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    METHOD OF CALCULATING CORRECTIONS FOR CONTROLLING A MANUFACTURING PROCESS, METROLOGY APPARATUS, DEVICE MANUFACTURING METHOD AND MODELING METHOD
    2.
    发明申请
    METHOD OF CALCULATING CORRECTIONS FOR CONTROLLING A MANUFACTURING PROCESS, METROLOGY APPARATUS, DEVICE MANUFACTURING METHOD AND MODELING METHOD 审中-公开
    计算用于控制制造过程的校正的方法，计量装置，装置制造方法和建模方法

    公开(公告)号：WO2017153171A1

    公开(公告)日：2017-09-14

    申请号：PCT/EP2017/054053

    申请日：2017-02-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SCHMITT-WEAVER, Emil, Peter ,  ISMAIL, Amir, Bin ,  BHATTACHARYYA, Kaustuve ,  DERWIN, Paul

    IPC: G03F7/20

    CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625 ,  G03F9/7088 ,  G03F9/7092

    Abstract: Corrections (CPE) are calculated for use in controlling a lithographic apparatus (100). Using a metrology apparatus (140) a performance parameter is measured (200) at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted (210) to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated (230) for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data (312) is available, this is added (240) to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate (316) which is a combination of values (318) estimated by the process model and partly on real measurement data (312).

    Abstract translation: 校正（CPE）被计算用于控制光刻设备（100）。 使用度量衡装置（140），在先前已应用光刻过程的一个或多个衬底上的采样位置处测量（200）性能参数。 将过程模型拟合（210）到所测量的性能参数，并且为整个衬底上的过程引起的效应提供上采样估计。 计算（230）用于控制光刻设备的校正，使用致动模型并且至少部分地基于拟合过程模型。 对于测量数据（312）可用的位置，将其添加（240）到估计以替换过程模型值。 因此，致动修正的计算基于修正的估计（316），该修正的估计（316）是由过程模型估计的值（318）和部分基于实际测量数据（312）的值的组合（318）。

    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS
    3.
    发明申请
    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS 审中-公开

    公开(公告)号：WO2021001129A1

    公开(公告)日：2021-01-07

    申请号：PCT/EP2020/066108

    申请日：2020-06-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  DERWIN, Paul ,  ELBATTAY, Khalid

    IPC: G03F7/20

    Abstract: Disclosed is a method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method comprising: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining said intra-field correction based at least partially on said accuracy metric.

    METHOD FOR DETERMINING A SAMPLING SCHEME, A SEMICONDUCTOR SUBSTRATE MEASUREMENT APPARATUS, A LITHOGRAPHIC APPARATUS
    4.
    发明公开
    METHOD FOR DETERMINING A SAMPLING SCHEME, A SEMICONDUCTOR SUBSTRATE MEASUREMENT APPARATUS, A LITHOGRAPHIC APPARATUS 审中-公开

    公开(公告)号：EP4235306A2

    公开(公告)日：2023-08-30

    申请号：EP23173939.2

    申请日：2020-05-11

    Applicant: ASML Netherlands B.V.

    Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  ELBATTAY, Khalid ,  DERWIN, Paul ,  WERKMAN, Roy ,  JENSEN, Erik ,  YU, Hyun-Woo ,  SARMA, Gautam

    IPC: G03F7/20

    Abstract: The invention provides a method of obtaining a fingerprint model for modelling a spatial distribution of a performance parameter over a portion of a substrate, the method comprising: defining an initial fingerprint model related to the spatial distribution of the performance parameter over the portion as a parameterized combination of basis functions; determining parameter values for the parameterized combination of basis functions based on pre-knowledge, and determining the fingerprint model for modelling the spatial distribution of the performance parameter over the portion of the substrate, based on a measurement set representing the performance parameter over the portion of a set of one or more semiconductor substrates and the initial fingerprint model, whereby a ratio of at least two parameter values of the basis functions as determined in the initial fingerprint model is kept constant or at least part of the shape of the initial fingerprint model is maintained in the fingerprint model.

    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS
    6.
    发明公开
    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS 审中-公开

    公开(公告)号：EP3767391A1

    公开(公告)日：2021-01-20

    申请号：EP19186820.7

    申请日：2019-07-17

    Applicant: ASML Netherlands B.V.

    Inventor： SMORENBERG, Pieter Gerardus Jacobus ,  SAPUTRA, Putra ,  DERWIN, Paul ,  ELBATTAY, Khalid

    IPC: G03F7/20

    Abstract: Disclosed is a method for determining an intra-field correction for sub-field control of a lithographic process for exposing a pattern on an exposure field of a substrate, the exposure field comprising a plurality of sub-fields. The method comprises obtaining a database comprising intra-field fingerprint data linked with historic lithographic apparatus metrology data, determining an estimate for an intra-field fingerprint from lithographic apparatus metrology data and said database; and determining the intra-field correction for the lithographic process based on the estimated intra-field fingerprint.

    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS
    8.
    发明公开
    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS 审中-公开

    公开(公告)号：EP3734366A1

    公开(公告)日：2020-11-04

    申请号：EP19172479.8

    申请日：2019-05-03

    Applicant: ASML Netherlands B.V.

    Inventor： SAPUTRA, Putra ,  SMORENBERG, Pieter Gerardus Jacobus ,  ELBATTAY, Khalid ,  DERWIN, Paul ,  ZHONG, Bo ,  KOMATSU, Masaya

    IPC: G03F7/20 ,  G03F1/70

    Abstract: Disclosed is a method for controlling a lithographic process for exposing a pattern on an exposure field, the method comprising: obtaining an initial spatial profile associated with a spatial variation of a performance parameter for a first layer across a sub-field of the exposure field; decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus to correct the spatial variation of the performance parameter and a second component spatial profile for controlling another apparatus or another layer to correct the spatial variation of the performance parameter; and co-optimizing the first and second component spatial profiles to achieve a better correction of the spatial variation of the performance parameter in comparison to correction of the spatial variation of the performance parameter based on using the initial spatial profile for controlling the lithographic apparatus.

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