中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.031 seconds)

    LITHOGRAPHIC PROJECTION APPARATUS, DEVICE MANUFACTURING METHOD AND DEVICE MANUFACTURING THEREBY
    1.
    发明专利
    LITHOGRAPHIC PROJECTION APPARATUS, DEVICE MANUFACTURING METHOD AND DEVICE MANUFACTURING THEREBY 审中-公开

    公开(公告)号：JP2003234287A

    公开(公告)日：2003-08-22

    申请号：JP2002369012

    申请日：2002-11-15

    Applicant: ASML NETHERLANDS BV

    Inventor： VAN SCHAIK WILLEM ,  MERTENS BASTIAAN MATTHIAS ,  MEILING HANS ,  KOSTER NORBERTUS BENEDICTUS

    IPC: G02B17/00 ,  G03F7/20 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide an efficient and effective cleaning method of an optical element used in a lithographic projection apparatus without employing any unstable material. SOLUTION: Purge gas containing a small amount of molecular oxygen is supplied from a gas supplying source 4 into a space 2 receiving the optical element 3 used in a lithographic projection apparatus. The optical element is irradiated with a UV radiation beam from a radiation source LA for mask pattern projection or a radiation source 7 exclusive for purge whereby the beam of radiation decomposes oxygen and produces an oxygen radical which cleans the optical element very effectively. When the partial pressure of the molecular oxygen contained in the purge gas is from 1×10 -4 Pa to 1 Pa, sufficient cleaning can be effected within a short time. According to this method, an unstable material such as ozone or the like is not used whereby an excessive work such as the preparation of the purge gas is not required and the optical element can be cleaned simultaneously with the exposure of the substrate, thereby not requesting the optical element removed from the lithographic apparatus. COPYRIGHT: (C)2003,JPO

    Transfer of lithography apparatus and patterning device
    2.
    发明专利
    Transfer of lithography apparatus and patterning device 有权
    转印装置和图案装置的传送

    公开(公告)号：JP2006041499A

    公开(公告)日：2006-02-09

    申请号：JP2005183273

    申请日：2005-06-23

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： HAM ERIK LEONARDUS ,  HEERENS GERT-JAN ,  LANSBERGEN ROBERT GABRIEL M ,  MEIJER ELLARD A ,  MEIJER HENDRICUS JOHANNES MARI ,  MEILING HANS ,  MERTENS BASTIAAN MATTHIAS ,  MOORS JOHANNES HUBERTUS JOSEPH

    IPC: H01L21/027 ,  B65G49/00 ,  G03B27/52 ,  G03B27/62 ,  G03F7/20 ,  H01L21/677

    CPC classification number: G03B27/52 ,  G03F7/70741

    Abstract: PROBLEM TO BE SOLVED: To provide a box which is capable of protecting a lithography patterning device against external contaminants and making its throughput optimal.
    SOLUTION: The transfer box 2 is equipped with an internal space 10 provided with a housing position at which the patterning device is housed and a container 8 provided with an opening used for transferring the patterning device. The internal space 10 is pressurized before the patterning device is transferred from the internal space 10 to a lithography apparatus. The box is equipped with a closure which closes the opening and/or a channel system 18 which discharges gas from the internal space 10 of the box to / and/or supplies the gas from / to the internal space of the box, and the lithography apparatus which is so constituted as to collaborate with the box device is included.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种能够保护光刻图案形成装置免受外部污染物并使其吞吐量最优化的盒子。 解决方案：转印盒2配备有内部空间10，内部空间10设置有容纳图案形成装置的容纳位置，容器8具有用于转印图案形成装置的开口。 在图案形成装置从内部空间10传送到光刻装置之前，内部空间10被加压。 该箱子装有封闭开口和/或通道系统18，该通道系统18将来自箱体的内部空间10的气体从盒子的内部空间排出和/或从气体的内部空间供应气体，并且光刻 包括与盒装置协作的装置。 版权所有（C）2006，JPO＆NCIPI

    Lithography device and method therefor
    5.
    发明专利
    Lithography device and method therefor 审中-公开
    LITHOGRAPHY设备及其方法

    公开(公告)号：JP2007194609A

    公开(公告)日：2007-08-02

    申请号：JP2006342137

    申请日：2006-12-20

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： VAN MIERLO HUBERT ADRIANN ,  HEERENS GERT-JAN ,  MEILING HANS ,  THEODORUS MARIA BASTEIN ANTONI ,  VAN DER DONCK JACQUES COR JOHA

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/70925 ,  G01N21/94 ,  G03F7/7085 ,  G03F7/70866 ,  G03F7/70916

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography device for detecting and eliminating contamination in a patterning device, and to provide a method achieved thereby. SOLUTION: This lithography device comprises a patterning device MA for giving a pattern onto the section of a beam of radiation to form a patterned beam of radiation, a washing unit CU positioned to wash the patterning device MA on that place, and/or a detection unit positioned to detect patterning device contamination on the moment. The washing unit is also positioned in a way that fluid is sent to the surface of the patterning device. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于检测和消除图案形成装置中的污染的光刻装置，并提供由此实现的方法。 解决方案：该光刻设备包括图案形成装置MA，用于在辐射束的部分上形成图案以形成图案化的辐射束;定位成在该位置清洗图案形成装置MA的洗涤单元CU和/ 或定位成在该时刻检测图案形成装置污染的检测单元。 洗涤单元也以将流体送到图案形成装置的表面的方式定位。 版权所有（C）2007，JPO＆INPIT

    Lithography device and method
    6.
    发明专利
    Lithography device and method 审中-公开
    LITHOGRAPHY设备和方法

    公开(公告)号：JP2007180549A

    公开(公告)日：2007-07-12

    申请号：JP2006342191

    申请日：2006-12-20

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： HUBERT ADRIAAN VAN MIERLO ,  HEERENS GERT-JAN ,  MEILING HANS ,  THEODORUS MARIA BASTEIN ANTONI ,  VAN DER DONCK JACQUES COR JOHA ,  VAN BRUG HEDSER

    IPC: H01L21/027 ,  G03F1/16

    CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/94 ,  G01N21/956 ,  G01N2021/8822 ,  G01N2021/95676 ,  G03F1/82 ,  G03F1/84 ,  G03F7/7085 ,  G03F7/70916

    Abstract: PROBLEM TO BE SOLVED: To provide a lithography device and a method for detecting contamination of a patterning device and removing contaminants.
    SOLUTION: A beam 11 is polarized by a polarizer 12 before incidence to a patterning device MA. When straightly polarized light with known orientation is incident to a surface obliquely, the reflected light is elliptically polarized. The reflected, elliptically polarized beam 11 passes through a quarter wave plate 13 and an analyzer 14 before detected by a detector 15. From the orientation of the quarter wave plate 13 and the analyzer 14 when light is no longer detected, it is possible to calculate a change in relative phase on the surface of the patterning device MA and also to calculate the width (or thickness) of contamination. A cleaning gas, such as carbon dioxide, is discharged from a nozzle end into the detected contaminants and the contaminants are removed.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种光刻设备和用于检测图案形成装置的污染物和去除污染物的方法。 解决方案：光束11在入射到图案形成装置MA之前被偏振器12极化。 当具有已知取向的直线偏振光倾斜入射到表面时，反射光是椭圆偏振的。 经检测器15检测之前，反射的椭圆偏振光束11通过四分之一波片13和分析仪14。当不再检测到光时，从四分之一波片13和分析仪14的方向上可以计算出 图案形成装置MA的表面上的相对相位发生变化，并且还计算污染物的宽度（或厚度）。 诸如二氧化碳的清洁气体从喷嘴端排出到检测到的污染物中，并且去除污染物。 版权所有（C）2007，JPO＆INPIT

    Method for manufacturing device, device manufactured by the same and mask used in the method
    8.
    发明专利
    Method for manufacturing device, device manufactured by the same and mask used in the method 审中-公开
    制造装置的方法，由其制造的装置和方法中使用的掩模

    公开(公告)号：JP2003059827A

    公开(公告)日：2003-02-28

    申请号：JP2002177248

    申请日：2002-06-18

    Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

    Inventor： VAN DER WERF JAN EVERT ,  LOOPSTRA ERIK ROELOF ,  MEILING HANS ,  MOORS JOHANNES HUBERTUS JOSEPH ,  LEENDERS MARTINUS HENDRIKUS AN

    IPC: G03F1/16 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F7/707 ,  G03F7/70233 ,  G03F7/70258 ,  G03F7/70283 ,  G03F7/703

    Abstract: PROBLEM TO BE SOLVED: To prevent or to alleviate overlay errors or the like caused by a strain, such as deformation or the like of a mark in a lithography apparatus, having a non-telecentric projection system at the article side used in a method for manufacturing a device.
    SOLUTION: The method for manufacturing the device comprises a step of providing a substrate covered with a layer of a radiation-sensitive material, a step of providing a radiation projection beam by using a radiation system, a step of imparting a pattern to a section of the projection beam by using a reflective pattern forming means, and a step of forming an image on the target part of the layer of the radiation sensitive material by projecting the pattern-formed radiation beam, by using the non-telecentric projection system at the article side. The method further comprises the steps of shifting and/or inclining a nominal reflection surface of the pattern forming means, so as to separate from a flat surface of a nominal article of the projection system, and alleviating the strain and/or the overlay error of the projection image.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题：为了防止或减轻由在光刻设备中的标记的变形等的应变引起的重叠误差等，其在用于方法中的物品侧具有非远心投影系统 制造设备。 解决方案：用于制造该器件的方法包括提供覆盖有辐射敏感材料层的衬底的步骤，通过使用辐射系统提供辐射投影束的步骤，将图案赋予 通过使用反射图案形成装置的投影束，以及通过使用非远心投影系统在物品上投射图案形成的辐射束在辐射敏感材料的层的目标部分上形成图像的步骤 侧。 该方法还包括以下步骤：移动和/或倾斜图案形成装置的标称反射表面，从而与投影系统的标称物品的平坦表面分离，并减轻应变和/或重叠误差 投影图像。

    10.
    发明专利
    未知

    公开(公告)号：DE60228806D1

    公开(公告)日：2008-10-23

    申请号：DE60228806

    申请日：2002-11-15

    Applicant: ASML NETHERLANDS BV

    Inventor： VAN SCHAIK WILLEM ,  DUISTERWINKEL ANTONIE ELLERT ,  MERTENS BASTIAAN MATTHIAS ,  MEILING HANS ,  KOSTER NORBERTUS BENEDICTUS

    IPC: G03F7/20 ,  H01L21/027

    Abstract: Cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space will be purged with a purge gas which contains a small amount of the oxygen-containing species in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of the oxygen-containing species into the space. This technique has the advantage that the use of unstable materials such as ozone is avoided.

Patent Agency Ranking