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    Lithographic apparatus and device manufacturing method
    1.
    发明专利
    Lithographic apparatus and device manufacturing method 有权
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号：JP2010123949A

    公开(公告)日：2010-06-03

    申请号：JP2009257618

    申请日：2009-11-11

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： BIJNEN FRANCISCUS GODEFRIDUS CASPER ,  ROIJERS JOZEF CORNELIS ANTONIUS ,  WARNAAR PATRICK ,  VAN KEMENADE MARC ,  TOLSMA HOITE PIETER THEODOOR

    IPC: H01L21/027 ,  G03F7/20

    CPC classification number: G03F9/7049 ,  G03F9/7003 ,  G03F9/7076 ,  G03F9/7084

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus having excellent alignment reproducibility. SOLUTION: A method for manufacturing the device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective corresponding exposure fields; determining an absolute position of each exposure field from the alignment information for the respective corresponding exposure fields; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有优异的取向再现性的光刻设备。 解决方案：一种制造该器件的方法，包括提供衬底，所述衬底包括多个曝光场，每个曝光场包括一个或多个目标部分和至少一个标记结构，所述标记结构被布置为位置标记 曝光场; 扫描和测量每个曝光场的标记以获得各个相应的曝光场的对准信息; 从各个对应的曝光场的对准信息确定每个曝光场的绝对位置; 通过使用关于相对于彼此的曝光场和至少一个其他曝光场的相对参数的附加信息来确定每个曝光场相对于至少一个其它曝光场的相对位置; 以及将所述绝对位置和所确定的相对位置组合为所述多个曝光场中的每一个的改进的绝对位置。 版权所有（C）2010，JPO＆INPIT

    Method for coarse wafer alignment in lithographic apparatus
    2.
    发明专利
    Method for coarse wafer alignment in lithographic apparatus 审中-公开
    方法在平面设备中进行粗波对齐

    公开(公告)号：JP2009231837A

    公开(公告)日：2009-10-08

    申请号：JP2009064811

    申请日：2009-03-17

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： WARNAAR PATRICK ,  BIJNEN FRANCISCUS GODEFRIDUS C

    IPC: H01L21/027

    CPC classification number: G03F9/7069 ,  G03F9/7076 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To improve coarse alignment accuracy of a substrate.
    SOLUTION: In a method for alignment of a substrate, the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes: providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark; and scanning the spot of the illumination beam along a second scan path across the mark, wherein the second scan path is parallel to the first scan path, and the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提高基板的粗略对准精度。 解决方案：在衬底对准的方法中，衬底包括划线中的标记，并且划线通道沿着纵向方向作为第一方向延伸。 标记在第一方向上具有周期性结构。 该方法包括：提供照射光束，用于沿着与标记的周期结构的方向垂直的方向沿着标记的第一扫描路径扫描标记; 并且沿着所述标记沿着第二扫描路径扫描所述照明光束的光点，其中所述第二扫描路径平行于所述第一扫描路径，并且所述第二扫描路径相对于所述第一扫描路径在对应于所述第一扫描路径的第一移位 周期性结构重复距离的一部分。 版权所有（C）2010，JPO＆INPIT

    Mark structure for coarse wafer alignment and method for manufacturing such mark structure
    3.
    发明专利
    Mark structure for coarse wafer alignment and method for manufacturing such mark structure 有权
    用于粗糙对准的标记结构和制造这种标志结构的方法

    公开(公告)号：JP2009200489A

    公开(公告)日：2009-09-03

    申请号：JP2009030822

    申请日：2009-02-13

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： WARNAAR PATRICK

    IPC: H01L21/027

    CPC classification number: G03F9/7049 ,  G03F9/7076 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To provide a mark structure on a substrate, including at least four lines. SOLUTION: The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：在包括至少四条线的基板上提供标记结构。 解决方案：线在第一方向上彼此平行延伸，并且以垂直于第一方向的第二方向指向的每对线之间的间距布置。 每对所选择的线之间的间距与彼此对选择的线之间的间距不同。 版权所有（C）2009，JPO＆INPIT

    Alignment mark and aligning method of substrate with alignment mark
    4.
    发明专利
    Alignment mark and aligning method of substrate with alignment mark 有权
    具有对准标记的基板的对准标记和对准方法

    公开(公告)号：JP2009188404A

    公开(公告)日：2009-08-20

    申请号：JP2009019370

    申请日：2009-01-30

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： BIJNEN FRANCISCUS GODEFRIDUS C ,  TENNER MANFRED GAWEIN ,  WARNAAR PATRICK ,  VAN KEMENADE MARC

    IPC: H01L21/027

    CPC classification number: G03B27/32 ,  G03F9/7076

    Abstract: PROBLEM TO BE SOLVED: To provide an alignment mark including a periodic structure formed by mark lines. SOLUTION: The alignment mark is formed in a scribe line on a substrate and the scribe line extends in the scribe line direction. The alignment mark has a first region including a first periodic structure formed by a first mark line extending in the first direction having a first angle α(0° COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供包括由标记线形成的周期性结构的对准标记。 解决方案：对准标记形成在基板上的划线中，划线沿划线方向延伸。 对准标记具有包括第一周期性结构的第一区域，所述第一周期性结构由相对于划线方向具有第一角度α（0°<α<90°）的沿第一方向延伸的第一标记线形成，第二区域包括 由相对于划线方向具有第二角度β（-90°≤β<0°）的第二方向延伸的第二标记线形成的第二周期性结构。 版权所有（C）2009，JPO＆INPIT

    Alignment system and alignment marks for use therewith
    5.
    发明专利
    Alignment system and alignment marks for use therewith 有权
    对准系统及其对准标志

    公开(公告)号：JP2009177159A

    公开(公告)日：2009-08-06

    申请号：JP2008326729

    申请日：2008-12-24

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： HULSEBOS EDO MARIA ,  BIJNEN FRANCISCUS GODEFRIDUS C ,  WARNAAR PATRICK

    IPC: H01L21/027 ,  G01B11/00 ,  G03F9/00

    CPC classification number: G03B27/42 ,  G03F9/7003 ,  G03F9/7046 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/7088

    Abstract: PROBLEM TO BE SOLVED: To provide an alignment system employed in lithography equipment. SOLUTION: The lithographic equipment includes an alignment system for aligning a substrate or a reticle. The alignment system includes a radiation source configured to illuminate an alignment mark on the substrate or on the reticle, the alignment mark comprising a maximum length sequence or a multi periodic coarse alignment mark. An alignment signal produced from the alignment mark is detected by a detection system. A processor determines an alignment position of the substrate or the reticle based on the alignment signal. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供在光刻设备中使用的对准系统。 解决方案：光刻设备包括用于对准衬底或掩模版的对准系统。 对准系统包括被配置为照亮衬底或掩模版上的对准标记的辐射源，对准标记包括最大长度序列或多周期性粗略对准标记。 由对准标记产生的对准信号由检测系统检测。 处理器基于对准信号确定基板或掩模版的对准位置。 版权所有（C）2009，JPO＆INPIT

    Single pad overlay measurement
    8.
    发明专利
    Single pad overlay measurement 未知

    公开(公告)号：IL316661A

    公开(公告)日：2024-12-01

    申请号：IL31666124

    申请日：2024-10-29

    Applicant: ASML NETHERLANDS BV ,  HU XIANG ,  VAN DER SCHAAR MAURITS ,  ZWIER OLGER VICTOR ,  WARNAAR PATRICK ,  VAN BUEL HENRICUS WILHELMUS MARIA

    Inventor： HU XIANG ,  VAN DER SCHAAR MAURITS ,  ZWIER OLGER VICTOR ,  WARNAAR PATRICK ,  VAN BUEL HENRICUS WILHELMUS MARIA

    Abstract: A method for generation a structure comprising a first grating at a first pitch in a first layer of a multi- layer stack structure; and a second grating at a second pitch in a second layer of the multi-layer stack structure, wherein, when illuminated by incident radiation, scattered radiation from the measurement structure forms an interference pattern at a detector, wherein the interference pattern comprises at 5 least a first Moire interference component and a second Moire interference component, is described. A method for measuring a parameter of interest in a manufacturing process based on the measurement structure is described, comprising obtaining an interference pattern for the measurement structure, identifying a first Moire interference component and identifying a second Moire interference component in the interference pattern; and determining the measurement of a parameter of interest 0 based on the first Moire interference component and the second Moire interference component.

    METHOD FOR COARSE WAFER ALIGNMENT IN A LITHOGRAPHIC APPARATUS
    9.
    发明专利
    METHOD FOR COARSE WAFER ALIGNMENT IN A LITHOGRAPHIC APPARATUS 未知

    公开(公告)号：SG155856A1

    公开(公告)日：2009-10-29

    申请号：SG2009018151

    申请日：2009-03-10

    Applicant: ASML NETHERLANDS BV

    Inventor： WARNAAR PATRICK ,  BIJNEN FRANCISCUS GODEFRIDUS CASPER

    Abstract: A method for alignment of a substrate, in which the substrate includes a mark in a scribe lane, and the scribe lane extends along a longitudinal direction as a first direction. The mark has a periodic structure in the first direction. The method includes providing an illumination beam for scanning the mark in a direction perpendicular to a direction of the mark's periodic structure along a first scan path across the mark, scanning the spot of the illumination beam along a second scan path across the mark, the second scan path being parallel to the first scan path, wherein the second scan path is shifted relative to the first scan path over a first shift that corresponds to a fraction of the repeating distance of the periodic structure.

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