公开(公告)号：JP2014039069A

公开(公告)日：2014-02-27

申请号：JP2013243543

申请日：2013-11-26

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BRUIJSTENS JEROEN PETER JOHANNES ,  BRULS RICHARD JOSEPH ,  JANSEN HANS ,  SIEBE LANDHEER ,  JORRITSMA LAURENTIUS CATRINUS ,  MEESTER ARNOUT JOHANNES ,  JANSEN BAUKE ,  THOMAS IVO ADAM JOHANNES ,  MIRANDA MARCIO ALEXANDRE CANO ,  VAN DER LEE MAURICE MARTINUS JOHANNES ,  TANASA GHEORGHE ,  NOORDAM LAMBERTUS DOMINICUS

IPC: H01L21/027

CPC classification number: G03F7/70341 ,  G03B27/52

Abstract: PROBLEM TO BE SOLVED: To provide a system to reduce effect of droplets and/or a boundary surface between gas/liquid and a final element on the final element, or to substantially avoid such droplet formation.SOLUTION: A lithographic apparatus comprises: a projection system; and a liquid confinement structure configured to at least partly confine immersion liquid to an immersion space defined by the projection system, the liquid confinement structure, and a substrate and/or a substrate table. In the lithographic apparatus, means is taken for, e.g., reducing effect of droplets on a final element of the projection system or substantially avoiding such droplet formation.

Abstract translation: 要解决的问题：提供一种系统，以减少液体和/或气体/液体与最终元件上的最终元件之间的边界表面的影响，或基本上避免这种液滴形成。解决方案：光刻设备包括：投影 系统; 以及液体限制结构，其被配置为至少部分地将浸没液体限制在由所述投影系统，所述液体限制结构以及衬底和/或衬底台限定的浸没空间中。 在光刻设备中，采取手段来例如减少液滴对投影系统的最终元件的影响或基本上避免这种液滴形成。

公开(公告)号：JP2013016865A

公开(公告)日：2013-01-24

申请号：JP2012227010

申请日：2012-10-12

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BRUIJSTENS JEROEN PETER JOHANNES ,  BRULS RICHARD JOSEPH ,  JANSEN HANS ,  SIEBE LANDHEER ,  JORRITSMA LAURENTIUS CATRINUS ,  MEESTER ARNOUT JOHANNES ,  JANSEN BAUKE ,  THOMAS IVO ADAM JOHANNES ,  MIRANDA MARCIO ALEXANDRE CANO ,  VAN DER LEE MAURICE MARTINUS JOHANNES ,  TANASA GHEORGHE ,  NOORDAM LAMBERTUS DOMINICUS

IPC: H01L21/027

CPC classification number: G03F7/70341 ,  G03B27/52

Abstract: PROBLEM TO BE SOLVED: To provide a system to reduce effect of droplets and/or an interface between gas/liquid and a final element on the final element or to substantially avoid such droplet formation.SOLUTION: A lithographic apparatus comprises a projection system, and a liquid confinement structure configured to at least partly confine immersion liquid to an immersion space defined by the projection system, the liquid confinement structure and a substrate and/or substrate table. In the lithographic apparatus, means is taken for, e.g., reducing effect of droplets lying on a final element of the projection system or substantially avoiding such droplet formation.

Abstract translation: 要解决的问题：提供一种降低液滴和/或气体/液体与最终元件上的最终元件之间的界面的作用的系统，或基本避免这种液滴的形成。 解决方案：光刻设备包括投影系统和液体限制结构，其被配置为至少部分地将浸没液体限制在由投影系统，液体限制结构和衬底和/或衬底台限定的浸没空间中。 在光刻设备中，采取手段来例如降低位于投影系统的最终元件上的液滴的作用或基本上避免这种液滴形成。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010074160A

公开(公告)日：2010-04-02

申请号：JP2009208754

申请日：2009-09-10

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BRUIJSTENS JEROEN PETER JOHANNES ,  BRULS RICHARD JOSEPH ,  JANSEN HANS ,  SIEBE LANDHEER ,  JORRITSMA LAURENTIUS CATRINUS ,  MEESTER ARNOUT JOHANNES ,  JANSEN BAUKE ,  THOMAS IVO ADAM JOHANNES ,  MIRANDA MARCIO ALEXANDRE CANO ,  VAN DER LEE MAURICE MARTINUS JOHANNES ,  TANASA GHEORGHE ,  NOORDAM LAMBERTUS DOMINICUS

IPC: H01L21/027

CPC classification number: G03F7/70341 ,  G03B27/52

Abstract: PROBLEM TO BE SOLVED: To provide a system that reduces an influence of a droplet to a final element and/or an influence of gas and liquid to the interface of the final element, or substantially avoids the formation of such a droplet. SOLUTION: This lithography device includes: a projection system PS; and a liquid confinement structure for at least partially confining an immersion liquid in an immersion space demarcated by the projection system, a liquid confinement structure 12, and also a substrate and/or a substrate table. In the lithography device, for example, the influence of the droplet on the final element of the projection system PS is reduced, or the formation of such a droplet is avoided substantially. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种降低液滴对最终元素的影响和/或气体和液体对最终元件的界面的影响的系统，或基本避免形成这样的液滴。 解决方案：该光刻设备包括：投影系统PS; 以及用于至少部分地将浸没液体限制在由投影系统划分的浸没空间中的液体限制结构，液体限制结构12以及基底和/或基底台。 在光刻装置中，例如，液滴对投影系统PS的最终元件的影响减小，或者基本上避免了形成这样的液滴。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：NL2003395A

公开(公告)日：2010-03-18

申请号：NL2003395

申请日：2009-08-26

Applicant: ASML NETHERLANDS BV

Inventor： BRUIJSTENS JEROEN ,  LEE MAURICE ,  TANASA GHEORGHE ,  NOORDAM LAMBERTUS DOMINICUS ,  BRULS RICHARD ,  JANSEN HANS ,  LANDHEER SIEBE ,  JORRITSMA LAURENTIUS ,  MEESTER ARNOUT ,  JANSEN BAUKE ,  THOMAS IVO ,  MIRANDA MARCIO

IPC: G03F7/20