公开(公告)号：WO2013092094A1

公开(公告)日：2013-06-27

申请号：PCT/EP2012/073296

申请日：2012-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Harmeet

IPC: H05G2/00

CPC classification number: H05G2/005 ,  G03F7/70033 ,  H05G2/008

Abstract: A method of treating or operating a radiation source apparatus (SO), for instance for generating EUV radiation for device lithography, is disclosed. The method is for use with radiation source apparatus having a chamber (220) arranged to hold a plasma (210) for radiation generation, with the plasma excited from a metal fuel in use by a first plasma generator (LA). The method comprises flowing a gas (via 41) comprising hydrogen and boron hydride through the chamber with the gas in an excited state comprising free radicals of hydrogen. The presence of the boron hydride with the hydrogen radicals in the gas is effective cleaning or reducing build-up of metal fuel deposits on surfaces of the chamber or associated optics, particularly on reflective surfaces of the radiation collector mirror (CO). The method is particularly suitable for use with tin fuel. The hydrogen free radicals may be generated by the plasma (210) for radiation generation itself, or may involve exciting the gas using a second, separate free radical generator (41). The method may be used to reduce deposition whilst the radiation source apparatus is in use for generation of radiation or may be applied as a treatment for cleaning whilst radiation generation is interrupted.

Abstract translation: 公开了一种处理或操作辐射源装置（SO）的方法，例如用于产生装置光刻的EUV辐射。 该方法与辐射源装置一起使用，该辐射源装置具有设置成保持用于辐射产生的等离子体（210）的室（220），其中等离子体由第一等离子体发生器（LA）使用的金属燃料激发。 该方法包括使包含氢气和氢化硼的气体（通孔41）通过该气体以包含氢的自由基的激发态流动。 硼氢化物与气体中的氢原子的存在有效地清洁或减少金属燃料沉积物在室或相关光学元件表面上的积聚，特别是在辐射收集镜（CO）的反射表面上。 该方法特别适用于锡燃料。 氢自由基可以由用于辐射产生本身的等离子体（210）产生，或者可以包括使用第二分离的自由基发生器（41）激发气体。 该方法可以用于在放射源装置用于产生辐射的同时减少沉积，或者可以将其用作清洁处理，同时辐射产生被中断。

公开(公告)号：WO2014044496A3

公开(公告)日：2014-03-27

申请号：PCT/EP2013/067623

申请日：2013-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： AKKERMANS, Johannes, Antonius, Gerardus ,  LEMMEN, Bas, Pieter ,  HUIBERTS, Sjoerd, Martijn ,  LOF, Joeri ,  RUTGERS, Petrus, Theodorus ,  HOL, Sven, Antoin, Johan ,  SINGH, Harmeet ,  HEIJMANS, Peter, Michel, Silvester, Maria

IPC: G03F7/20 ,  H02K41/02 ,  H02K41/03 ,  H02K1/14 ,  H02K1/16 ,  H02K3/52 ,  H02K19/06 ,  H01L21/68 ,  H02K19/10 ,  H02P6/00

Abstract: A reluctance actuator assembly comprising a reluctance actuator, a flux sensor to measure a magnetic flux in a gap of the reluctance actuator, and a flux amplifier to drive an actuator coil of the reluctance actuator based on a flux set point and the flux measured by the flux sensor. A method comprising providing to the flux amplifier a flux setpoint, the flux setpoint comprising a time constant component and a sinusoidally varying component at an excitation frequency, measuring a force generated by the reluctance actuator in response to the flux setpoint, and calibrating the reluctance actuator assembly from the measured force.

公开(公告)号：WO2013167463A1

公开(公告)日：2013-11-14

申请号：PCT/EP2013/059157

申请日：2013-05-02

Applicant: ASML NETHERLANDS B.V.

Inventor： KOEVOETS, Adrianus, Hendrik ,  CADEE, Theodorus, Petrus, Maria ,  SINGH, Harmeet

IPC: G03F7/20

CPC classification number: G03F7/70858 ,  G03F7/70758

Abstract: A lithographic apparatus comprises a first body (B1; MO) comprising a heat source (HS; CL), a second body (B2; ME) and a heater device (HD). The second body has a facing surface (FS) facing the first body via a gap (GA) between the first and second bodies. The heat source is for providing a heat flux to the second body via the gap. The heater device is attached to the facing surface. The heater device is configured to provide a further heat flux to the second body.

Abstract translation: 光刻设备包括包括热源（HS; CL），第二主体（B2; ME）和加热器装置（HD）的第一主体（B1; MO）。 第二主体具有经由第一和第二主体之间的间隙（GA）面向第一主体的面对表面（FS）。 热源用于经由间隙向第二体提供热通量。 加热器装置连接到相对表面。 加热器装置被配置为向第二主体提供另外的热通量。

公开(公告)号：WO2013117518A2

公开(公告)日：2013-08-15

申请号：PCT/EP2013/052154

申请日：2013-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： CADEE, Theodorus, Petrus, Maria ,  BANINE, Vadim, Yevgenyevich ,  ZAAL, Koen, Jacobus, Johannes, Maria ,  BADIE, Ramin ,  SINGH, Harmeet

IPC: G03F7/20

CPC classification number: G03F7/70725 ,  G03F7/70708 ,  G03F7/70733 ,  H01L21/6875

Abstract: A lithographic apparatus has a support that is provided with burls for holding an object. The support has been fabricated with a lithographic manufacturing method, e.g., a MEMS-technology, so as to create burls whose orientations or positions are individually electrically controllable.

Abstract translation: 光刻设备具有一个支撑件，该支撑件设置有用于保持物体的毛刺。 已经利用诸如MEMS技术的光刻制造方法来制造支撑件，以便产生其取向或位置可单独地电可控制的孔。

公开(公告)号：WO2013152928A1

公开(公告)日：2013-10-17

申请号：PCT/EP2013/055681

申请日：2013-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander ,  BANINE, Vadim ,  FINDERS, Jozef ,  KOOLE, Roelof ,  PEETERS, Emiel ,  SINGH, Harmeet

IPC: G03F7/00

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。

公开(公告)号：WO2013143813A1

公开(公告)日：2013-10-03

申请号：PCT/EP2013/054502

申请日：2013-03-06

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Harmeet ,  BANINE, Vadim ,  FINDERS, Jozef ,  WUISTER, Sander ,  KOOLE, Roelof ,  PEETERS, Emiel

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/162 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/165 ,  G03F7/2022 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

Abstract: A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

Abstract translation: 公开了一种在基底上形成图案化模板以引导自组装嵌段共聚物取向的方法。 该方法包括在衬底上提供正色调抗蚀剂的抗蚀剂层，并通过光刻法用光化（例如UV）辐射过度曝光抗蚀剂，以在抗蚀剂层的连接区域之间的界面处暴露抗蚀剂层的亚分辨率未曝光抗蚀剂部分 抗蚀剂和基材。 在除去暴露区域之后残留在界面处的抗蚀剂部分为化学外延模板提供了基础。 该方法可以允许简单的直接光刻以形成图案化的化学外延模板，并且可选地包括精确地共同对准的图案电子特征和/或衬底对准特征。

公开(公告)号：WO2013113537A2

公开(公告)日：2013-08-08

申请号：PCT/EP2013/050395

申请日：2013-01-10

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Harmeet

IPC: G03F7/20

CPC classification number: G03F7/70575 ,  B82Y10/00 ,  G02B5/1838 ,  G02B5/203 ,  G02B5/208 ,  G03F7/70191 ,  G03F7/702 ,  G21K1/062 ,  G21K1/067 ,  G21K2201/064

Abstract: A spectral purity filter is integrated with a collector optic (CO) in an EUV lithography apparatus. The element is coated on at least one surface (410) with a multilayer stack comprising a plurality of alternating material layers (for example Mo, Si) suitable for reflecting radiation of EUV wavelength. To manufacture the element, a substrate (402) is provided with a three-dimensional profile (410a, 412, 410b) on a scale much larger than the wavelength of EUV radiation. The multilayer stack is then applied as a series conformal coatings formed by atomic layer deposition on the substrate after formation of said profile. The profile, as reproduced in the MLM coating (310a, 312, 310b), forms a spectral purity filter. Unwanted radiation such as infrared radiation will be scattered or diffracted so that a reduced portion is reflected in the same direction as the reflected EUV radiation. The profile may be designed to form a phase grating, or a scattering texture.

Abstract translation: 光谱纯度滤光片与EUV光刻设备中的集光器（CO）集成。 该元件被涂覆在至少一个表面（410）上，该多层叠层包括适于反射EUV波长辐射的多个交替材料层（例如Mo，Si）。 为了制造元件，衬底（402）在比EUV辐射的波长更大的刻度上具有三维轮廓（410a，412,410b）。 然后在形成所述轮廓之后，将多层叠层作为由原子层沉积形成的系列保形涂层施加在衬底上。 如在MLM涂层（310a，312,310b）中再现的轮廓形成光谱纯度过滤器。 诸如红外辐射的不需要的辐射将被散射或衍射，使得减少的部分在与反射的EUV辐射相同的方向上被反射。 轮廓可以被设计成形成相位光栅或散射纹理。

公开(公告)号：WO2013156236A1

公开(公告)日：2013-10-24

申请号：PCT/EP2013/055597

申请日：2013-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： LAFARRE, Raymond ,  DZIOMKINA, Nina ,  KARADE, Yogesh ,  RODENBURG, Elisabeth ,  SINGH, Harmeet

IPC: G03F7/20

CPC classification number: G03F7/70733 ,  G03F7/70341 ,  G03F7/70708 ,  H01L21/6831 ,  H01L21/6875

Abstract: A substrate holder for use in a lithographic apparatus, the substrate holder including: a main body (100) having a surface (107); a plurality of burls (106) projecting from the surface and having end surfaces to support a substrate; and a thin film stack (200) on the main body surface and forming an electric component, the thin film stack having a conductive layer (108) configured to distribute electrical charge substantially uniformly throughout a plane of the stack in which the conductive layer is positioned.

Abstract translation: 一种用于光刻设备的衬底保持器，所述衬底保持器包括：具有表面（107）的主体（100）; 从所述表面突出并具有支撑基板的端面的多个毛刺（106）; 以及在所述主体表面上的薄膜叠层（200），并且形成电气部件，所述薄膜叠层具有导电层（108），所述导电层被配置成基本上均匀地分布在所述堆叠的平面内的导电层所位于的平面上 。

公开(公告)号：WO2012136420A1

公开(公告)日：2012-10-11

申请号：PCT/EP2012/053534

申请日：2012-03-01

Applicant: ASML NETHERLANDS B.V. ,  BANINE, Vadim ,  WAGNER, Christian ,  SINGH, Harmeet

Inventor： BANINE, Vadim ,  WAGNER, Christian ,  SINGH, Harmeet

IPC: G03F7/20 ,  G21K1/06 ,  G02B5/08

CPC classification number: G03F7/708 ,  B82Y10/00 ,  G02B5/0825 ,  G02B5/0891 ,  G03F7/70958 ,  G21K1/062

Abstract: A mirror for reflection of EUV radiation having a wavelength from 5 to 20nm has a multilayer stack of pairs of alternating layers materials having different refractive indices with a protective region is disposed on the stack, the protective region having from 1 to 5 pairs of alternating layers of materials of differing refractive indices disposed on the multilayer stack, so that alternation of magnitude of refractive index continues from the multilayer stack through the protective region. The mirror is arranged so that radiation for reflection is incident upon the protective region before being incident upon the multilayer stack. The materials of the protective region are selected to have a high resistance to blister formation when subjected to bombardment by hydrogen atoms or ions, for instance from an EUV plasma source, in use. For instance, the multilayer stack may be of silicon/molybdenum, with the protective region of silicon nitride/molybdenum. The protective region acts to prevent hydrogen atoms or ions penetrating into and blistering the mirror, but without resulting in excessive losses in the reflectivity of the mirror. The mirror is particularly useful as a collector mirror such as a normal incidence collector for laser produced plasma EUV sources and is useful for device lithography and in lithography apparatus.

Abstract translation: 用于反射具有5至20nm的波长的EUV辐射的反射镜具有在堆叠上设置具有不同折射率的具有不同折射率的交替层材料对的多层堆叠，所述保护区域具有1至5对交替层 的折射率不同的材料设置在多层堆叠上，使得折射率的大小的变化从多层堆叠继续通过保护区域。 反射镜被布置成使得用于反射的辐射在入射到多层堆叠之前入射到保护区域上。 选择保护区域的材料，以在使用时由氢原子或离子（例如来自EUV等离子体源）进行轰击时具有高的起泡形成能力。 例如，多层堆叠可以是具有氮化硅/钼的保护区域的硅/钼。 保护区域用于防止氢原子或离子渗入和起泡反射镜，但不会导致反射镜的反射率过度损失。 该反射镜特别适用于诸如用于激光产生的等离子体EUV源的正入射收集器的集电镜，并且可用于器件光刻和光刻设备。

公开(公告)号：EP2839342A1

公开(公告)日：2015-02-25

申请号：EP13711622.4

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： LAFARRE, Raymond ,  DZIOMKINA, Nina ,  KARADE, Yogesh ,  RODENBURG, Elisabeth ,  SINGH, Harmeet

IPC: G03F7/20

CPC classification number: G03F7/70733 ,  G03F7/70341 ,  G03F7/70708 ,  H01L21/6831 ,  H01L21/6875

Abstract: A substrate holder for use in a lithographic apparatus, the substrate holder including: a main body (100) having a surface (107); a plurality of burls (106) projecting from the surface and having end surfaces to support a substrate; and a thin film stack (200) on the main body surface and forming an electric component, the thin film stack having a conductive layer (108) configured to distribute electrical charge substantially uniformly throughout a plane of the stack in which the conductive layer is positioned.