公开(公告)号：JP2005142576A

公开(公告)日：2005-06-02

申请号：JP2004329761

申请日：2004-10-15

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： KRUIJSWIJK STEFAN GEERTE ,  RARUTO WILLEM DE LIEUW ,  LUEHRMANN PAUL FRANK ,  TEL WIM TJIBBO ,  VAN WIJNEN PAUL JACQUES ,  TROOST KARS ZEGER

IPC: H01L21/027 ,  G03B27/52 ,  G03F7/20

CPC classification number: G03F7/70991

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic treatment cell capable of reworking a defective wafer more efficiently and / or more quickly, and further provide a lithographic apparatus, a track, and a device manufacturing method.
SOLUTION: A lot is loaded via an input / output port I / O1, and next a substrate is applied by a spin applying machine SC, and is exposed by a lithographic apparatus LA, and next is developed by a developing machine DE. Thereafter, the substrate which is already developed is measured or inspected by an integrated measurement device IM, and an acceptable substrate is sent to an input / output port I / O2, and the lot which is already treated is assembled before the lot is transported to another process. The substrate which is rejected by an inspection is, for example, branched to a rework station RW when one or more defects are detected.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够更有效和/或更快速地对缺陷晶片进行再加工的光刻处理单元，并进一步提供光刻设备，轨道和器件制造方法。 解决方案：大量通过输入/输出端口I / O1加载，接下来通过旋涂机SC施加衬底，并由光刻设备LA曝光，接下来由显影机DE 。 此后，通过集成的测量装置IM测量或检查已经显影的基板，并且将可接受的基板发送到输入/输出端口I / O2，并且已经处理的批次在批次被运送到之前被组装 另一个过程。 当检测到一个或多个缺陷时，通过检查被拒绝的基板例如分支到返工台RW。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2009204621A

公开(公告)日：2009-09-10

申请号：JP2009134465

申请日：2009-06-03

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： DEN BOEF ARIE JEFFREY ,  BLEEKER ARNO JAN ,  VAN DOMMELEN YOURI JOHANNES LA ,  DUSA MIRCEA ,  KIERS ANTOINE GASTON MARIE ,  LUEHRMANN PAUL FRANK ,  PELLEMANS HENRICUS PETRUS MARI ,  VAN DER SOHAAR MAURITS ,  GROUWSTRA CEDRIC DESIRE ,  VAN KRAAIJ MARKUS GERARDUS MAR

IPC: G01N21/956 ,  G01B11/02 ,  G03F7/20 ,  H01L21/027

CPC classification number: G01N21/8806 ,  G03F7/70341 ,  G03F7/70633 ,  G03F7/7065 ,  G03F9/7034

Abstract: PROBLEM TO BE SOLVED: To provide a method for measuring overlay and grating shape parameters using a lithographic technology and measurement of an angle-resolved spectrum in a pupil plane of a high numerical aperture lens during the manufacture of a device. SOLUTION: An apparatus and a method are provided for determining a property of a substrate by measuring, in the pupil plane of the high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在制造装置期间使用光刻技术测量覆盖层和光栅形状参数的方法以及高数值孔径透镜的光瞳平面中的角度分辨光谱的测量。 解决方案：提供了一种用于通过在高数值孔径透镜的光瞳平面中测量作为辐射从基板反射的结果的角度分辨光谱来确定基板的性质的装置和方法。 该属性可以是角度和波长相关的，并且可以包括TM-和TE-偏振光的强度及其相对相位差。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006060214A

公开(公告)日：2006-03-02

申请号：JP2005235188

申请日：2005-08-15

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： DEN BOEF ARIE JEFFREY ,  BLEEKER ARNO JAN ,  VAN DOMMELEN YOURI JOHANNES LA ,  DUSA MIRCEA ,  KIERS ANTOINE GASTON MARIE ,  LUEHRMANN PAUL FRANK ,  PELLEMANS HENRICUS PETRUS MARI ,  VAN DER SOHAAR MAURITS ,  GROUWSTRA CEDRIC DESIRE ,  VAN KRAAIJ MARKUS GERARDUS MAR

IPC: H01L21/027 ,  G01N21/956 ,  G03F7/20

CPC classification number: G01N21/8806 ,  G03F7/70341 ,  G03F7/70633 ,  G03F7/7065 ,  G03F9/7034

Abstract: PROBLEM TO BE SOLVED: To provide a method of measuring overlay and trellis-shape parameter using lithography technology and angle-resolved spectrum measurement in a pupil plane of a high numerical aperture of lens during a manufacture of a device. SOLUTION: Apparatus and the method which determine a property of a substrate by measuring an angle-resolved spectrum as a result of radiation being reflected by the substrate in the pupil plane of a high numerical aperture of lens. The property is dependent on angle and wavelength, and includes the intensity of TM- and TE-polarized light, and their relative phase difference. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种使用光刻技术测量覆盖层和网格形状参数的方法，以及在器件制造期间在高数值孔径的光瞳平面中的角度分辨光谱测量。 解决方案：通过测量作为辐射的结果的角度分辨的光谱来确定基板的性质的装置和方法，所述角度分辨光谱由透镜的高数值孔径的光瞳平面中的基板反射。 该属性取决于角度和波长，并且包括TM和TE偏振光的强度及其相对相位差。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004279405A

公开(公告)日：2004-10-07

申请号：JP2003366656

申请日：2003-09-19

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： DEN BOEF ARIE JEFFREY ,  BORNEBROEK FRANK ,  CRAMER HUGO AUGUSTINUS JOSEPH ,  DUSA MIRCEA ,  VAN HAREN RICHARD JOHANNES FRA ,  KIERS ANTOINE GASTON MARIE ,  KREUZER JUSTIN LLOYD ,  VAN DER SCHAAR MAURITS ,  VAN WIJNEN PAUL JACQUES ,  MOS EVERHARDUS CORNELIS ,  JAGER PIETER WILLEM HERMAN ,  VAN DER LAAN HANS ,  LUEHRMANN PAUL FRANK

IPC: G01B11/00 ,  G01B11/02 ,  G01B21/00 ,  G02B5/18 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/68 ,  H01L23/52 ,  H01S3/00

CPC classification number: G03F9/7084 ,  G03F9/7046 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/7088 ,  G03F9/7092

Abstract: PROBLEM TO BE SOLVED: To provide a device inspection method which has solved the conventional defects. SOLUTION: In the method, an asymmetrical marker on a device to be inspected is included; the form of the asymmetrical marker depends on the parameters to be inspected; a first measurement value of the position of the marker is obtained by directing light at the marker and detecting the diffracted light of a specified wavelength or of a diffracted angle; a secondary measured value of the position of the marker which is obtained by detecting the diffracted light of a different wavelength or at a different diffracted angle; a comparison between the first and second measurement positions which is performed so as to determine a shift indicating the degree of asymmetry of the marker. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：SG125922A1

公开(公告)日：2006-10-30

申请号：SG200305607

申请日：2003-09-19

Applicant: ASML NETHERLANDS BV

Inventor： BOEF DEN ARIE JEFFREY ,  BORNEBROEK FRANK ,  CRAMER HUGO AUGUSTINUS JOSEPH ,  DUSA MIRCEA ,  HAREN VAN RICHARD JOHANNES FRA ,  KIERS ANTOINE GASTON MARIE ,  KREUZER JUSTIN LLOYD ,  SCHAAR VAN DER MAURITS ,  WIJNEN VAN PAUL JACQUES ,  MOS EVERHARDUS CORNELIS ,  JAGER PIETER WILLEM HERMAN ,  LAAN VAN DER HANS ,  LUEHRMANN PAUL FRANK

IPC: G01B11/00 ,  G01B11/02 ,  G01B21/00 ,  G02B5/18 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/68 ,  H01L23/52 ,  H01S3/00

Abstract: A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.

公开(公告)号：DE602005023946D1

公开(公告)日：2010-11-18

申请号：DE602005023946

申请日：2005-08-11

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE JEFFREY ,  BLEEKER ARNO JAN ,  VAN DOMMELEN YOURI JOHANNES LAURENTIUS MARIA ,  DUSA MIRCEA ,  KIERS ANTOINE GASTON MARIE ,  LUEHRMANN PAUL FRANK ,  PELLEMANS HENRICUS PETRUS MARIA ,  VAN DER SOHAAR MAURITS ,  GROUWSTRA CEDRIC DESIRE ,  VAN KRAAIJ MARKUS GERARDUS MARTINUS

IPC: G03F7/20 ,  G03F9/00

公开(公告)号：SG10201500569RA

公开(公告)日：2015-03-30

申请号：SG10201500569R

申请日：2005-08-12

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE JEFFREY ,  BLEEKER ARNO JAN ,  VAN DOMMELEN YOURI JOHANNES LAURENTIUS MARIA ,  DUSA MIRCEA ,  KIERS ANTOINE GASTON MARIE ,  LUEHRMANN PAUL FRANK ,  PELLEMANS HENRICUS PETRUS MARIA ,  VAN DER SCHAAR MAURITS ,  GROUWSTRA CEDRIC DESIRE ,  VAN KRAAIJ MARKUS GERARDUS MARTINUS

IPC: G01B11/00 ,  G01N21/21 ,  G03F7/20 ,  G03F9/00

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.

公开(公告)号：SG120263A1

公开(公告)日：2006-03-28

申请号：SG200505153

申请日：2005-08-12

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE JEFFREY ,  BLEEKER ARNO JAN ,  VAN DOMMELEN YOURI JOHANNES LA ,  DUSA MIRCEA ,  KIERS ANTOINE GASTON MARIE ,  LUEHRMANN PAUL FRANK ,  PELLEMAN HENRICUS PETRUS MARIA ,  VAN DER SCHAAR MAURITS ,  GROUWSTRA CEDRIC DESIRE ,  VAN KRAAIJ MARKUS GERARDUS MAR

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.

公开(公告)号：SG173420A1

公开(公告)日：2011-08-29

申请号：SG2011053931

申请日：2005-08-12

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE JEFFREY ,  BLEEKER ARNO JAN ,  VAN DOMMELEN YOURI JOHANNES LAURENTIUS MARIA ,  DUSA MIRCEA ,  KIERS ANTOINE GASTON MARIE ,  LUEHRMANN PAUL FRANK ,  PELLEMANS HENRICUS PETRUS MARIA ,  VAN DER SCHAAR MAURITS ,  GROUWSTRA CEDRIC DESIRE ,  VAN KRAAIJ MARKUS GERARDUS MARTINUS

Abstract: METHOD AND APPARATUS FOR ANGULAR-RESOLVED SPECTROSCOPIC LITHOGRAPHY CHARACTERIZATIONAn apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensify of TM- and TB-polarized light and their relative phase difference.Figure 3

公开(公告)号：SG139763A1

公开(公告)日：2008-02-29

申请号：SG2008007890

申请日：2005-08-12

Applicant: ASML NETHERLANDS BV

Inventor： DEN BOEF ARIE JEFFREY ,  BLEEKER ARNO JAN ,  VAN DOMMELEN YOURI JOHANNES LA ,  DUSA MIRCEA ,  KIERS ANTOINE GASTON MARIE ,  LUEHRMANN PAUL FRANK ,  PELLEMANS HENRICUS PETRUS MARI ,  VAN DER SCHAAR MAURITS ,  GROUWSTRA CEDRIC DESIRE ,  VAN KRAAIJ MARKUS GERARDUS MAR

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.