/18 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a thin film suitable for forming an aluminum nitride-based thin film by a chemical vapor deposition method and a method for producing the thin film excellent in productivity and capable of safely producing the good-quality aluminum nitride-based thin film.SOLUTION: A material for forming an aluminum nitride-based thin film contains an aluminum compound represented by chemical formula (I). In a method for producing the thin film, vapor containing the aluminum compound is obtained by evaporating the material for forming the thin film, the vapor is introduced into a deposition chamber in which a substrate is placed, and the aluminum nitride-based thin film is formed on the surface of the substrate by the degradation and/or chemical reaction of the aluminum compound.

Abstract translation: 要解决的问题：提供一种用于通过化学气相沉积法形成适合于形成氮化铝基薄膜的薄膜的材料，以及生产率优异且能够安全地生产优质的薄膜的制造方法 氮化铝基薄膜。解决方案：用于形成氮化铝基薄膜的材料含有由化学式（I）表示的铝化合物。 在制造薄膜的方法中，通过蒸发用于形成薄膜的材料获得含有铝化合物的蒸气，蒸气被引入其中放置基板的沉积室中，并且氮化铝基薄膜是 通过铝化合物的降解和/或化学反应在基材的表面上形成。

公开(公告)号：JP2014005242A

公开(公告)日：2014-01-16

申请号：JP2012142927

申请日：2012-06-26

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： HATASE MASAKO ,  SAKURAI ATSUSHI ,  SHIRATORI TSUBASA

IPC: C07F5/06 ,  C23C16/40 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide: an aluminum compound with a low melting point, sufficient volatility and high thermal stability; a raw material for thin film formation containing the same; and a method of producing a thin film by using the raw material.SOLUTION: Provided are an aluminum compound represented by the specified general formula (I), a raw material for thin film formation containing the aluminum compound, and a method of producing a thin film. The method comprises: vaporizing the raw material for thin film formation to obtain vapor containing the aluminum compound; introducing the vapor into a deposition chamber in which a substrate is placed; and subjecting the aluminum compound to decomposition and/or chemical reaction to form a thin film containing aluminum on a surface of the substrate.

Abstract translation: 要解决的问题：提供：具有低熔点，足够的挥发性和高热稳定性的铝化合物; 含有该薄膜的薄膜的原料; 以及通过使用原料制造薄膜的方法。溶液：提供由特定通式（I）表示的铝化合物，含有铝化合物的薄膜形成用原料，以及制造薄膜的方法 电影。 该方法包括：蒸发用于薄膜形成的原料以获得含有铝化合物的蒸气; 将蒸汽引入其中放置基底的沉积室中; 并对铝化合物进行分解和/或化学反应，以在基板的表面上形成含有铝的薄膜。