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    Lithographic Focus and Dose Measurement Using A 2-D Target
    1.
    发明申请
    Lithographic Focus and Dose Measurement Using A 2-D Target 有权
    使用2-D靶的光刻焦点和剂量测量

    公开(公告)号：US20140247434A1

    公开(公告)日：2014-09-04

    申请号：US14273707

    申请日：2014-05-09

    Applicant: ASML Netherlands B.V.

    Inventor： Christian Marinus LEEWIS ,  Hugo Augustinus Joseph CRAMER ,  Marcus Adrianus VAN DE KERKHOF ,  Johannes Anna QUAEDACKERS ,  Christine Corine MATTHEUS

    IPC: G03F7/20 ,  G03F1/38

    CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

    Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

    Abstract translation: 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

    Method of Measuring a Characteristic
    5.
    发明申请
    Method of Measuring a Characteristic 审中-公开
    测量特性的方法

    公开(公告)号：US20140199634A1

    公开(公告)日：2014-07-17

    申请号：US14213649

    申请日：2014-03-14

    Applicant: ASML Netherlands B.V.

    Inventor： Johannes Anna QUAEDACKERS ,  Paul Christiaan HINNEN ,  Antonie Gaston Marie KIERS ,  Christian Marinus LEEWIS

    IPC: G03F7/00

    CPC classification number: G03F7/0035 ,  G03F7/70466

    Abstract: During a multiple patterning process every nth element of the pattern is removed. The removal of the elements of the patterns happens after the pattern has been printed into the radiation sensitive material or etched into substrate. Advantageously, the original mask is not varied, and another exposure step is used to remove the elements of the pattern.

    Abstract translation: 在多次图案化处理期间，除去图案的每个第n个元素。 在将图案印刷到辐射敏感材料中或蚀刻到基底中之后，去除图案的元素。 有利地，原始掩模不变，并且使用另一曝光步骤来去除图案的元件。

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