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    METHOD TO PROVIDE A PATTERNED ORIENTATION TEMPLATE FOR A SELF-ASSEMBLABLE POLYMER
    1.
    发明申请
    METHOD TO PROVIDE A PATTERNED ORIENTATION TEMPLATE FOR A SELF-ASSEMBLABLE POLYMER 审中-公开
    为自组装聚合物提供图案方向模板的方法

    公开(公告)号：WO2013050338A1

    公开(公告)日：2013-04-11

    申请号：PCT/EP2012/069400

    申请日：2012-10-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： NGUYEN, Thanh ,  FINDERS, Jozef ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  VAN DER HEIJDEN, Eddy ,  MEESSEN, Hieronymus ,  KOOLE, Roelof ,  PEETERS, Emiel ,  VAN HEESCH, Chris ,  BRIZARD, Aurelie ,  BOOTS, Henri ,  DRUZHININA, Tamara ,  DE RUITER, Jessica

    IPC: B81C1/00

    CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

    Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

    Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴线延伸的不连续第一区域的平行行的二维阵列，并且沿着正交的第二轴相互间隔开并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

    METHOD AND SYSTEM FOR DETERMINING A LITHOGRAPHIC PROCESS PARAMETER
    2.
    发明申请
    METHOD AND SYSTEM FOR DETERMINING A LITHOGRAPHIC PROCESS PARAMETER 审中-公开

    公开(公告)号：WO2010037472A3

    公开(公告)日：2010-04-08

    申请号：PCT/EP2009/006652

    申请日：2009-09-15

    Applicant: ASML NETHERLANDS B.V. ,  MEESSEN, Hieronymus ,  MATTHEUS, Christine ,  LEWIS, Christian

    Inventor： MEESSEN, Hieronymus ,  MATTHEUS, Christine ,  LEWIS, Christian

    IPC: G03F7/20

    Abstract: The present invention relates to a method for determining parameter value related to a lithographic process by which a marker structure has been applied on a product substrate based on obtaining calibration measurement data, with an optical detection apparatus, from a calibration marker structure set on a calibration substrate, including at least one calibration marker structure created using different known values of the parameter. The method further determines a mathematical model by using said known values of said at least one parameter and by employing a regression technique on said calibration measurement data, obtains product measurement data, with said optical detection apparatus, from a product marker structure on the product substrate, with at least one product marker structure being exposed with an unknown value of said at least one parameter. Furthermore, the method determines the unknown value of at least one parameter for the product substrate from the obtained product measurement data, wherein the optical detection apparatus may be a SEM and the obtained data includes an image obtained by the SEM.

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