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    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS
    2.
    发明申请
    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS 审中-公开
    使用自组装聚合物的光刻

    公开(公告)号：WO2012031818A2

    公开(公告)日：2012-03-15

    申请号：PCT/EP2011062554

    申请日：2011-07-21

    Applicant: ASML NETHERLANDS BV ,  KOOLE ROELOF ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  PEETERS EMIEL

    Inventor： KOOLE ROELOF ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  PEETERS EMIEL

    IPC: B81C1/00

    CPC classification number: B44C1/227 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0002 ,  H01L21/0337

    Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

    Abstract translation: 衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。 平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。 然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。 然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。 封盖允许除去第二区域，例如，即使当第一和第二区域之间的耐蚀刻性差异小时，也不会对剩余的第一区域造成横向特征宽度的过度损失。

    METHODS OF PROVIDING PATTERNED CHEMICAL EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY
    3.
    发明申请
    METHODS OF PROVIDING PATTERNED CHEMICAL EPITAXY TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY 审中-公开
    提供用于自组装嵌段共聚物的图案化学外延模板用于器件平台的方法

    公开(公告)号：WO2013127608A3

    公开(公告)日：2013-10-24

    申请号：PCT/EP2013052306

    申请日：2013-02-06

    Applicant: ASML NETHERLANDS BV

    Inventor： PEETERS EMIEL ,  KETELAARS WILHELMUS ,  WUISTER SANDER ,  KOOLE ROELOF ,  VAN HEESCH CHRIS ,  BRIZARD AURELIE ,  BOOTS HENRI ,  NGUYEN THANH ,  YILDIRIM OKTAY

    IPC: G03F7/00

    CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

    Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer comprising first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition comprising a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

    Abstract translation: 一种形成图案化的化学外延模板的方法，用于在基材的表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供曝光和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。

    SELF-ASSEMBLABLE POLYMER AND METHOD FOR USE IN LITHOGRAPHY
    4.
    发明申请
    SELF-ASSEMBLABLE POLYMER AND METHOD FOR USE IN LITHOGRAPHY 审中-公开
    自组装聚合物和方法用于光刻

    公开(公告)号：WO2012175342A3

    公开(公告)日：2013-02-28

    申请号：PCT/EP2012060783

    申请日：2012-06-07

    Applicant: ASML NETHERLANDS BV ,  BRIZARD AURELIE ,  KETELAARS WILHELMUS ,  WUISTER SANDER ,  KOOLE ROELOF ,  PEETERS EMIEL ,  VAN HEESCH CHRIS ,  BOOTS HENRI ,  NGUYEN THANH

    Inventor： BRIZARD AURELIE ,  KETELAARS WILHELMUS ,  WUISTER SANDER ,  KOOLE ROELOF ,  PEETERS EMIEL ,  VAN HEESCH CHRIS ,  BOOTS HENRI ,  NGUYEN THANH

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  C08F299/02 ,  C08F299/04 ,  H01L51/0043

    Abstract: A BCP having first block of first monomer and second block of second monomer, adapted to undergo a transition from disordered state to ordered state at a temperature less than T0D, further including a bridging moiety having a functional group to provide hydrogen bonding between bridging moieties of adjacent first and second BCP molecules when in the ordered state and at a temperature in excess of a glass transition temperature Tg for the BCP. Composition including BCP comprising first block of first monomer and second block of second monomer, and a crosslinking compound having first and second terminal groups joined by a central moiety and arranged to crosslink second blocks of adjacent first and second BCP molecules by providing non-covalent bonding between the terminal groups and a functional group of the second monomer of the second blocks when the BCP is in the ordered state.

    Abstract translation: BCP具有第一单体的第一嵌段和第二单体的第二嵌段，适于在低于T0D的温度下经历从无序状态转化为有序状态，还包括具有官能团的桥连部分以在桥连部分之间提供氢键 相邻的第一和第二BCP分子处于有序状态并且在超过BCP的玻璃化转变温度Tg的温度下。 包含BCP的组合物包含第一单体的第一嵌段和第二单体的第二嵌段，以及具有通过中心部分连接的第一和第二端基的交联化合物，并且被布置成通过提供非共价键来交联相邻的第一和第二BCP分子的第二嵌段 当BCP处于有序状态时，端子组与第二块的第二单体的官能团之间。

    IMPRINT LITHOGRAPHY
    6.
    发明申请
    IMPRINT LITHOGRAPHY 审中-公开
    印刷光刻

    公开(公告)号：WO2011107302A3

    公开(公告)日：2011-12-15

    申请号：PCT/EP2011050246

    申请日：2011-01-11

    Applicant: ASML NETHERLANDS BV ,  KRUIJT-STEGEMAN YVONNE ,  DEN BOEF ARIE ,  JEUNINK ANDRE ,  WUISTER SANDER

    Inventor： KRUIJT-STEGEMAN YVONNE ,  DEN BOEF ARIE ,  JEUNINK ANDRE ,  WUISTER SANDER

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7042

    Abstract: A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.

    Abstract translation: 公开了一种确定压印光刻设备中的压印模板的位置的方法。 在一个实施例中，该方法包括通过在该区域上扫描对准辐射束来照射其中预期将找到对准标记的压印模板的区域，检测从该区域反射或透射的辐射的强度，以及识别对准标记 通过分析检测到的强度来标记。

    IMPRINT LITHOGRAPHY APPARATUS AND METHOD
    7.
    发明申请
    IMPRINT LITHOGRAPHY APPARATUS AND METHOD 审中-公开
    印刷光刻设备和方法

    公开(公告)号：WO2010063504A2

    公开(公告)日：2010-06-10

    申请号：PCT/EP2009062963

    申请日：2009-10-06

    Applicant: ASML NETHERLANDS BV ,  KONINK PHILIPS ELECTRONICS B V ,  VAN DER TEMPEL LEENDERT ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  KRUIJT-STEGEMAN YVONNE ,  LAMMERS JEROEN ,  MUTSAERS CORNELIS

    Inventor： VAN DER TEMPEL LEENDERT ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  KRUIJT-STEGEMAN YVONNE ,  LAMMERS JEROEN ,  MUTSAERS CORNELIS

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    Abstract: A method of imprint lithography involves the use of a void space in the substrate or imprint template. A gas pocket trapped between an imprint template and an imprintable, flowable medium on the substrate may lead to an irregularity once the imprintable medium has set. A void space allows the gas pocket to dissipate by flow or diffusion of gas into the void space, typically prior to setting the imprintable medium. A layer of solid porous medium as part of the imprint template, for instance as a layer forming or neighbouring the patterning surface of the template, may provide the void space. The void space of the porous layer acts as a void space into which the trapped gas can flow or diffuse. The substrate to be patterned may include a porous layer for the same purpose. A suitable solid porous medium includes a nanoporous silica.

    Abstract translation: 压印光刻的方法涉及在基板或压印模板中使用空隙空间。 一旦可压印介质凝固，被俘获在压印模板和衬底上的可压印的可流动介质之间的气袋可能导致不规则。 通常在设置可压印介质之前，空隙空间允许气穴通过气流或空气扩散进入空隙空间而消散。 作为压印模板的一部分的一层固体多孔介质，例如作为形成或邻近模板的图案化表面的层，可以提供空隙空间。 多孔层的空隙空间充当被捕获的气体可以流入或扩散到其中的空隙空间。 出于相同的目的，待图案化的衬底可以包括多孔层。 合适的固体多孔介质包括纳米多孔二氧化硅。

    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS.
    10.
    发明专利
    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS. 未知

    公开(公告)号：NL2007161A

    公开(公告)日：2012-03-12

    申请号：NL2007161

    申请日：2011-07-21

    Applicant: ASML NETHERLANDS BV

    Inventor： KOOLE ROELOF ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  PEETERS EMIEL

    IPC: G03F7/20

    Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

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