公开(公告)号：US20220213592A1

公开(公告)日：2022-07-07

申请号：US17600886

申请日：2020-03-27

Applicant: ADEKA CORPORATION

Inventor： Naoki YAMADA ,  Haruyoshi SATO ,  Kazuki HARANO

IPC: C23C16/18 ,  C07F5/00

Abstract: The present invention provides a thin-film forming raw material including a scandium compound represented by the following general formula (1), a method of producing a thin-film including using the thin-film forming raw material, and a novel scandium compound: where R1 represents an alkyl group having 1 to 4 carbon atoms, R2 represents an alkyl group having 2 or 3 carbon atoms, and R3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.

公开(公告)号：US20190292663A1

公开(公告)日：2019-09-26

申请号：US16302895

申请日：2017-02-27

Applicant: ADEKA CORPORATION

Inventor： Hiroki SATO ,  Naoki YAMADA ,  Tsubasa SHIRATORI ,  Haruyoshi SATO

IPC: C23C16/455 ,  C23C16/40

Abstract: A raw material for forming a thin film that includes a compound represented by General Formula (1) below. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms; R2 to R5 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.

公开(公告)号：US20180134739A1

公开(公告)日：2018-05-17

申请号：US15861719

申请日：2018-01-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Naoki YAMADA ,  Tsubasa SHIRATORI ,  Akio SAITO ,  Tomoharu YOSHINO

IPC: C07F15/06 ,  C23C16/40 ,  C23C16/18 ,  C07C251/04 ,  C07F15/04 ,  C07F1/08 ,  C07C251/08 ,  C07F7/28

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.