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公开(公告)号：WO2022233546A1
公开(公告)日：2022-11-10
申请号：PCT/EP2022/059781
申请日：2022-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： BATISTAKIS, Chrysostomos , PISARENCO, Maxim , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria , RUTIGLIANI, Vito, Daniele , MIDDLEBROOKS, Scott, Anderson , VERSCHUREN, Coen, Adrianus , GEYPEN, Niels
Abstract: A method of determining a stochastic metric, the method comprising: obtaining a trained model having been trained to correlate training optical metrology data to training stochastic metric data, wherein the training optical metrology data comprises a plurality of measurement signals relating to distributions of an intensity related parameter across a zero or higher order of diffraction of radiation scattered from a plurality of training structures, and the training stochastic metric data comprises stochastic metric values relating to said plurality of training structures, wherein the plurality of training structures have been formed with a variation in one or more dimensions on which said stochastic metric is dependent; obtaining optical metrology data comprising a distribution of the intensity related parameter across a zero or higher order of diffraction of radiation scattered from a structure; and using the trained model to infer a value of the stochastic metric from the optical metrology data.
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2.发明申请
公开(公告)号：WO2019052741A1
公开(公告)日：2019-03-21
申请号：PCT/EP2018/071128
申请日：2018-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor： GEYPEN, Niels
IPC: G03F7/20
Abstract: Disclosed is a method of aligning a pair of complementary diffraction patterns comprising a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns being obtained from performance of a metrology process on a structure formed by a lithographic process. The method comprises performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage comprises: interpolating measured values of the first complementary diffraction pattern over at least a portion of the detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern. Also disclosed is a method of measuring a parameter of interest of a structure using the aligning method, and an associated metrology apparatus.
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3.发明申请METROLOGY METHOD AND APPARATUS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 审中-公开计量方法和装置，光刻系统和装置制造方法
公开(公告)号：WO2015018625A1
公开(公告)日：2015-02-12
申请号：PCT/EP2014/065461
申请日：2014-07-18
Applicant: ASML NETHERLANDS B.V.
Inventor： MIDDLEBROOKS, Scott, Anderson , GEYPEN, Niels , SMILDE, Hendrik, Jan, Hidde , STRAAIJER, Alexander , VAN DER SCHAAR, Maurits , VAN KRAAIJ, Markus, Gerardus, Martinus, Maria
IPC: G03F7/20
CPC classification number: G03F7/70633
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
Abstract translation: 公开了一种测量光刻工艺参数的方法和相关检验装置。 该方法包括使用多个不同的照明条件在衬底上测量至少两个目标结构，所述目标结构具有故意的覆盖偏移; 为每个目标结构获得表示总体不对称性的不对称测量，其包括由于（i）故意覆盖偏移引起的贡献，（ii）在形成目标结构期间的覆盖误差和（iii）任何特征不对称性。 对不对称测量数据进行回归分析，通过将线性回归模型拟合到针对另一目标结构的不对称测量的一个目标结构的不对称测量的平面表示，线性回归模型不一定通过平面表示的原点拟合 。 然后可以从线性回归模型描述的梯度确定覆盖误差。
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4.发明申请
公开(公告)号：WO2021121906A1
公开(公告)日：2021-06-24
申请号：PCT/EP2020/083682
申请日：2020-11-27
Applicant: ASML NETHERLANDS B.V.
Inventor： NIENHUYS, Han-Kwang , COENEN, Teis, Johan , ROOBOL, Sander, Bas , COTTAAR, Jeroen , MOSSAVAT, Seyed Iman , GEYPEN, Niels , SCHOLZ, Sandy, Claudia , PORTER, Christina, Lynn
IPC: G03F7/20 , G01N21/95 , G06N20/00 , G01N2021/95676 , G01N21/95623 , G03F7/70558 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G06N3/08
Abstract: Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.
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Patent Agency Ranking5.发明申请
公开(公告)号：WO2019129465A1
公开(公告)日：2019-07-04
申请号：PCT/EP2018/083507
申请日：2018-12-04
Applicant: ASML NETHERLANDS B.V.
Inventor： BRUSSAARD, Gerrit, Jacobus, Hendrik , SMORENBURG, Petrus, Wilhelmus , COENEN, Teis, Johan , GEYPEN, Niels , VAN VOORST, Peter, Danny , ROOBOL, Sander, Bas
Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.
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6.发明申请
公开(公告)号：WO2017186491A1
公开(公告)日：2017-11-02
申请号：PCT/EP2017/058771
申请日：2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： LIN, Nan , DEN BOEF, Arie, Jeffrey , ROOBOL, Sander, Bas , MATHIJSSEN, Simon, Gijsbert, Josephus , GEYPEN, Niels
CPC classification number: G03F7/70616 , G01B11/24 , G01N21/9501 , G01N21/956 , G01N2021/8845 , G02F1/3551 , G02F1/37 , G03F7/70625 , G03F7/70633 , H01S3/0092 , H01S3/1305 , H01S3/1625 , H01S3/1636
Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.
Abstract translation: 公开了一种在检查装置中执行测量的方法，以及相关联的检查装置和HHG源。 该方法包括配置高次谐波生成辐射源的至少一个驱动激光脉冲的一个或多个可控特性以控制由高次谐波生成辐射源提供的照射辐射的输出发射光谱; 并用所述照射辐射照射目标结构。 该方法可以包括配置驱动激光脉冲，使得输出发射频谱包括多个离散的谐波峰值。 可选地，该方法可以包括使用不同波长的多个驱动激光脉冲，使得输出发射光谱基本上是单色的。
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公开(公告)号：EP4336262A1
公开(公告)日：2024-03-13
申请号：EP22194304.6
申请日：2022-09-07
Applicant: ASML Netherlands B.V.
Inventor： El GAWHARY, Omar , HELFENSTEIN, Patrick, Philipp , VAN RIJSWIJK, Loes, Frederique , GEYPEN, Niels
IPC: G03F7/20
Abstract: Disclosed is a method of determining at least one parameter of interest relating to a structure formed in at least one respective layer on a substrate, the method comprising: obtaining measured metrology data relating to a measurement of said structure; obtaining a model of said structure, said model describing said structure in terms of a plurality of model parameters; performing one or more first optimization steps to determine one or more vertical positional parameters of said model parameters, said one or more vertical positional parameters relating to a direction perpendicular to a substrate plane defined by a surface or interface of said substrate; and performing one or more second optimization steps subsequently to performance of said one or more first optimization steps, to determine one or more other model parameters of said plurality of model parameters.
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8.发明公开
公开(公告)号：EP3457211A1
公开(公告)日：2019-03-20
申请号：EP17190810.6
申请日：2017-09-13
Applicant: ASML Netherlands B.V.
Inventor： GEYPEN, Niels
IPC: G03F7/20
Abstract: Disclosed is a method of aligning a pair of complementary diffraction patterns comprising a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns being obtained from performance of a metrology process on a structure formed by a lithographic process. The method comprises performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage comprises: interpolating measured values of the first complementary diffraction pattern over at least a portion of the detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern. Also disclosed is a method of measuring a parameter of interest of a structure using the aligning method, and an associated metrology apparatus.
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9.发明公开
公开(公告)号：EP3528048A1
公开(公告)日：2019-08-21
申请号：EP18156870.0
申请日：2018-02-15
Applicant: ASML Netherlands B.V.
Inventor： BRUSSAARD, Gerrit Jacobus Hendrik , SMORENBURG, Petrus Wilhelmus , COENEN, Teis, Johan , GEYPEN, Niels , VAN VOORST, Peter Danny , ROOBOL, Sander Bas
Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.
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