CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    3.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统的清洁

    公开(公告)号:WO2007127865A3

    公开(公告)日:2008-12-11

    申请号:PCT/US2007067542

    申请日:2007-04-26

    CPC classification number: C23C14/564 C23C16/4405 H01J37/32412 H01J37/32862

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    Abstract translation: 一种清洁残留物的方法和装置,用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物,将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时,气相反应性材料与残余物选择性反应,并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时,气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2,XeF 4,XeF 6,NF 3,IF 5,IF 7,SF 6,C 2 F 6,F 2,CF 4,KrF 2,Cl 2,HCl,ClF 3,ClO 2,N 2 F 4,N 2 F 2,N 3 F, ,NH2F,HOBr,Br2,C3F8,C4F8,C5F8,CHF3,CH2F2,CH3F,COF2,HF,C2HF5,C2H2F4,C2H3F3,C2H4F2,C2H5F,C3F6和有机氯化物,如COCl2,CCl4,CHCl3,CH2Cl2和CH3Cl。

    APPARATUS AND METHOD FOR INHIBITING DECOMPOSITION OF GERMANE

    公开(公告)号:AU2003286671A1

    公开(公告)日:2004-05-25

    申请号:AU2003286671

    申请日:2003-10-27

    Abstract: A germane storage and dispensing system, in which germane gas is sorptively retained on an activated carbon sorbent medium in a vessel containing adsorbed and free germane gas. The activated carbon sorbent medium is deflagration-resistant in relation to the germane gas adsorbed thereon, i.e., under deflagration conditions of 65° C. and 650 torr, under which free germane gas undergoes deflagration, the activated carbon sorbent medium does not sustain deflagration of the adsorbed germane gas or thermally desorb the germane gas so that it undergoes subsequent deflagration. The deflagration-resistance of the activated carbon sorbent medium is promoted by pre-treatment of the sorbent material to remove extraneous sorbables therefrom and by maintaining the fill level of the sorbent medium in the gas storage and dispensing vessel at a substantial value, e.g., of at least 30%.

    Throughflow gas storage and dispensing system

    公开(公告)号:AU2214599A

    公开(公告)日:1999-07-26

    申请号:AU2214599

    申请日:1999-01-07

    Abstract: An apparatus for storage and dispensing of a gas, comprising a gas storage and dispensing vessel holding a physical sorbent medium and gas adsorbed on the physical sorbent medium, wherein a carrier gas, e.g., helium, hydrogen, argon, etc., is flowed through the vessel to effect desorption of the sorbate gas and entrainment of the desorbed gas in the carrier gas stream. The storage and dispensing system of the invention may be employed to provide the dispensed sorbate gas to a downstream locus of use in applications such as epitaxial film formation and ion implantation, in the manufacture of semiconductor devices.

    APPARATUS AND METHOD FOR INHIBITING DECOMPOSITION OF GERMANE

    公开(公告)号:MY131132A

    公开(公告)日:2007-07-31

    申请号:MYPI20034080

    申请日:2003-10-27

    Abstract: A GERMANE STORAGE AND DISPENSING SYSTEM (110), IN WHICH GERMANE GAS IS SORPTIVELY RETAINED ON AN ACTIVATED CARBON SORBENT MEDIUM (116) IN A VESSEL (112) CONTAINING ADSORBED AND FREE GERMANE GAS. THE ACTIVATED CARBON SORBENT MEDIUM IS DEFLAGRATION-RESISTANT IN RELATION TO THE GERMANE GAS ADSORBED THEREON, I.E., UNDER DEFLAGRATION CONDITIONS OF 65° C. AND 650 TORR, UNDER WHICH FREE GERMANE GAS UNDERGOES DEFLAGRATION, THE ACTIVATED CARBON SORBENT MEDIUM DOES NOT SUSTAIN DEFLAGRATION OF THE ADSORBED GERMANE GAS OR THERMALLY DESORB THE GERMANE GAS SO THAT IT UNDERGOES SUBSEQUENT DEFLAGRATION. THE DEFLAGRATION-RESISTANCE OF THE ACTIVATED CARBON SORBENT MEDIUM IS PROMOTED BY PRE-TREATMENT OF THE SORBENT MATERIAL TO REMOVE EXTRANEOUS SORBABLES THEREFROM AND BY MAINTAINING THE FILL LEVEL OF THE SORBENT MEDIUM IN THE GAS STORAGE AND DISPENSING VESSEL AT A SUBSTANTIAL VALUE, E.G., OF AT LEAST 30%.(FIG 5)

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