Abstract:
PROBLEM TO BE SOLVED: To provide an imprint lithography apparatus that can suppress excessive use of gas. SOLUTION: The apparatus includes: an imprint template arrangement used for imprinting a pattern on a substrate 22 provided with a predetermined amount of imprintable medium 24; a substrate holder 20 configured to hold the substrate 22; and a chamber 40 having an inlet 42 to allow gas to flow into the chamber 40 and an outlet 44 to allow gas to flow out of the chamber 40, wherein the chamber 40 in use contains a gaseous atmosphere. The inlet 42 and the outlet 44 of the chamber 40 are connected to other constituent elements of a gas circulation system. The constituent elements include a gas circulation driver 48 configured to circulate gas in the gas circulation system and/or a gas purification unit 50 configured to purify the gas as it circulates in the gas circulation system. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an inspection method for detecting a contaminant particle in an item such as an EUV lithography reticle.SOLUTION: An inspection method comprises: coating fluorescent dye material on an item; illuminating the item by using radiation in the wavelength suitable for exciting the fluorescent dye material; monitoring the item about the second radiation emission by the fluorescent dye in the wavelength different from the first radiation; generating a signal to show contamination when the second radiation is detected. In one example, such a means as low affinity coating is coated on a reticle to reduce affinity to the dye molecule while the dye molecule is coupled to a contaminant particle by physical or chemical absorption. The dye can be selected to have fluorescent behavior which can be improved by hydrophobicity and hydrophilicity, and the contaminant surface is processed accordingly by a buffer coating.
Abstract:
PROBLEM TO BE SOLVED: To provide imprint lithography for achieving lower levels of the defects caused by a void. SOLUTION: The imprint lithography method includes a step of bringing a patterned surface into contact with an imprintable liquid medium for a filling period. Light, such as scattered or reflected, emitted from an interface between the medium and the patterned surface is collected and measured during the filling period to obtain data concerning one or more voids at the interface, and an end time for the filling period is derived from a relationship between the data and time. The method may allow subsequent process steps to be performed further rapidly to reduce risk of defects arising from remnants of unfilled voids. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an imprint lithography method and an apparatus capable of eliminating or relaxing the problem of unevenness in an imprint template. SOLUTION: The imprint lithography method includes a step of providing a first amount 60 of an imprintable medium having a first etching rate when solidified on a first area of a substrate and a step of providing a second amount 62 of an imprintable medium having a second etching rate different from the first etching rate when solidified on a second area different from the first area on the substrate. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To rapidly separate a surface of an imprint template from a patterned layer on a substrate formed by imprint lithography. SOLUTION: This imprint lithography method for forming a patterned layer from a UV-curable liquid medium on a substrate includes steps of: sticking together a patterned surface and the UV-curable medium for a filling period A; illuminating the UV-curable medium with UV-radiation for an illumination period B; holding the patterned surface and the UV-curable liquid medium together for a holding period C such that the UV-curable medium forms a self-supporting layer; and separating the patterned surface from the patterned layer at the end 24 of the holding period. The start time 22 of the illumination period is earlier than the end time 21 of the filling period by a pre-cure period E. Also, a method is disclosed where the end time 23 of the illumination period is earlier than the end time 24 of the holding period. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.
Abstract:
A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer comprising first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition comprising a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.
Abstract:
A BCP having first block of first monomer and second block of second monomer, adapted to undergo a transition from disordered state to ordered state at a temperature less than T0D, further including a bridging moiety having a functional group to provide hydrogen bonding between bridging moieties of adjacent first and second BCP molecules when in the ordered state and at a temperature in excess of a glass transition temperature Tg for the BCP. Composition including BCP comprising first block of first monomer and second block of second monomer, and a crosslinking compound having first and second terminal groups joined by a central moiety and arranged to crosslink second blocks of adjacent first and second BCP molecules by providing non-covalent bonding between the terminal groups and a functional group of the second monomer of the second blocks when the BCP is in the ordered state.
Abstract:
A method of forming a self-assembled block polymer layer, oriented to form an ordered array of alternating domains, is disclosed. The method involves providing a layer of the self-assemblable block copolymer on the substrate and depositing a first surfactant onto the external surface of the layer prior to inducing self-assembly of the layer to form the ordered array of domains. The first surfactant has a hydrophobic tail and a hydrophilic head group and acts to reduce the interfacial energy at the external surface of the block copolymer layer in order to promote formation of assembly of the block copolymer polymer into an ordered array having the alternating domains.