Abstract:
PROBLEM TO BE SOLVED: To provide an alignment system for a lithography projecting apparatus in which accuracy of positioning and/or robust properties is improved.SOLUTION: An alignment system for a lithographic apparatus comprises: a positioning radiation source 1; a detection system having a first detector channel and a second detector channel; and a position determining unit that communicates with the detection system. The position determining unit processes information from the first and second detector channels in combination, and determines a position of a positioning mark on a first object relative to a reference position on a second object, based on the combined information.
Abstract:
PROBLEM TO BE SOLVED: To provide a positioning system for a lithographic projector in which accuracy of alignment and/or hardness is improved. SOLUTION: The positioning system for a lithographic apparatus has a positioning radiation source 1, a detection system that has a first detector channel and a second detector channel, and a position determining unit in communication with the detection system. The position determining unit processes information from the first and second detector channels in combination, to determine a position of a positioning mark on a first object relative to a reference position on a second object based on the combined information. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an alignment system for a lithography projecting device, with the accuracy of positioning and/or robust properties improved. SOLUTION: An alignment system for a lithographic apparatus has a source of alignment radiation, a detection system that has a first detector channel and a second detector channel, and a position determining unit that communicates with the detection system. The position-determining unit processes information from the first and second detector channels in combination and determines the position of an alignment mark on a first object relative to a reference position on a second object, based on the combined information. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an alignment system for lithographic projection equipment in which the accuracy and/or robust property of alignment are improved. SOLUTION: The alignment system of the lithographic equipment includes an aligning radiation source 1, a detection system having a first detector channel and a second detector channel, and an alignment unit communicated with the detection system. The alignment unit determines the position of an alignment mark on a first object for a reference position on a second object based on a combined information that is combined and processed the information from the first and second detection channels. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of determining a position of an object and a lithographic projection apparatus. SOLUTION: A method according to an embodiment of the present invention relates to determining at least one parameter of a model providing information on a position of an object. The object has a plurality of alignment marks clarifying a determined position. The method includes determining a plurality of positional parameters of each alignment mark. The positional parameters are weighted by a weighting factor and measured, and based on the plurality of positional parameters thus obtained, at least one parameter of the model of the object is determined. A numeric value of each weighting factor is determined with at least one parameter of the model. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
Die Erfindung betrifft ein Verfahren zum Optimieren eines Schutzlagensystems (59) für ein EUV-Strahlung (6) reflektierendes Mehrlagensystem (51) eines optischen Elements (50), umfassend die Schritte: Auswählen eines Materials für eine oberste Lage (57) des Schutzlagensystems (59) aus einer Gruppe von chemischen Verbindungen umfassend: Oxide, Karbide, Nitride, Silikate und Boride, wobei das Auswählen des Materials für die oberste Lage (57) in Abhängigkeit von einer Bildungsenthalpie der jeweiligen chemischen Verbindung erfolgt. Die Erfindung betrifft auch ein optisches Element (50), umfassend: ein EUV-Strahlung (6) reflektierendes Mehrlagensystem (51), sowie ein Schutzlagensystem (59) mit einer obersten Lage (57) aus einem Material, welches ausgewählt ist aus einer Gruppe von chemischen Verbindungen umfassend: Oxide, Karbide, Nitride, Silikate und Boride, wobei das Schutzlagensystem (59) entweder aus der obersten Lage (57) mit einer Dicke (d) zwischen 5 nm und 15 nm besteht oder das Schutzlagensystem (59) mindestens eine weitere Lage (58) unter der obersten Lage (57) aufweist, deren Dicke (d2) größer ist als die Dicke (d1) der obersten Lage (57).
Abstract:
Um den negativen Einfluss von metallischer Kontamination innerhalb einer EUV-Lithographievorrichtung auf die Reflektivität zu verringern, wird ein reflektives optisches Element (50) für den extremen ultravioletten und weichen Röntgenwellenlängenbereich mit einer reflektiven Fläche (59) mit oberster Lage (56) vorgeschlagen, bei dem die oberste Lage (56) eine oder mehrere organische Silizium-Verbindungen mit Kohlenstoff-Silizium- und/oder Silizium-Sauerstoff-Bindung aufweist.
Abstract:
An alignment system for a lithographic apparatus has a source of alignment radiation, a detection system that has a first detector channel and a second detector channel, and a position determining unit in communication with the detection system. The position determining unit processes information from the first and second detector channels in combination to determine a position of an alignment mark on a first object relative to a reference position on a second object based on the combined information.
Abstract:
Marker structure on a substrate for optical alignment of said substrate, said marker structure comprising a plurality of first structural elements and a plurality of second structural elements, in use said marker structure allowing said optical alignment based upon providing at least one light beam directed on said marker structure, - detecting light received from said marker structure at a sensor, - determining alignment information from said detected light, said alignment information comprising information relating a position of said substrate to said sensor.