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    METHOD FOR CONTROLLING A MANUFACTURING PROCESS AND ASSOCIATED APPARATUSES
    2.
    发明申请
    METHOD FOR CONTROLLING A MANUFACTURING PROCESS AND ASSOCIATED APPARATUSES 审中-公开

    公开(公告)号：WO2021175527A1

    公开(公告)日：2021-09-10

    申请号：PCT/EP2021/052492

    申请日：2021-02-03

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEN BERGE, Peter ,  STEEN, Steven, Erik ,  SMORENBERG, Pieter, Gerardus, Jacobus ,  ELBATTAY, Khalid

    IPC: G03F7/20 ,  H01L21/762 ,  H01L21/20 ,  H01L23/00 ,  H01L21/18

    Abstract: Disclosed is a method for controlling a process of manufacturing semiconductor devices, the method comprising: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data comprising data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on said bonded substrate metrology data, the determining a correction comprising determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS
    3.
    发明申请
    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS 审中-公开

    公开(公告)号：WO2021001129A1

    公开(公告)日：2021-01-07

    申请号：PCT/EP2020/066108

    申请日：2020-06-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  DERWIN, Paul ,  ELBATTAY, Khalid

    IPC: G03F7/20

    Abstract: Disclosed is a method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method comprising: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining said intra-field correction based at least partially on said accuracy metric.

    METHOD FOR DETERMINING A SAMPLING SCHEME, A SEMICONDUCTOR SUBSTRATE MEASUREMENT APPARATUS, A LITHOGRAPHIC APPARATUS
    4.
    发明公开
    METHOD FOR DETERMINING A SAMPLING SCHEME, A SEMICONDUCTOR SUBSTRATE MEASUREMENT APPARATUS, A LITHOGRAPHIC APPARATUS 审中-公开

    公开(公告)号：EP4235306A2

    公开(公告)日：2023-08-30

    申请号：EP23173939.2

    申请日：2020-05-11

    Applicant: ASML Netherlands B.V.

    Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  ELBATTAY, Khalid ,  DERWIN, Paul ,  WERKMAN, Roy ,  JENSEN, Erik ,  YU, Hyun-Woo ,  SARMA, Gautam

    IPC: G03F7/20

    Abstract: The invention provides a method of obtaining a fingerprint model for modelling a spatial distribution of a performance parameter over a portion of a substrate, the method comprising: defining an initial fingerprint model related to the spatial distribution of the performance parameter over the portion as a parameterized combination of basis functions; determining parameter values for the parameterized combination of basis functions based on pre-knowledge, and determining the fingerprint model for modelling the spatial distribution of the performance parameter over the portion of the substrate, based on a measurement set representing the performance parameter over the portion of a set of one or more semiconductor substrates and the initial fingerprint model, whereby a ratio of at least two parameter values of the basis functions as determined in the initial fingerprint model is kept constant or at least part of the shape of the initial fingerprint model is maintained in the fingerprint model.

    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS
    7.
    发明公开
    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS 审中-公开

    公开(公告)号：EP3767391A1

    公开(公告)日：2021-01-20

    申请号：EP19186820.7

    申请日：2019-07-17

    Applicant: ASML Netherlands B.V.

    Inventor： SMORENBERG, Pieter Gerardus Jacobus ,  SAPUTRA, Putra ,  DERWIN, Paul ,  ELBATTAY, Khalid

    IPC: G03F7/20

    Abstract: Disclosed is a method for determining an intra-field correction for sub-field control of a lithographic process for exposing a pattern on an exposure field of a substrate, the exposure field comprising a plurality of sub-fields. The method comprises obtaining a database comprising intra-field fingerprint data linked with historic lithographic apparatus metrology data, determining an estimate for an intra-field fingerprint from lithographic apparatus metrology data and said database; and determining the intra-field correction for the lithographic process based on the estimated intra-field fingerprint.

    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS
    9.
    发明公开
    SUB-FIELD CONTROL OF A LITHOGRAPHIC PROCESS AND ASSOCIATED APPARATUS 审中-公开

    公开(公告)号：EP3734366A1

    公开(公告)日：2020-11-04

    申请号：EP19172479.8

    申请日：2019-05-03

    Applicant: ASML Netherlands B.V.

    Inventor： SAPUTRA, Putra ,  SMORENBERG, Pieter Gerardus Jacobus ,  ELBATTAY, Khalid ,  DERWIN, Paul ,  ZHONG, Bo ,  KOMATSU, Masaya

    IPC: G03F7/20 ,  G03F1/70

    Abstract: Disclosed is a method for controlling a lithographic process for exposing a pattern on an exposure field, the method comprising: obtaining an initial spatial profile associated with a spatial variation of a performance parameter for a first layer across a sub-field of the exposure field; decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus to correct the spatial variation of the performance parameter and a second component spatial profile for controlling another apparatus or another layer to correct the spatial variation of the performance parameter; and co-optimizing the first and second component spatial profiles to achieve a better correction of the spatial variation of the performance parameter in comparison to correction of the spatial variation of the performance parameter based on using the initial spatial profile for controlling the lithographic apparatus.

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