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    OPTIMIZATION OF TARGET ARRANGEMENT AND ASSOCIATED TARGET
    1.
    发明申请
    OPTIMIZATION OF TARGET ARRANGEMENT AND ASSOCIATED TARGET 审中-公开
    目标安排和相关目标的优化

    公开(公告)号：WO2015124397A1

    公开(公告)日：2015-08-27

    申请号：PCT/EP2015/051796

    申请日：2015-01-29

    Applicant: ASML NETHERLANDS B.V.

    Inventor： VAN BUEL, Henricus, Wilhelmus, Maria ,  BELTMAN, Johannes, Marcus, Maria ,  LIU, Xing, Lan ,  SMILDE, Hendrik, Jan, Hidde ,  VAN HAREN, Richard, Johannes, Franciscus

    IPC: G03F7/20 ,  G01N21/93 ,  G01N21/956

    CPC classification number: G03F7/70683 ,  G01N21/93 ,  G01N21/956 ,  G03F7/70633

    Abstract: Disclosed is a method of devising a target arrangement, and associated target and reticle. The target comprises a plurality of gratings, each grating comprising a plurality of substructures. The method comprises the steps of: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may comprise an optimization process comprising modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.

    Abstract translation: 公开了一种设计目标布置以及相关联的目标和掩模版的方法。 目标包括多个光栅，每个光栅包括多个子结构。 该方法包括以下步骤：定义目标区域; 将子结构定位在目标区域内以形成光栅; 以及将辅助特征定位在所述光栅的周边处，所述辅助特征被配置为减少在所述光栅周边处的测量的强度峰值。 该方法可以包括优化过程，其包括使用计量过程建模通过检查目标而获得的合成图像; 并且使用计量过程评估目标布置是否被优化用于检测。

    METROLOGY USING A PLURALITY OF METROLOGY TARGET MEASUREMENT RECIPES
    2.
    发明申请
    METROLOGY USING A PLURALITY OF METROLOGY TARGET MEASUREMENT RECIPES 审中-公开

    公开(公告)号：WO2018095705A1

    公开(公告)日：2018-05-31

    申请号：PCT/EP2017/077958

    申请日：2017-11-01

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CALADO, Victor, Emanuel ,  ZHANG, Youping ,  VAN DER SCHAAR, Maurits ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing, Lan

    IPC: G03F7/20 ,  G01N21/956

    CPC classification number: G03F7/70633 ,  G03F7/70625 ,  G03F7/70683

    Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

    LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND ASSOCIATED DATA PROCESSING APPARATUS AND COMPUTER PROGRAM PRODUCT
    5.
    发明申请
    LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND ASSOCIATED DATA PROCESSING APPARATUS AND COMPUTER PROGRAM PRODUCT 审中-公开
    光刻设备，设备制造方法和相关的数据处理设备和计算机程序产品

    公开(公告)号：WO2017140532A1

    公开(公告)日：2017-08-24

    申请号：PCT/EP2017/052639

    申请日：2017-02-07

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CEKLI, Hakki, Ergun ,  ISHIBASHI, Masashi ,  VAN DIJK, Leon, Paul ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing, Lan ,  JUNGBLUT, Reiner, Maria ,  AFFENTAUSCHEGG, Cedric, Marc ,  OTTEN, Ronald, Henricus, Johannes

    IPC: G03F9/00 ,  G03F7/20

    CPC classification number: G03F9/7034 ,  G03F7/70258 ,  G03F7/70633 ,  G03F7/70783 ,  G03F9/7011

    Abstract: A lithographic process includes clamping (CL) a substrate (W) onto a substrate support (WT), measuring (AS) positions of marks across the clamped substrate, and applying a pattern to the clamped using the positions measured. A correction (WCOR) is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic (402, 404, 406) in the positions measured across the substrate. In one embodiment the correction is generated by firstly inferring one or more shape characteristics of the warped substrate (FFW) using the measured positions and other information (CDAT). Then, based on the inferred shape characteristics, a clamping model is applied (WCM) to simulate deformation of the warped substrate in response to clamping. Thirdly said correction (LCOR) is calculated based on the simulated deformation. Some or all of these steps may be integrated and/or implemented by a look-up table.

    Abstract translation: 光刻工艺包括将衬底（W）夹持（CL）到衬底支撑件（WT）上，测量横跨夹持衬底的标记位置（AS），以及使用图案将图案施加到被夹持的衬底 测量的位置。 基于识别穿过衬底测量的位置中的翘曲感应特性（402,404,406），将校正（WCOR）应用于在衬底的局部区域中定位施加的图案。 在一个实施例中，通过首先使用所测量的位置和其他信息（CDAT）推断扭曲基板（FFW）的一个或多个形状特征来生成校正。 然后，基于推断的形状特征，应用夹紧模型（WCM）来模拟响应于夹紧的翘曲基底的变形。 第三，所述校正（LCOR）是基于模拟变形计算的。 这些步骤中的一部分或全部可以通过查找表来集成和/或实现。

    LITHOGRAPHIC METHOD AND LITHOGRAPHIC APPARATUS
    6.
    发明申请
    LITHOGRAPHIC METHOD AND LITHOGRAPHIC APPARATUS 审中-公开
    光刻方法和平面设备

    公开(公告)号：WO2016146217A1

    公开(公告)日：2016-09-22

    申请号：PCT/EP2015/079282

    申请日：2015-12-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CEKLI, Hakki, Ergün ,  LIU, Xing, Lan ,  VAN DER SANDEN, Stefan, Cornelis, Theodorus ,  VAN HAREN, Richard, Johannes, Franciscus

    IPC: G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/70633 ,  G03F7/70258 ,  G03F7/70358 ,  G03F9/7046

    Abstract: A lithographic method comprises exposing number of fields on a substrate, obtaining data about a field (1001) and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields (408, 1011a, 1011b) of the field based on the obtained data. Data relating to each sub-field is processed to produce sub- field correction information. The subsequent exposures of the sub-fields are corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field (408) within a field, overlay error can be minimized for critical features, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to sub-fields rather than only the whole field, residual errors (1103) can be reduced in each sub-field.

    Abstract translation: 光刻方法包括曝光基底上的场数，获得关于场（1001）的数据并校正后续曝光中场的曝光。 该方法包括基于获得的数据来定义场的一个或多个子场（408,1011a，1011b）。 处理与每个子场相关的数据以产生子场校正信息。 使用子场校正信息校正子场的后续曝光。 通过参考场内的特定子场（408）的数据来控制光刻设备，可以将关键特征的覆盖误差最小化，而不是在整个场上进行平均。 通过参照子场控制光刻设备而不仅仅是整个场，可以在每个子场中减少残留误差（1103）。

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