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公开(公告)号:WO2021001129A1
公开(公告)日:2021-01-07
申请号:PCT/EP2020/066108
申请日:2020-06-10
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
Abstract: Disclosed is a method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method comprising: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining said intra-field correction based at least partially on said accuracy metric.
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公开(公告)号:WO2022179773A1
公开(公告)日:2022-09-01
申请号:PCT/EP2022/051299
申请日:2022-01-21
Applicant: ASML NETHERLANDS B.V.
Inventor: DOS SANTOS GUZELLA, Thiago , ISHIBASHI, Masashi , SANNO, Noriaki , BASTANI, Vahid , SAHRAEIAN, Reza , SAPUTRA, Putra
IPC: G01N21/956 , G03F7/20 , G05B19/418 , G06N20/00 , H01L21/66
Abstract: Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model (MOD), having been trained to predict first metrology data based on second metrology data, wherein the first metrology data (OV) is spatially varying metrology data which relates to a first type of measurement of said structures being a measure of yield and said second metrology data (PB) is spatially varying metrology data which relates to a second type of measurement of said structures and correlates with said first metrology data; and using said model to obtain said spatially varying process offset (MTD).
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3.
公开(公告)号:WO2020234028A1
公开(公告)日:2020-11-26
申请号:PCT/EP2020/063077
申请日:2020-05-11
Applicant: ASML NETHERLANDS B.V.
Inventor: SMORENBERG, Pieter, Gerardus, Jacobus , SAPUTRA, Putra , ELBATTAY, Khalid , DERWIN, Paul , WERKMAN, Roy , JENSEN, Erik , YU, Hyun-Woo , SARMA, Gautam
IPC: G03F7/20
Abstract: The invention provides a method for determining a sampling scheme, which method comprises: - obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of said performance parameter over a second portion of the semiconductor substrate; and - determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.
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4.
公开(公告)号:WO2016020170A1
公开(公告)日:2016-02-11
申请号:PCT/EP2015/066314
申请日:2015-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor: KOEVOETS, Adrianus, Hendrik , BERENDSEN, Christianus, Wilhelmus, Johannes , CORTIE, Rogier, Hendrikus, Magdalena , OVERKAMP, Jim, Vincent , NEEFS, Patricius, Jacobus , SAPUTRA, Putra , BLOKS, Ruud, Hendricus, Martinus, Johannes , RENDERS, Michael, Johannes, Hendrika, Wilhelmina , KUNNEN, Johan, Gertrudis, Cornelis , LAURENT, Thibault, Simon, Mathieu
IPC: G03F7/20
CPC classification number: G03F7/70725 , G03F7/70341 , G03F7/70783 , G03F7/70875
Abstract: A lithographic apparatus comprising an object table which carries an object. The lithographic apparatus may further comprise at least one sensor as part of a measurement system to measure a characteristic of the object table, the environment surrounding the lithographic apparatus or another component of the lithographic apparatus. The measured characteristic may be used to estimate the deformation of the object due to varying loads during operation of the lithographic apparatus, for example varying loads induced by a two- phase flow in a channel formed within the object table. Additionally, or alternatively, the lithographic apparatus comprises a predictor to estimate the deformation of the object based on a model. The positioning of the object table carrying the object can be controlled based on the estimated deformation. The positioning of a projection beam, used to pattern a substrate, can be controlled relative to the object, to alter the position of the pattern and/or the projection beam on the substrate, based on the estimated deformation.
Abstract translation: 一种光刻设备,包括承载物体的物体台。 光刻设备还可以包括至少一个传感器作为测量系统的一部分,以测量物体表的特征,光刻设备周围的环境或光刻设备的另一部件。 测量的特性可以用于估计由于在光刻设备的操作期间变化的负载的物体的变形,例如由形成在物体表内的通道中的两相流引起的变化的负载。 另外或替代地,光刻设备包括基于模型来估计物体的变形的预测器。 可以基于估计的变形来控制携带物体的物体台的定位。 基于估计的变形,可以相对于物体来控制用于图案化基板的投影光束的定位,以改变图案和/或投影光束在基板上的位置。
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5.
公开(公告)号:EP4235306A2
公开(公告)日:2023-08-30
申请号:EP23173939.2
申请日:2020-05-11
Applicant: ASML Netherlands B.V.
Inventor: SMORENBERG, Pieter, Gerardus, Jacobus , SAPUTRA, Putra , ELBATTAY, Khalid , DERWIN, Paul , WERKMAN, Roy , JENSEN, Erik , YU, Hyun-Woo , SARMA, Gautam
IPC: G03F7/20
Abstract: The invention provides a method of obtaining a fingerprint model for modelling a spatial distribution of a performance parameter over a portion of a substrate, the method comprising: defining an initial fingerprint model related to the spatial distribution of the performance parameter over the portion as a parameterized combination of basis functions; determining parameter values for the parameterized combination of basis functions based on pre-knowledge, and determining the fingerprint model for modelling the spatial distribution of the performance parameter over the portion of the substrate, based on a measurement set representing the performance parameter over the portion of a set of one or more semiconductor substrates and the initial fingerprint model, whereby a ratio of at least two parameter values of the basis functions as determined in the initial fingerprint model is kept constant or at least part of the shape of the initial fingerprint model is maintained in the fingerprint model.
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公开(公告)号:EP3767391A1
公开(公告)日:2021-01-20
申请号:EP19186820.7
申请日:2019-07-17
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
Abstract: Disclosed is a method for determining an intra-field correction for sub-field control of a lithographic process for exposing a pattern on an exposure field of a substrate, the exposure field comprising a plurality of sub-fields. The method comprises obtaining a database comprising intra-field fingerprint data linked with historic lithographic apparatus metrology data, determining an estimate for an intra-field fingerprint from lithographic apparatus metrology data and said database; and determining the intra-field correction for the lithographic process based on the estimated intra-field fingerprint.
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7.
公开(公告)号:EP4235306A3
公开(公告)日:2023-09-20
申请号:EP23173939.2
申请日:2020-05-11
Applicant: ASML Netherlands B.V.
Inventor: SMORENBERG, Pieter, Gerardus, Jacobus , SAPUTRA, Putra , ELBATTAY, Khalid , DERWIN, Paul , WERKMAN, Roy , JENSEN, Erik , YU, Hyun-Woo , SARMA, Gautam
Abstract: The invention provides a method of obtaining a fingerprint model for modelling a spatial distribution of a performance parameter over a portion of a substrate, the method comprising: defining an initial fingerprint model related to the spatial distribution of the performance parameter over the portion as a parameterized combination of basis functions; determining parameter values for the parameterized combination of basis functions based on pre-knowledge, and determining the fingerprint model for modelling the spatial distribution of the performance parameter over the portion of the substrate, based on a measurement set representing the performance parameter over the portion of a set of one or more semiconductor substrates and the initial fingerprint model, whereby a ratio of at least two parameter values of the basis functions as determined in the initial fingerprint model is kept constant or at least part of the shape of the initial fingerprint model is maintained in the fingerprint model.
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公开(公告)号:EP3734366A1
公开(公告)日:2020-11-04
申请号:EP19172479.8
申请日:2019-05-03
Applicant: ASML Netherlands B.V.
Inventor: SAPUTRA, Putra , SMORENBERG, Pieter Gerardus Jacobus , ELBATTAY, Khalid , DERWIN, Paul , ZHONG, Bo , KOMATSU, Masaya
Abstract: Disclosed is a method for controlling a lithographic process for exposing a pattern on an exposure field, the method comprising: obtaining an initial spatial profile associated with a spatial variation of a performance parameter for a first layer across a sub-field of the exposure field; decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus to correct the spatial variation of the performance parameter and a second component spatial profile for controlling another apparatus or another layer to correct the spatial variation of the performance parameter; and co-optimizing the first and second component spatial profiles to achieve a better correction of the spatial variation of the performance parameter in comparison to correction of the spatial variation of the performance parameter based on using the initial spatial profile for controlling the lithographic apparatus.
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公开(公告)号:EP4050328A1
公开(公告)日:2022-08-31
申请号:EP21159169.8
申请日:2021-02-25
Applicant: ASML Netherlands B.V.
Inventor: DOS SANTOS GUZELLA, Thiago , ISHIBASHI, Masashi , SANNO, Noriaki , BASTANI, Vahid , SAHRAEIAN, Reza , SAPUTRA, Putra
IPC: G01N21/956 , G03F7/20 , G05B19/418 , G06N20/00 , H01L21/66
Abstract: Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model, having been trained to predict first metrology data based on second metrology data, wherein the first metrology data is spatially varying metrology data which relates to a first type of measurement of said structures being a measure of yield and said second metrology data is spatially varying metrology data which relates to a second type of measurement of said structures and correlates with said first metrology data; and using said model to obtain said spatially varying process offset.
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10.
公开(公告)号:EP3973358A1
公开(公告)日:2022-03-30
申请号:EP20725523.3
申请日:2020-05-11
Applicant: ASML Netherlands B.V.
Inventor: SMORENBERG, Pieter, Gerardus, Jacobus , SAPUTRA, Putra , ELBATTAY, Khalid , DERWIN, Paul , WERKMAN, Roy , JENSEN, Erik , YU, Hyun-Woo , SARMA, Gautam
IPC: G03F7/20
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