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    Marker for aligning nontransparent gate layers, method for manufacturing such marker, and use of such marker in lithographic apparatus
    4.
    发明专利
    Marker for aligning nontransparent gate layers, method for manufacturing such marker, and use of such marker in lithographic apparatus 有权
    用于标记非透明栅层的标记，制造这种标记的方法，以及这些标记在光刻设备中的使用

    公开(公告)号：JP2009076936A

    公开(公告)日：2009-04-09

    申请号：JP2008317622

    申请日：2008-12-12

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAYSINGH ,  MEGENS HENRY

    IPC: H01L21/027 ,  G03F9/00

    CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a marker structure including line elements and trench elements that are arranged sequentially and repeatedly. SOLUTION: The method includes a step of filling trench elements with a silicon dioxide to level the marker structure. A sacrificial oxide layer is grown on the surface of a semiconductor. A first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a suface portion of the marker structure different from the first subset. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种制造包括依次重复布置的线元件和沟槽元件的标记结构的方法。 解决方案：该方法包括用二氧化硅填充沟槽元件以对标记结构进行平坦化的步骤。 在半导体的表面上生长牺牲氧化物层。 线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。 将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级 标记结构的表面部分的水平不同于第一子集。 版权所有（C）2009，JPO＆INPIT

    Marker for alignment of opaque gate layer, method for manufacturing same, and use of same in lithography apparatus
    9.
    发明专利
    Marker for alignment of opaque gate layer, method for manufacturing same, and use of same in lithography apparatus 有权
    OPAQUE GATE层对准标记，制造方法及其在LITHOGRAPHY设备中的应用

    公开(公告)号：JP2006019738A

    公开(公告)日：2006-01-19

    申请号：JP2005189783

    申请日：2005-06-29

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： FRANCISCUS VAN HAREN RICHARD J ,  LALBAHADOERSING SANJAYSINGH ,  MEGENS HENRY

    IPC: H01L21/027 ,  G03F9/00 ,  H01L21/02 ,  H01L29/78

    CPC classification number: H01L23/544 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a marker structure including line elements and trench elements arranged in order repeatedly. SOLUTION: The method includes a step for filling the trench element with silicon dioxide and flattening the marker structure. A sacrifice oxide layer is caused to grow on the surface of a semiconductor, a first subset of line elements is exposed to ion injection beams including dopant seeds, the first subset it doped, and its etching rate is varied. The dopant seed is activated by annealing the substrate, the sacrifice oxide layer is removed by etching the substrate surface, the first subset is set to the height of a first level, and a topology is formed such that the first subset has the first level different from a second level of the marker structure surface part different from the first subset. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种制造标记结构的方法，该标记结构包括重复排列的线元件和沟槽元件。 解决方案：该方法包括用二氧化硅填充沟槽元件并使标记结构变平的步骤。 导致牺牲氧化物层在半导体的表面上生长，线元件的第一子集暴露于包括掺杂剂种子的离子注入束，其掺杂的第一子集，并且其蚀刻速率是变化的。 通过退火衬底来激活掺杂剂种子，通过蚀刻衬底表面去除牺牲氧化物层，将第一子集设置为第一层的高度，形成拓扑，使得第一子集具有第一层不同 来自与第一子集不同的标记结构表面部分的第二级。 版权所有（C）2006，JPO＆NCIPI

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