公开(公告)号：WO2009116867A3

公开(公告)日：2009-11-12

申请号：PCT/NL2009050132

申请日：2009-03-20

Applicant: ASML NETHERLANDS BV ,  KRIVTSUN VLADIMIR MIHAILOVITC ,  BANINE VADIM YEVGENYEVICH ,  BLEEKER ARNO JAN ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVIT ,  MOORS JOHANNES HUBERTUS JOSEPH ,  CHURILOV SERGEY ,  GLUSHKOV DENIS

Inventor： KRIVTSUN VLADIMIR MIHAILOVITC ,  BANINE VADIM YEVGENYEVICH ,  BLEEKER ARNO JAN ,  IVANOV VLADIMIR VITALEVITCH ,  KOSHELEV KONSTANTIN NIKOLAEVITCH ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  CHURILOV SERGEY ,  GLUSHKOV DENIS

IPC: H05G2/00

CPC classification number: H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in a 6.8 nm range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd, or Tb, or a Tb-based composition configured to reduce a melting temperature of Tb.

Abstract translation: 目标材料被配置为用于构造和布置成产生具有6.8nm范围波长的辐射束的源。 目标材料包括配置成改变Gd或Tb的熔融温度的Gd基组合物或构造成降低Tb的熔融温度的Tb基组合物。

公开(公告)号：NL1036614A1

公开(公告)日：2009-09-22

申请号：NL1036614

申请日：2009-02-23

Applicant: ASML NETHERLANDS BV

Inventor： KRIVTSUN VLADIMIR MIHAILOVITCH ,  BANINE VADIM YEVGENYEVICH ,  BLEEKER ARNO JAN ,  IVANOV VLADIMIR VITALEVICH ,  KOSHELEV KONSTANTIN NIKOLAEVICH ,  MOORS JOHANNES HUBERTUS JOSEPH ,  CHURILOV SERGEY ,  GLUSHKOV DENIS

IPC: H05G2/00 ,  G03F7/20