Abstract:
PROBLEM TO BE SOLVED: To disclose an immersion lithographic apparatus that includes a fluid supply system for supplying a fluid. SOLUTION: The fluid supply system has a chamber with a plurality of inlet holes formed in a first sidewall and a plurality of outlet holes formed in a second sidewall, wherein the first sidewall faces the second sidewall, and the inlet holes allows fluid entering the chamber to induce in a direction towards areas of the second sidewall between the plurality of outlet holes. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and an operation method which reduce defects caused by using an immersion liquid in an immersion liquid lithographic apparatus. SOLUTION: A lithographic apparatus comprises: a support configured to support a patterning device, where the patterning device can impart a radiation beam with a pattern in its cross-section, to form a patterned radiation beam; a substrate table configured to hold a substrate; a liquid supply system configured to provide a liquid to a local area of a top surface of a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate through the liquid; and a controller adapted to coordinate movement of the substrate table and the support during imaging of a line of dies across the substrate and this is accomplished by movement of the line of dies under the projection system backwards and/or forwards only in a direction substantially parallel to a first direction, where the first direction is in a plane substantially parallel to the top surface. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for measuring overlay and grating shape parameters using a lithographic technology and measurement of an angle-resolved spectrum in a pupil plane of a high numerical aperture lens during the manufacture of a device. SOLUTION: An apparatus and a method are provided for determining a property of a substrate by measuring, in the pupil plane of the high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To reduce the presence of particles in an immersion system, and/or at least obtain information indicative of a defect so that it may be better understood with the aim of reducing its occurrence or number. SOLUTION: A method is disclosed that obtains information related to a defect 110 present during irradiation of a substrate W coated with a layer of radiation sensitive material using immersion lithography. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material. The method further includes developing the radiation sensitive material and obtaining information at least indicative of the topography of radiation sensitive material remaining on the substrate after the radiation sensitive material has been developed in order to obtain information related to the defect. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To reduce defects caused by using an immersion liquid in an immersion liquid lithographic apparatus.SOLUTION: The lithographic apparatus includes: a support configured to support a patterning device, where the patterning device can impart a radiation beam with a pattern in its cross-section, to form a patterned radiation beam; a substrate table configured to hold a substrate; a liquid supply system configured to provide a liquid to a local area of a top surface of a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate through the liquid. The lithographic apparatus is configured to coordinate movement of the substrate table and the support during imaging of a line of dies across the substrate and this is accomplished by movement of the line of dies under the projection system backwards and/or forwards only in a direction substantially parallel to a first direction, where the first direction is in a plane substantially parallel to the top surface.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for reducing the risk of contamination of immersion liquid and components of the apparatus. SOLUTION: A method of inspecting a substrate with first and second layers thereon is disclosed. This method includes directing a beam of electromagnetic radiation at an acute angle towards an edge of the layers, detecting scattered and/or reflected electromagnetic radiation, and establishing, from the results of the detecting, whether an edge of the second layer overlaps an edge of the first layer. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of measuring overlay and trellis-shape parameter using lithography technology and angle-resolved spectrum measurement in a pupil plane of a high numerical aperture of lens during a manufacture of a device. SOLUTION: Apparatus and the method which determine a property of a substrate by measuring an angle-resolved spectrum as a result of radiation being reflected by the substrate in the pupil plane of a high numerical aperture of lens. The property is dependent on angle and wavelength, and includes the intensity of TM- and TE-polarized light, and their relative phase difference. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.
Abstract:
An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.