Abstract:
In a programmable logic device, some or all of the parallel interconnect resources (24) are replaced by serial interconnect resources (25) within the device. Some or all of the functional blocks (21, 22, 23) on the device are supplemented with serial interfaces (30) . Although this makes the functional blocks more complex, it allows a significant reduction in the area consumed by interconnect resources. This translates into a significant reduction in device power consumption. The serial interfaces (30) may operate synchronously from a global device clock (such as a PLL) . In some cases, serial interfaces (30) that are provided in the input/output blocks (23) for external signalling can be omitted because the serial interfaces in the functional blocks can take over the external serial interface function as well, although in those cases the serial interfaces in the functional blocks (23) would have to be more complex because they would have to be able to operate asynchronously with external devices .
Abstract:
Incoming data at a high-speed serial receiver is digitized and then digital signal processing (DSP) techniques may be used to perform digital equalization. Such digital techniques may be used to correct various data anomalies. In particular, in a multi-channel system, where crosstalk may be of concern, knowledge of the characteristics of the other channels, or even the data on those channels, may allow crosstalk to be subtracted out. Knowledge of data channel geometries, particularly in the context of backplane transmissions, may allow echoes and reflections caused by connectors to be subtracted out. As data rates increase, fractional rate processing can be employed. For example, the analog-to-digital conversion can be performed at half-rate and then two DSPs can be used in parallel to maintain throughput at the higher initial clock rate. At even higher rates, quadrature techniques can allow analog-to-digital conversion at quarter-rate, with four DSPs used in parallel.
Abstract:
PROBLEM TO BE SOLVED: To provide a serial interface capable of responding suitably to a wide range data rate. SOLUTION: A serial interface for a PLD (20) supports a wide range of the data rate by providing the first number of channels (21-24) for supporting the data rate of the first range and the second number of channels (200) for supporting the second range of the data rate. The data rate for the first range is lower than the data rate for the second range. The first number of the channels is larger than the number of the second channels which is preferably one. The number of the first channels in each of the interfaces is suitably four. Each of the channels includes a physical medium connection module (26) and a physically coded sublayer module (25). Each of the high-speed channels for the channels of the second number includes a clock management unit. The low-speed channel of the channel of the first number shares one or more clock management units. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
A high-performance programmable logic architecture has embedded memory arranged at peripheries or edges of the integrated circuit. This enhances the performance of the programmable logic integrated circuit by shortening the lengths of the programmable interconnect (748). In a specific embodiment, the memory blocks (703,706) are organized in rows along the top and bottom edges of the integrated circuit. The logic elements can be directly programmable routed and connected to driver blocks of the logic blocks in adjacent rows and columns. This permits fast interconnection of signals without using the global programmable interconnect resources. Using similar direct programmable interconnections the logic blocks can directly programmable connect to the memory blocks without using the global programmable interconnect resources. The present invention also provides technique of flexibly combining or stitching multiple memories together to form memories of a desired size
Abstract:
An output circuit for a programmable circuit with a low voltage core 1310 comprises a level converter 1317 powered from a quiet supply 1335 and feeding an output driver 1323 which is supplied by a noisy supply 1338. The core 1310 is supplied from the quiet supply via a voltage supply down converter 1330 comprising an NMOS transistor 1335 and a CMOS inverting feedback amplifier 1360.
Abstract:
A static, nonvolatile, and reprogrammable programmable interconnect junction cell for implementing programmable interconnect in an integrated circuit. The programmable interconnect junction (600) is programmably configured to couple or decouple a first interconnect line (210) and a second interconnect line (220). The configured state of the programmable interconnect junction is detected directly, and memory cell detection circuitry such as sense amplifiers are not needed during normal operation. Full-rail voltages may be passed from the first interconnect line and the second interconnect line. An interconnect transistor 610 and a memory transistor 635 share a floating gate 620 which is charged via a write transistor 650 and tunnel diode 660 and controlled from a line 670 via a capacitor 680. A read transistor 630 can be used for margin testing.
Abstract:
When a portion of a programmable logic device is found to be defective, redundant circuitry is switched into use in place of the defective circuitry. The programmable logic device is arranged in rows and columns of programmable logic containing logic array blocks 12, which a user selectively configures by loading programming data into vertical and horizontal programming blocks. When the redundant circuitry is switched into place, the programming data is redirected to the appropriate programing blocks. The outputs of each block 12 go to demultiplexers 24, multiplexers 28 and tristate drivers 26 connected to row and column conductors. When a defective row of blocks 12 is switched out of use, a spare row being switched in, input/output pins 18 for the row conductors are reconnected to respective adjacent rows instead, as necessary (by circuitry not shown in Fig. 2).
Abstract:
PROBLEM TO BE SOLVED: To provide a delay cell for a voltage-controlled oscillator (VCO), which is capable of realizing a wide operational band width, without being restricted by the power supply. SOLUTION: The delay cell has a selectable number of parallel connection load resistance transistors which can operate in parallel and the selectable number of bias current transistors which can operate in parallel. The VCO contains a plurality of delay cells of this type in a series closed loop. A phase- locked loop (PLL) circuit includes the VCO of this type, controlled by a phase/ frequency detecting circuit. By the capability of controlling the number of these transistors which are activated or non-activated in each of the delay cells, the PLL can have a very wide operational frequency range. Activation or non- activation can be controlled by a program or by another method. COPYRIGHT: (C)2003,JPO
Abstract:
A high-performance programmable logic architecture has embedded memory arranged at the peripheries or edges of the integrated circuit. This enhances the performance of the programmable logic integrated circuit by shortening the lengths of the programmable interconnect (748). In a specific embodiment, the memory blocks (703,706) are organized in rows along the top and bottom edges of the integrated circuit. The logic elements can be directly programmable routed and connected to driver blocks of the logic block in adjacent rows and columns. This permits fast interconnection of signals without using the global programmable interconnect resources. Using similar direct programmable interconnections the logic blocks can directly programmable connect to the memory blocks without using the global programmable interconnect resources.
Abstract:
A technique of fabricating a nonvolatile device includes forming a low doping region to aid in the reduction of substrate hot electrons. The nonvolatile device may be a floating gate device, such as a Flash, EEPROM, or EPROM memory cell. The low doping region has a lower doping concentration than that of the substrate. By reducing substrate hot electrons, this improves the reliability and longevity of the nonvolatile device.