公开(公告)号：WO2013050338A1

公开(公告)日：2013-04-11

申请号：PCT/EP2012/069400

申请日：2012-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： NGUYEN, Thanh ,  FINDERS, Jozef ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  VAN DER HEIJDEN, Eddy ,  MEESSEN, Hieronymus ,  KOOLE, Roelof ,  PEETERS, Emiel ,  VAN HEESCH, Chris ,  BRIZARD, Aurelie ,  BOOTS, Henri ,  DRUZHININA, Tamara ,  DE RUITER, Jessica

IPC: B81C1/00

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴线延伸的不连续第一区域的平行行的二维阵列，并且沿着正交的第二轴相互间隔开并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

公开(公告)号：WO2010076254A1

公开(公告)日：2010-07-08

申请号：PCT/EP2009/067620

申请日：2009-12-21

Applicant: ASML Netherlands B.V. ,  MEGENS, Henricus ,  FINDERS, Jozef ,  KIERS, Antoine ,  QUAEDACKERS, Johannes ,  VAN DER SCHAAR, Maurits ,  LEEWIS, Christian ,  VAN LAARHOVEN, Hendrik

Inventor： MEGENS, Henricus ,  FINDERS, Jozef ,  KIERS, Antoine ,  QUAEDACKERS, Johannes ,  VAN DER SCHAAR, Maurits ,  LEEWIS, Christian ,  VAN LAARHOVEN, Hendrik

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: A first target population and a second target population are etched into a substrate. The second target population has an asymmetry with respect to the first target population. This can allow the different target populations to be distinguished and characteristics of the different target populations determined.

Abstract translation: 将第一目标群体和第二目标群体蚀刻到基底中。 第二个目标人口与第一个目标人群有不对称性。 这可以允许区分不同的目标群体并确定不同目标群体的特征。

公开(公告)号：WO2014139795A1

公开(公告)日：2014-09-18

申请号：PCT/EP2014/053694

申请日：2014-02-26

Applicant: ASML NETHERLANDS B.V.

Inventor： FINDERS, Jozef ,  WUISTER, Sander ,  VAN DER HEIJDEN, Eddy ,  BOOTS, Henri

IPC: B81C1/00 ,  G03F7/20

CPC classification number: H01L21/76816 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/2002 ,  G03F7/2004 ,  H01L21/02345 ,  H01L21/268 ,  H01L21/31058 ,  H01L21/31133

Abstract: A method of forming a plurality of regularly spaced lithography features, e.g. contact holes, including: providing a trench on a substrate, the trench having opposing side-walls and a base, with the side-walls having a width therebetween, wherein the trench is formed by photolithography including exposing the substrate using off-axis illumination whereby a modulation is provided to the side-walls of the trench; providing a self-assemblable block copolymer having first and second blocks in the trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in the trench, the layer having first domains of the first block and second domains of the second block; and selectively removing the first domain to form at least one regularly spaced row of lithography features having the second domain along the trench.

Abstract translation: 一种形成多个规则间隔的光刻特征的方法，例如。 接触孔，包括：在衬底上提供沟槽，所述沟槽具有相对的侧壁和底座，其中所述侧壁之间具有宽度，其中所述沟槽通过光刻形成，包括使用离轴照明曝光所述衬底，由此 向沟槽的侧壁提供调制; 提供在沟槽中具有第一和第二嵌段的自组装嵌段共聚物; 使自组装嵌段共聚物自组装成沟槽中的有序层，该层具有第一嵌段的第一区域和第二嵌段的第二区域; 以及选择性地移除所述第一区域以形成沿着所述沟槽具有所述第二结构域的至少一个规则间隔的光刻特征行。

公开(公告)号：WO2014023589A1

公开(公告)日：2014-02-13

申请号：PCT/EP2013/065824

申请日：2013-07-26

Applicant: ASML NETHERLANDS B.V.

Inventor： FINDERS, Jozef ,  DRUZHININA, Tamara ,  PEETERS, Emiel ,  WUISTER, Sander ,  VAN HEESCH, Chris ,  VAN DER HEIJDEN, Eddy ,  BOOTS, Henri

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G06F17/5009 ,  G06F17/5068

Abstract: A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.

Abstract translation: 设计外延模板以将基底上的嵌段共聚物自组装成有序目标图案的方法包括提供初级外延模板设计，然后改变设计以优化图案保真度统计量，例如放置误差，相对于 通过对预测的自组装嵌段共聚物图案进行模拟和优化作为不同设计参数的函数的图案放置来实现目标图案。 除了改变设计参数以优化模式保真度统计量之外，在模拟预测模式之前还包括模板设计中的随机误差，以便在实践中补偿预期的模板不准确性。 除了设计参数的系统变化之外，在模板设计中包括一个现实的随机误差，可以改进模板设计优化，使得结果对于在实践中可能是不可避免的误差较不敏感。

公开(公告)号：WO2013152928A1

公开(公告)日：2013-10-17

申请号：PCT/EP2013/055681

申请日：2013-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander ,  BANINE, Vadim ,  FINDERS, Jozef ,  KOOLE, Roelof ,  PEETERS, Emiel ,  SINGH, Harmeet

IPC: G03F7/00

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

公开(公告)号：WO2013143813A1

公开(公告)日：2013-10-03

申请号：PCT/EP2013/054502

申请日：2013-03-06

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Harmeet ,  BANINE, Vadim ,  FINDERS, Jozef ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。