公开(公告)号：WO2013050338A1

公开(公告)日：2013-04-11

申请号：PCT/EP2012/069400

申请日：2012-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： NGUYEN, Thanh ,  FINDERS, Jozef ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  VAN DER HEIJDEN, Eddy ,  MEESSEN, Hieronymus ,  KOOLE, Roelof ,  PEETERS, Emiel ,  VAN HEESCH, Chris ,  BRIZARD, Aurelie ,  BOOTS, Henri ,  DRUZHININA, Tamara ,  DE RUITER, Jessica

IPC: B81C1/00

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴线延伸的不连续第一区域的平行行的二维阵列，并且沿着正交的第二轴相互间隔开并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

公开(公告)号：WO2012175343A1

公开(公告)日：2012-12-27

申请号：PCT/EP2012/060784

申请日：2012-06-07

Applicant: ASML NETHERLANDS B.V. ,  BRIZARD, Aurelie ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

Inventor： BRIZARD, Aurelie ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

IPC: G03F7/00 ,  C08G83/00

CPC classification number: G03F7/004 ,  B82Y10/00 ,  B82Y40/00 ,  C30B19/00 ,  G03F7/0002

Abstract: A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.

Abstract translation: 适于自组装以在基底上形成有序图案的嵌段共聚物具有第一和第二嵌段，其末端部分共价键合到第一嵌段的末端。 末端部分的分子量为嵌段共聚物的分子量的20％以下，末端部分对第一嵌段具有低的化学亲和力。 末端部分可以帮助有序阵列的域的精确位置放置并且导致改进的临界尺寸均匀性和/或减少的线边缘粗糙度。 所述聚合物可以与骨架外延模板组合使用，其中末端部分被选择为与模板的侧壁缔合。 这可以减少侧壁处的聚合物域的不希望的聚集和/或有助于域放置精度。

公开(公告)号：WO2012084558A1

公开(公告)日：2012-06-28

申请号：PCT/EP2011/072379

申请日：2011-12-09

Applicant: ASML NETHERLANDS B.V. ,  PEETERS, Emiel ,  KETELAARS, Wilhelmus ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KOOLE, Roelof ,  VAN HEESCH, Chris

Inventor： PEETERS, Emiel ,  KETELAARS, Wilhelmus ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KOOLE, Roelof ,  VAN HEESCH, Chris

IPC: G03F7/00

CPC classification number: C30B19/12 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate.

Abstract translation: 公开了一种方法，其涉及在衬底上形成化学外延或者石墨电极特征之后，但在自组装聚合物的沉积和取向之前，将中性取向模板层沉积到衬底上。 取向层被布置成与基底结合，但不具有某些特征，使得其可以容易地通过真空或用有机溶剂漂洗除去。 中性取向层具有与自组装聚合物中的嵌段相符的化学亲和力，使得不同类型的块润湿中性取向层，使得自组装聚合物中的畴可以沿着衬底表面并排， 界面垂直于衬底表面。 所得到的对准和取向的自组装聚合物本身可以用作衬底的器件光刻的抗蚀剂。

公开(公告)号：WO2013127608A2

公开(公告)日：2013-09-06

申请号：PCT/EP2013/052306

申请日：2013-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： PEETERS, Emiel ,  KETELAARS, Wilhelmus ,  WUISTER, Sander ,  KOOLE, Roelof ,  VAN HEESCH, Chris ,  BRIZARD, Aurelie ,  BOOTS, Henri ,  NGUYEN, Thanh ,  YILDIRIM, Oktay

IPC: G06F7/02

CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer comprising first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition comprising a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract translation: 一种形成图案化学外延模板的方法，用于在基底表面上定向包含第一聚合物嵌段和第二聚合物嵌段的可自组装的嵌段共聚物，所述方法包括施加 底漆组合物施加到表面，所述底漆组合物包含与第一聚合物嵌段具有化学亲和力的第一聚合物部分和与第二聚合物嵌段具有化学亲和力的第二聚合物部分，选择性地暴露表面，底漆层和任何上覆层 光化辐射以提供曝光区域和未曝光区域，使曝光区域中的第一聚合物部分变得不稳定，并且从曝光区域除去不稳定的第一聚合物部分以消耗第一聚合物部分的曝光区域中的底漆层表面以形成 图案化的化学外延模板。

公开(公告)号：WO2012031818A3

公开(公告)日：2012-03-15

申请号：PCT/EP2011/062554

申请日：2011-07-21

Applicant: ASML NETHERLANDS B.V. ,  KOOLE, Roelof ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  PEETERS, Emiel

Inventor： KOOLE, Roelof ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  PEETERS, Emiel

IPC: B81C1/00 ,  H01L21/027

Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

公开(公告)号：WO2011151109A1

公开(公告)日：2011-12-08

申请号：PCT/EP2011/056308

申请日：2011-04-20

Applicant: ASML Netherlands B.V. ,  PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

Inventor： PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

IPC: C08F293/00 ,  G03F7/00 ,  B81C1/00 ,  B82Y10/00 ,  B82Y30/00

CPC classification number: C08F293/00 ,  B05D5/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08F297/04 ,  G03F7/0002 ,  G03F7/004 ,  G03F7/165 ,  G03F7/26

Abstract: A self-assemblable polymer is disclosed, having first and second molecular configurations with the first molecular configuration has a higher Flory Huggins parameter for the self-assemblable polymer than the second molecular configuration, and the self-assemblable polymer is configurable from the first molecular configuration to the second molecular configuration, from the second molecular configuration to the first molecular configuration, or both, by the application of a stimulus. The polymer is of use in a method for providing an ordered, periodically patterned layer of the polymer on a substrate, by ordering and annealing the polymer in its second molecular configuration and setting the polymer when it is in the first molecular configuration. The second molecular configuration provides better ordering kinetics and permits annealing of defects near its order/disorder transition temperature, while the first molecular configuration, with a higher order/disorder transition temperature, provides low line edge/width roughness for the pattern formed on setting.

Abstract translation: 公开了具有第一和第二分子构型的自组装聚合物，其具有第一分子构型，其具有比第二分子构型更高的可自组装聚合物的Flory Huggins参数，并且可自组装聚合物可从第一分子构型 到第二分子构型，从第二分子构型到第一分子构型，或两者都通过施加刺激。 聚合物可用于通过在其第二分子构型中排列和退火聚合物并在聚合物处于第一分子构型时设置聚合物，从而在基底上提供聚合物的有序周期性图案化层的方法。 第二种分子结构提供更好的排序动力学，并允许在其顺序/无序转变温度附近的缺陷退火，而具有较高阶/无序转变温度的第一分子构型为设置上形成的图案提供了低的线边缘/宽度粗糙度。

公开(公告)号：WO2013152928A1

公开(公告)日：2013-10-17

申请号：PCT/EP2013/055681

申请日：2013-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander ,  BANINE, Vadim ,  FINDERS, Jozef ,  KOOLE, Roelof ,  PEETERS, Emiel ,  SINGH, Harmeet

IPC: G03F7/00

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

公开(公告)号：WO2013143813A1

公开(公告)日：2013-10-03

申请号：PCT/EP2013/054502

申请日：2013-03-06

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Harmeet ,  BANINE, Vadim ,  FINDERS, Jozef ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。

公开(公告)号：WO2013104499A1

公开(公告)日：2013-07-18

申请号：PCT/EP2012/075989

申请日：2012-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： BRIZARD, Aurelie ,  KOOLE, Roelof ,  PEETERS, Emiel

IPC: B82Y30/00 ,  B81C1/00

CPC classification number: B05D3/107 ,  B05D1/28 ,  B05D1/60 ,  B05D3/007 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002

Abstract: A method of forming a self-assembled block polymer layer, oriented to form an ordered array of alternating domains, is disclosed. The method involves providing a layer of the self-assemblable block copolymer on the substrate and depositing a first surfactant onto the external surface of the layer prior to inducing self-assembly of the layer to form the ordered array of domains. The first surfactant has a hydrophobic tail and a hydrophilic head group and acts to reduce the interfacial energy at the external surface of the block copolymer layer in order to promote formation of assembly of the block copolymer polymer into an ordered array having the alternating domains.

Abstract translation: 公开了一种形成定向以形成交替畴的有序阵列的自组装嵌段聚合物层的方法。 该方法包括在衬底上提供一层可自组装的嵌段共聚物，并在引导层的自组装形成畴的有序阵列之前，在层的外表面上沉积第一表面活性剂。 第一表面活性剂具有疏水性尾巴和亲水性头基，并且用于降低嵌段共聚物层的外表面处的界面能，以促进嵌段共聚物聚合物组装成具有交替域的有序阵列。

公开(公告)号：WO2011128120A1

公开(公告)日：2011-10-20

申请号：PCT/EP2011/050668

申请日：2011-01-19

Applicant: ASML NETHERLANDS B.V. ,  PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

Inventor： PEETERS, Emiel ,  WUISTER, Sander ,  KOOLE, Roelof

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: A method for providing an ordered polymer layer at a surface of a substrate includes depositing a self-assemblable polymer layer directly onto a primer layer on a substrate to provide an interface between the self-assemblable polymer layer and the primer layer, and treating the self-assemblable polymer layer to provide self-assembly into an ordered polymer layer, such as a block copolymer, having first and second domain types at the interface. The primer layer is adapted to improve its chemical affinity to each domain type at the interface, in response to the presence of the respective domain type in the self-assembled polymer at the interface during the self-assembly of the self-assemblable polymer layer into the ordered polymer layer. This may lead to reduction in defect levels and/or improved persistence length for the ordered polymer layer. The method may be useful for forming resist layers for use in device lithography.

Abstract translation: 在衬底的表面提供有序聚合物层的方法包括将可自组装的聚合物层直接沉积在基底上的底漆层上，以提供可自组装的聚合物层和底漆层之间的界面，以及处理自身 可以将聚合物层自组装成有序聚合物层，例如在界面处具有第一和第二域类型的嵌段共聚物。 响应于在自组装聚合物层的自组装期间在界面处的自组装聚合物中存在相应的畴型，引物层适于改善其在界面处对每种畴型的化学亲和力 有序聚合物层。 这可能导致有序聚合物层的缺陷水平和/或改善的持续长度的降低。 该方法可用于形成用于器件光刻的抗蚀剂层。