公开(公告)号：JP2003282431A

公开(公告)日：2003-10-03

申请号：JP2003064185

申请日：2003-02-03

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： GIJSBERTSEN JOHANNES GERARDUS ,  DE JAGER PIETER WILLEM HERMAN ,  NIJKERK MICHIEL DAVID

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F9/7053

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus where alignment is easy and reliable, and to provide a device-manufacturing method.
SOLUTION: A lithographic projection apparatus has an alignment sensor comprising an electron beam supply source 10 for supplying an electron beam 12 for impinging on an alignment mark 14 on a substrate W, and a back- scattered electron detector 16 for detecting electrons being back-scattered from the alignment marker 14. The alignment sensor is independent of the projection system and projection radiation, and is an off-axis alignment sensor.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种光刻设备，其中对准容易且可靠，并提供器件制造方法。 解决方案：光刻投影装置具有对准传感器，该对准传感器包括用于提供用于撞击基板W上的对准标记14的电子束12的电子束供给源10和用于检测电子的反向散射电子检测器16 对准传感器与投影系统和投影辐射无关，并且是离轴对准传感器。 版权所有（C）2004，JPO

公开(公告)号：JP2007180551A

公开(公告)日：2007-07-12

申请号：JP2006344963

申请日：2006-12-21

Applicant: Asml Netherlands Bv ,  Carl Zeiss Smt Ag ,  エーエスエムエル ネザーランズ ビー.ブイ. ,  カール・ツァイス・エスエムティー・アーゲー

Inventor： LORENZ VAN DER VELDEN MARC HUB ,  BANINE VADIM YEVGENYEVICH ,  MERTENS BASTIAAN MATTHIAS ,  JOSEPHINA MOORS JOHANNES H ,  WEISS MARKUS ,  WOLSCHRIJN BASTIAAN T ,  NIJKERK MICHIEL DAVID

IPC: H01L21/027

CPC classification number: G03F7/70933 ,  G03F7/70916 ,  G03F7/7095

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which it is unlikely that the lifetime of optical elements is reduced due to etching and sputtering caused by ionization of the background gas.
SOLUTION: An optically activated device configured so as to guide radiation beam or patterned radiation beam M and a support structure 12, configured so as to support optically activated devices M1 to M6 are provided; and further, a gas supplier 14 for supplying a background gas 16 to a system is also provided. The radiation beam or the patterned radiation beam and the background gas react, and a plasma containing a plurality of ions is formed. The support structure comprises an element 20, provided with a material with a small sputter rate, a material with a large sputter threshold energy, or a material with a large ion implantation yield, in order to suppress the sputtering and the generation of sputtering product.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种光刻设备，其中由于背景气体的离子化引起的蚀刻和溅射，光学元件的寿命不太可能降低。 提供了一种被配置为引导辐射束或图案化辐射束M的光学激活装置和被配置为支撑光学激活的装置M1至M6的支撑结构12。 此外，还提供了用于将背景气体16供应到系统的气体供应器14。 辐射束或图案化的辐射束和背景气体反应，并且形成包含多个离子的等离子体。 支撑结构包括具有溅射速率小的材料的元件20，具有大的溅射阈值能量的材料或具有大的离子注入产率的材料，以便抑制溅射和产生溅射产物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：NL1036305A1

公开(公告)日：2009-06-23

申请号：NL1036305

申请日：2008-12-11

Applicant: ASML NETHERLANDS BV

Inventor： KRUIZINGA BORGERT ,  WEHRENS MARTIJN GERARD DOMINIQUE ,  NIJKERK MICHIEL DAVID ,  FEENSTRA KORNELIS FRITS

IPC: G01M11/02 ,  G03F7/20

公开(公告)号：SG106121A1

公开(公告)日：2004-09-30

申请号：SG200300239

申请日：2003-01-30

Applicant: ASML NETHERLANDS BV

Inventor： GIJSBERTSEN JOHANNES GERARDUS ,  DE JAGER PIETER WILLEM HERMAN ,  NIJKERK MICHIEL DAVID

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01J37/00

Abstract: A lithographic projection apparatus includes an alignment sensor having an electron beam source constructed and arranged to provide an electron beam for impinging on an alignment marker on a substrate, and a back-scattered electron detector constructed and arranged to detect electrons back-scattered from the alignment marker. The alignment sensor is independent of the projection system and projection radiation, and is an off-axis alignment sensor.