公开(公告)号：US20230151041A1

公开(公告)日：2023-05-18

申请号：US17917671

申请日：2021-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Yoshiki OOE ,  Keisuke TAKEDA ,  Ryota FUKUSHIMA ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C01B33/027 ,  C07F7/22 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455

CPC classification number: C07F15/065 ,  C01B33/027 ,  C07F7/2284 ,  C23C16/18 ,  C23C16/407 ,  C23C16/45553

Abstract: The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material:




where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

公开(公告)号：US20240318304A1

公开(公告)日：2024-09-26

申请号：US18575951

申请日：2022-06-27

Applicant: ADEKA CORPORATION

Inventor： Chiaki MITSUI ,  Masako HATASE

IPC: C23C16/18

CPC classification number: C23C16/18

Abstract: A compound is represented by the following general formula (1), a thin-film forming raw material including the compound, a thin-film, and a method of producing a thin-film:






wherein R1 to R4 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R5 and R6 each independently represent an alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 5 carbon atoms, L represents a group represented by the general formula (L-1) or (L-2) described herein, and M represents a hafnium atom, a zirconium atom, or a titanium atom, provided that in a case of a compound in which R5 and R6 each represent a methyl group, A represents an alkanediyl group having 2 carbon atoms, and M represents a titanium atom, L represents a group represented by the general formula (L-2).

公开(公告)号：US20240018654A1

公开(公告)日：2024-01-18

申请号：US18036975

申请日：2021-11-16

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

IPC: C23C16/455 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C23C16/405

Abstract: Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate:




wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms, provided that a zirconium compound in which both of R1 and R2 represent hydrogen atoms is excluded.

公开(公告)号：US20240167154A1

公开(公告)日：2024-05-23

申请号：US18280559

申请日：2022-02-24

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Yoshiki OOE ,  Keisuke TAKEDA ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/45527

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1):


M(R1)x1[A1-N(R2)(R3)]y1   (1)

in the formula (1), R1, R2, and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents an indium atom or a zinc atom, provided that when M represents an indium atom, a compound in which x1 represents 2, y1 represents 1, and R1, R2, and R3 each represent a methyl group is excluded.

公开(公告)号：US20240018655A1

公开(公告)日：2024-01-18

申请号：US18037206

申请日：2021-11-16

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

IPC: C23C16/455 ,  C07F7/00 ,  C01G27/02 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C07F7/003 ,  C01G27/02 ,  C23C16/45527 ,  C23C16/405 ,  H01L21/02181

Abstract: Provided is a method of producing a thin-film containing a hafnium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a hafnium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 300° C. or more and less than 450° C. to form the thin-film containing a hafnium atom on the surface of the substrate:






wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms.

公开(公告)号：US20250019820A1

公开(公告)日：2025-01-16

申请号：US18708639

申请日：2022-11-07

Applicant: ADEKA CORPORATION

Inventor： Ryota FUKUSHIMA ,  Masaki ENZU ,  Chiaki MITSUI ,  Nana OKADA ,  Masako HATASE

IPC: C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a ruthenium compound represented by the following general formula (1): wherein R1 represents a hydrogen atom or a methyl group, and R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US20240425975A1

公开(公告)日：2024-12-26

申请号：US18695108

申请日：2022-09-20

Applicant: ADEKA CORPORATION

Inventor： Masako HATASE ,  Keisuke TAKEDA ,  Chiaki MITSUI

IPC: C23C16/18 ,  C07F11/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

Abstract: A thin-film forming raw material contains a molybdenum compound represented by the following general formula (1), a method of forming a thin-film through use of the thin-film forming raw material, and a molybdenum compound having a specific structure: where R1 represents an alkyl group having 1 to 5 carbon atoms or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, L1 represents a group represented by the following general formula (L-1) or (L-2), and “n” represents an integer of from 1 to 4, provided that when “n” represents 4, R1 represents a fluorine atom-containing alkyl group having 1 to 5 carbon atoms; where R2 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, and * represents a bonding site.

公开(公告)号：US20240301553A1

公开(公告)日：2024-09-12

申请号：US18571903

申请日：2022-06-17

Applicant: ADEKA CORPORATION

Inventor： Masako HATASE ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C23C16/455 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1):




where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and “n” represents a valence of the rare earth metal atom.

公开(公告)号：US20230349039A1

公开(公告)日：2023-11-02

申请号：US18026488

申请日：2021-09-08

Applicant: ADEKA CORPORATION

Inventor： Masako HATASE ,  Chiaki MITSUI

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/52

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):





where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms.