公开(公告)号：US20250019820A1

公开(公告)日：2025-01-16

申请号：US18708639

申请日：2022-11-07

Applicant: ADEKA CORPORATION

Inventor： Ryota FUKUSHIMA ,  Masaki ENZU ,  Chiaki MITSUI ,  Nana OKADA ,  Masako HATASE

IPC: C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a ruthenium compound represented by the following general formula (1): wherein R1 represents a hydrogen atom or a methyl group, and R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US20200148706A1

公开(公告)日：2020-05-14

申请号：US16609622

申请日：2018-05-28

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Nana OKADA ,  Akihiro NISHIDA

IPC: C07F5/00 ,  C23C16/40 ,  C23C16/455

Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1): (in the formula, R1 and R2 each independently represent an alkyl group having 1 to 4 carbon atoms, R3 represents an alkyl group having 2 or 3 carbon atoms, M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, a europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom, or a lutetium atom, and n represents the valence represented by M.)

公开(公告)号：US20240352044A1

公开(公告)日：2024-10-24

申请号：US18757905

申请日：2024-06-28

Applicant: ADEKA Corporation

Inventor： Nana OKADA ,  Masako HATASE ,  Akihiro NISHIDA ,  Atsushi SAKURAI

IPC: C07F5/00 ,  C23C16/40 ,  C23C16/455

CPC classification number: C07F5/003 ,  C23C16/405 ,  C23C16/45525

Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

公开(公告)号：US20220017554A1

公开(公告)日：2022-01-20

申请号：US17490227

申请日：2021-09-30

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Nana OKADA ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

公开(公告)号：US20200262854A1

公开(公告)日：2020-08-20

申请号：US16760171

申请日：2018-07-27

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Nana OKADA ,  Masako HATASE

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

公开(公告)号：US20200055887A1

公开(公告)日：2020-02-20

申请号：US16346724

申请日：2017-10-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Nana OKADA ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

公开(公告)号：US20230304154A1

公开(公告)日：2023-09-28

申请号：US18014371

申请日：2021-06-25

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Nana OKADA ,  Ryota FUKUSHIMA

IPC: C23C16/455 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: The present invention provides an alkoxide compound represented by the following general formula (1), a thin-film forming raw material containing the compound, and a method of producing a thin-film:





where R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and “n” represents the valence of the atom represented by M, provided that when M represents a copper atom, R3 and R4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R5 represents a hydrogen atom.

公开(公告)号：US20210340162A1

公开(公告)日：2021-11-04

申请号：US17281105

申请日：2019-09-24

Applicant: ADEKA CORPORATION

Inventor： Nana OKADA ,  Tomoharu YOSHINO ,  Atsushi YAMASHITA

IPC: C07F5/00 ,  C23C16/18 ,  C23C16/455

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.