公开(公告)号：GB2286914A

公开(公告)日：1995-08-30

申请号：GB9508878

申请日：1995-01-31

Applicant: ALTERA CORP

Inventor： PATEL RAKESH H ,  WONG MYRON W

IPC: G06F11/20 ,  H03K19/177

Abstract: When a portion of a programmable logic device is found to be defective, redundant circuitry is switched into use in place of the defective circuitry. The programmable logic device is arranged in rows and columns of programmable logic containing logic array blocks 12, which a user selectively configures by loading programming data into vertical and horizontal programming blocks. When the redundant circuitry is switched into place, the programming data is redirected to the appropriate programing blocks. The outputs of each block 12 go to demultiplexers 24, multiplexers 28 and tristate drivers 26 connected to row and column conductors. When a defective row of blocks 12 is switched out of use, a spare row being switched in, input/output pins 18 for the row conductors are reconnected to respective adjacent rows instead, as necessary (by circuitry not shown in Fig. 2).

公开(公告)号：GB2286914B

公开(公告)日：1997-11-26

申请号：GB9508878

申请日：1995-01-31

Applicant: ALTERA CORP

Inventor： PATEL RAKESH H ,  WONG MYRON W

IPC: G06F11/20 ,  H03K19/177

公开(公告)号：GB2286703A

公开(公告)日：1995-08-23

申请号：GB9501878

申请日：1995-01-31

Applicant: ALTERA CORP

Inventor： PATEL RAKESH H ,  WONG MYRON W

IPC: G06F11/20 ,  H03K19/003 ,  H03K19/173 ,  H03K19/177

Abstract: A programmable logic device is provided that has redundant circuitry. When a portion of the programmable logic device circuitry is found to be defective, the redundant circuitry is switched into use in place of the defective circuitry by programming appropriate portions of the circuitry of the programmable logic device. The programmable logic device is arranged in rows and columns of programmable logic containing logic array blocks, which a user selectively configures by loading programming data into vertical and horizontal programming blocks. Programming blocks are used to program the logic array blocks and various associated logic circuitry. When the redundant circuitry is switched into place, the programming data is redirected to the appropriate programming blocks, so that the device functions identically, regardless of whether or not the redundant circuitry is used.

公开(公告)号：GB2286703B

公开(公告)日：1997-11-19

申请号：GB9501878

申请日：1995-01-31

Applicant: ALTERA CORP

Inventor： PATEL RAKESH H ,  WONG MYRON W

IPC: G06F11/20 ,  H03K19/003 ,  H03K19/173 ,  H03K19/177

Abstract: A programmable logic device is provided that has redundant circuitry. When a portion of the programmable logic device circuitry is found to be defective, the redundant circuitry is switched into use in place of the defective circuitry by programming appropriate portions of the circuitry of the programmable logic device. The programmable logic device is arranged in rows and columns of programmable logic containing logic array blocks, which a user selectively configures by loading programming data into vertical and horizontal programming blocks. Programming blocks are used to program the logic array blocks and various associated logic circuitry. When the redundant circuitry is switched into place, the programming data is redirected to the appropriate programming blocks, so that the device functions identically, regardless of whether or not the redundant circuitry is used.

公开(公告)号：JPH10334678A

公开(公告)日：1998-12-18

申请号：JP6997098

申请日：1998-03-19

Applicant: ALTERA CORP

Inventor： MADURAWE RAMINDA U ,  SMOLEN RICHARD G ,  LIANG MINCHANG ,  SANSBURY JAMES D ,  TURNER JOHN E ,  COSTELLO JOHN C ,  WONG MYRON W

IPC: G11C16/04 ,  G11C16/26 ,  G11C29/50 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a biasing method of a dual low line EEPROM to reduce stress on the dielectric material window of cell. SOLUTION: A bias voltage is applied to the control gate 40 and floating gate 32 of the EEPROM cell 200 to result in a potential difference between the control gate voltage and floating gate voltage of about 0.5 V or less. A tunnel oxidization film area is remarkably reduced by biasing the control voltage and floating gate voltage of cell 200. Moreover, a write column voltage is selected on the basis of the control gate voltage to substantially keep the balance of the tunnel oxidization film area in all operation modes.