THIN-FILM FORMING RAW MATERIAL USED IN ATOMIC LAYER DEPOSITION METHOD AND METHOD OF PRODUCING THIN-FILM

    公开(公告)号:US20250109296A1

    公开(公告)日:2025-04-03

    申请号:US18978671

    申请日:2024-12-12

    Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following formula (1): where R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom; where R11 and R12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1); where R21 to R23 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R21 and R22 represent different groups.

    THIN-FILM FORMING RAW MATERIAL, METHOD OF PRODUCING THIN-FILM, THIN-FILM, AND MOLYBDENUM COMPOUND

    公开(公告)号:US20240425975A1

    公开(公告)日:2024-12-26

    申请号:US18695108

    申请日:2022-09-20

    Abstract: A thin-film forming raw material contains a molybdenum compound represented by the following general formula (1), a method of forming a thin-film through use of the thin-film forming raw material, and a molybdenum compound having a specific structure: where R1 represents an alkyl group having 1 to 5 carbon atoms or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, L1 represents a group represented by the following general formula (L-1) or (L-2), and “n” represents an integer of from 1 to 4, provided that when “n” represents 4, R1 represents a fluorine atom-containing alkyl group having 1 to 5 carbon atoms; where R2 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, and * represents a bonding site.

    ZINC COMPOUND, THIN-FILM FORMING RAW MATERIAL, THIN-FILM, AND METHOD OF PRODUCING THIN-FILM

    公开(公告)号:US20230142848A1

    公开(公告)日:2023-05-11

    申请号:US17915300

    申请日:2021-03-18

    CPC classification number: C07F3/06 C23C16/407 C23C16/45553

    Abstract: Provided is a zinc compound represented by the following general formula (1) or (2):




    in the formula (1), R1 represents an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., R2 and R5 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R3 and R4 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.;




    in the formula (2), R10, R11, R14, and R15 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R9, R12, R13, and R16 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.

    THIN-FILM FORMING RAW MATERIAL USED IN ATOMIC LAYER DEPOSITION METHOD AND METHOD OF PRODUCING THIN-FILM

    公开(公告)号:US20230151220A1

    公开(公告)日:2023-05-18

    申请号:US17915270

    申请日:2021-03-18

    CPC classification number: C09D1/00 C07F5/00 C23C16/40 C23C16/407 C23C16/45525

    Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented, by the following formula (1) :





    where R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom;





    where R11 and R12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1);





    where R21 to R23 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R21 and R22 represent different groups.

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