公开(公告)号：NL2005992A

公开(公告)日：2011-09-23

申请号：NL2005992

申请日：2011-01-12

Applicant: ASML NETHERLANDS BV

Inventor： WUISTER SANDER ,  BANINE VADIM ,  BOEF ARIE ,  KRUIJT-STEGEMAN YVONNE ,  RAKHIMOVA TATYANA ,  LOPAEV DMITRIY ,  GLUSHKOV DENNIS ,  YAKUNIN ANDREI ,  KOOLE ROELOF

IPC: G03F7/00

Abstract: An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.